Effects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial Structures

2013 ◽  
Vol 740-742 ◽  
pp. 494-497 ◽  
Author(s):  
Sathish Chander Dhanabalan ◽  
Marco Negri ◽  
Francesca Rossi ◽  
Giovanni Attolini ◽  
Marco Campanini ◽  
...  

Cubic silicon carbide - silicon dioxide core-shell nanowires have been synthesized in a thermal CVD system from carbon monoxide on silicon substrate. Using a non-ionic surfactant during the coating process of the substrate by the catalyst, the uniformity of the catalytic layer was improved, resulting in a more uniform nanowires growth. It is demonstrated that the core diameter is strongly correlated with the precursor concentration.

2020 ◽  
Vol 65 (10) ◽  
pp. 904
Author(s):  
V. O. Zamorskyi ◽  
Ya. M. Lytvynenko ◽  
A. M. Pogorily ◽  
A. I. Tovstolytkin ◽  
S. O. Solopan ◽  
...  

Magnetic properties of the sets of Fe3O4(core)/CoFe2O4(shell) composite nanoparticles with a core diameter of about 6.3 nm and various shell thicknesses (0, 1.0, and 2.5 nm), as well as the mixtures of Fe3O4 and CoFe2O4 nanoparticles taken in the ratios corresponding to the core/shell material contents in the former case, have been studied. The results of magnetic research showed that the coating of magnetic nanoparticles with a shell gives rise to the appearance of two simultaneous effects: the modification of the core/shell interface parameters and the parameter change in both the nanoparticle’s core and shell themselves. As a result, the core/shell particles acquire new characteristics that are inherent neither to Fe3O4 nor to CoFe2O4. The obtained results open the way to the optimization and adaptation of the parameters of the core/shell spinel-ferrite-based nanoparticles for their application in various technological and biomedical domains.


2020 ◽  
Vol 34 (25) ◽  
pp. 2050214 ◽  
Author(s):  
Chang Liu ◽  
Enling Li ◽  
Tuo Peng ◽  
Kaifei Bai ◽  
Yanpeng Zheng ◽  
...  

In this paper, electronic and optical properties of GaN/InN core/shell nanowires (CSNWs) have been theoretically investigated through the first principles calculations. The binding energy of In and N atoms on surface of six crystal planes along the [Formula: see text]-axis of GaN nanowires are all negative, which indicate that In and N atoms can be effectively deposited on the surface of GaN nanowires and preparing GaN/InN CSNWs is feasible theoretically. Calculation results of electronic properties indicate that the core/shell ratio and diameter of GaN/InN CSNWs have significant effect on the band structure, bandgap can be effectively adjusted when keeping the number of GaN layers unchanged and changing the number of InN layers. Moreover, with the increase in the number of InN layers, the absorption spectrum of GaN/InN CSNW has significant redshift and few weak absorption peaks appear in the visible light region.


2015 ◽  
Vol 33 ◽  
pp. 27-37 ◽  
Author(s):  
Jhin Hong You ◽  
Yi Yin Kuo ◽  
Keh Ying Hsu

This study aims to describe the preparation and characterization of SiO2/TiO2 core-shell particles. In order to prepare the homogenous SiO2/TiO2 inorganic compounds by sol-gel process, SiO2 particles were used as the core, AcAc served as a chelating agent to chelate with TTIP (which was used as the precursor to TiO2), and PEG was added to stabilize the hydrolysis/condensation process. In addition, the ionic surfactant (SDS) and the nonionic surfactant (PVP) dispersed the core-shell particles. In order to improve the crystal structure, a high temperature was used to calcine the core-shell particles. The influence of various reaction parameters on the size, morphology and composition of the particles was also investigated. The properties of the particles were analyzed by electron microscopy, fourier transform infrared analysis, thermogravimetric analysis and powder X-ray diffraction.


Author(s):  
Mihail Ion Lepsa ◽  
Gunjan Nagda ◽  
Pujitha Perla ◽  
Nataliya Demarina ◽  
Detlev Grutzmacher

2011 ◽  
Vol 90-93 ◽  
pp. 1702-1705
Author(s):  
Xi Zhang ◽  
Gang Xiang

We demonstrate the design of the recyclable photocatalyst based on ferromagnetic (FM) ZnO- TiO2 core-shell nanowires (NWs). Since the band gaps and band edge energies of bulk ZnO and anatase TiO2 are equal to each other within about 45mV, TiO2 and ZnO can form an p-p+ heterojunction free of band discontinuities and with a built-in potential. The resulting radial field will increase hole density in the TiO2 layer while reduce hole concentration at the interface between the core and the shell, which in turn will decrease the rate of recombination in the photocatalytic TiO2, and hence increase the efficiency of photocatalyst. On the other hand, the NWs with FM cores can be easily collected and refreshed using solenoid and suitable for the recyclable usage of the NW catalyst


NANO ◽  
2014 ◽  
Vol 09 (04) ◽  
pp. 1450051
Author(s):  
ASHWANI VERMA ◽  
BAHNIMAN GHOSH ◽  
AKSHAY KUMAR SALIMATH

In this paper, we have used semiclassical Monte Carlo method to show the dependence of spin relaxation length in III–V compound semiconductor core–shell nanowires on different parameters such as lateral electric field, temperature and core dimensions. We have reported the simulation results for electric field in the range of 0.5–10 kV/cm, temperature in the range of 77–300 K and core length ranging from 2 nm to 8 nm. The spin relaxation mechanisms used in III–V compound semiconductor core–shell nanowire are D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. Depending upon the choice of materials for core and shell, nanowire forms two types of band structures. We have used InSb – GaSb core–shell nanowire and InSb – GaAs core–shell nanowire and nanowire formed by swapping the core and shell materials to show all the results.


2015 ◽  
Vol 157 ◽  
pp. 149-157 ◽  
Author(s):  
Nur Fatin Farhanah Binti Nazarudin ◽  
Nurul Jannah Binti Mohd Noor ◽  
Saadah Abdul Rahman ◽  
Boon Tong Goh

2020 ◽  
Vol 8 ◽  
Author(s):  
Nian Jiang ◽  
Hannah J. Joyce ◽  
Patrick Parkinson ◽  
Jennifer Wong-Leung ◽  
Hark Hoe Tan ◽  
...  

The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.


2019 ◽  
Vol 9 (17) ◽  
pp. 3528
Author(s):  
Quang Chieu Bui ◽  
Ludovic Largeau ◽  
Martina Morassi ◽  
Nikoletta Jegenyes ◽  
Olivia Mauguin ◽  
...  

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.


2006 ◽  
Vol 958 ◽  
Author(s):  
Y. Yano ◽  
T. Nakajima ◽  
K. Shintani

ABSTRACTThe mechanical properties of Si/Ge core-shell nanowires under a unixial tension are studied using molecular-dynamics simulation. The effects of anisotropy and the fraction of the core atoms on the Young's moduli of the core-shell nanowires are examined. The values of their Young's moduli deviate from those calculated using Vegard's law. Single atom chains are formed at the final stages of elongation of the nanowires.


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