Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases

2013 ◽  
Vol 740-742 ◽  
pp. 589-592
Author(s):  
Tomoaki Hatayama ◽  
Tetsuya Tamura ◽  
Hiroshi Yano ◽  
Takashi Fuyuki

An etch pit shape of off-angled 4H-SiC Si-face formed by different halogen gases such as chlorine trifluoride (ClF3) and a mixed gas (O2+Cl2) of oxygen and chlorine in nitrogen (N2) ambience has been studied. One kind of etch pit with the crooked hexagon was formed at etching temperature under 500oC. The angle of etch pit measured by the cross-sectional atomic force microscope image was about 10o from the [11-20] view. A dislocation type of the etch pit was discussed in comparison with the etch pit shape and an X-ray topography image.

1997 ◽  
Vol 36 (Part 2, No. 10B) ◽  
pp. L1410-L1412
Author(s):  
Ryuji Nishi ◽  
Takayuki Ohta ◽  
Yasuhiro Sugawara ◽  
Seizo Morita ◽  
Takao Okada

2001 ◽  
Vol 703 ◽  
Author(s):  
Akira Ueda ◽  
Richard R. Mu ◽  
Vanessa Saunders ◽  
Thurston Livingston ◽  
Marvin H. Wu ◽  
...  

ABSTRACTGold nanowires were fabricated on the stepped MgO (100) surfaces. The stepped MgO (100) surfaces were produced by polishing (100) surfaces at an inclined angle ∼1° toward a [110] direction. An atomic force microscope image indicates that gold nanowires have grown at the steps on MgO (100) surface with a height of ∼ 2 nm and a width of ∼60 nm.


2016 ◽  
Vol 297 ◽  
pp. 247-258 ◽  
Author(s):  
Timo Hensler ◽  
Markus Firsching ◽  
Juan Sebastian Gomez Bonilla ◽  
Thorsten Wörlein ◽  
Norman Uhlmann ◽  
...  

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


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