Preparation and Electrical Properties of Mn-Co-Ni-O Thin-Film for NTC Thermistors Application

2013 ◽  
Vol 745-746 ◽  
pp. 599-604 ◽  
Author(s):  
Xue Ying Chen ◽  
Lei Wang ◽  
Jin Bao Xu ◽  
Liang Bian ◽  
Bo Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Structure Observation ◽  
Metal Organic

Mn-Co-Ni-O (Mn:Co:Ni=1.74:0.72:0.54, MCN) thin films with single cubic spinel structure were prepared on Si substrates by metal organic solution deposition (MOSD) method at different annealing temperatures. The effects of annealing temperature on the phase component, crystalline microstructure, surface morphology and electrical properties of the MCN thin films were studied. According to the results of x-ray diffraction pattern, the MCN thin film annealed at 650 had spinel structure. Observation with field emission scanning electron microscope (FE-SEM) on the MCN thin films showed that the grain size increased with increasing annealing temperature. The resistance measured at room-temperature was 18.143, 12.457, 2.435 and 3.141MΩ for the MCN thin films annealed at 650, 700, 750 and 800, respectively. The values of thermistor constant (B30/85) and activation energy (Ea) were in the range of 3260-4840K and 0.28-0.42eV, respectively.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

GROWTH OF SPUTTERED-ALUMINUM OXIDE THIN FILMS ON Si (100) AND Si (111) SUBSTRATES WITH Al2O3 BUFFER LAYER

2016 ◽  
Vol 23 (03) ◽  
pp. 1650016
Author(s):  
WEI QIANG LIM ◽  
SUBRAMANI SHANMUGAN ◽  
MUTHARASU DEVARAJAN
Keyword(s):  
Thin Films ◽  
Aluminum Oxide ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Atomic Force ◽  
Section Analysis

Aluminum oxide (Al2O3) thin films with Al2O3 buffer layer were deposited on Si (100) and Si (111) substrates using RF magnetron sputtering of Al2O3 target in Ar atmosphere. The synthesized films were then annealed at the temperature of 400[Formula: see text]C, 600[Formula: see text]C and 800[Formula: see text]C in nitrogen (N2) environment for 6[Formula: see text]h. Structural properties and surface morphology are examined by using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). XRD analysis indicated that different orientation of Al2O3 were formed with different intensities due to increase in the annealing temperature. From FESEM cross-section analysis results, it is observed that the thickness of films were increased as the annealing temperature increased. EDX analysis shows that the concentration of aluminum and oxygen on both the Si substrates increased with the increase in annealing temperature. The surface roughness of the films were found to be decreased first when the annealing temperature is increased to 400[Formula: see text]C, yet the roughness increased when the annealing temperature is further increased to 800[Formula: see text]C.

EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS

2008 ◽  
Vol 15 (06) ◽  
pp. 799-803 ◽  
Author(s):  
XIANGYANG JING ◽  
BAIBIAO HUANG ◽  
SHUSHAN YAO ◽  
QI ZHANG ◽  
ZEYAN WANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Structural And Electrical Properties ◽  
Ce Substitution ◽  
P Type ◽  
Insulating Properties

Ce -doped Bi 2 Ti 2 O 7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce -doped Bi 2 Ti 2 O 7 was more stable than that of Bi 2 Ti 2 O 7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films could be used as storage capacitors in DRAM and MOS.

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