Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
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The aim of this work is to study the effect of Ge introduction during the nucleation step on the SiC growth on 4H-SiC on-axis substrate. After 10 minutes surface pretreatment at 1500°C under C3H8or GeH4, the grown 3C layer at the same temperature can switch from highly twinned (C3H8) to almost twin-free single domain (GeH4). However, for too low and too high GeH4fluxes, the layers display a mixture of polytype. Keeping the best pretreatment but varying the growth temperature degrades the morphology and changes the polytype of the layer. Preliminary electrical results using C-AFM on the 3C-SiC layer are also presented.
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1994 ◽
Vol 137
(1-2)
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pp. 235-239
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1994 ◽
Vol 52
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pp. 736-737
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1998 ◽
Vol 184-185
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pp. 1338
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1996 ◽
Vol 05
(04)
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pp. 621-629
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