Measuring the Absorption Coefficients of TiN Thin Films with Different Thickness

2017 ◽  
Vol 904 ◽  
pp. 120-124
Author(s):  
Hao Yu Chu ◽  
Yu Xiong Li ◽  
Cheng Yan Gu ◽  
Chun Ping Jiang
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cathodoluminescence Spectroscopy ◽  
Tin Thin Films ◽  
Tin Metal ◽  
Different Thickness

In this work, different thick TiN thin films were prepared by pulsed laser deposition on GaN substrates at 650°C. The crystal structure and morphology are characterized by X-ray Diffraction and Atomic Force Microscopy. We characterized the sample by cathodoluminescence spectroscopy at room temperature and measured the thickness of the film by a cross-sectional scanning electron microscopy. Combining the attenuation of light intensity and the thickness, the absorption coefficient of the samples can be estimated by the Beer-Lambert law. The absorption coefficients of TiN metal thin film obtained here are closed with each other. The optical properties may not change with increasing thickness.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

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