Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition

2018 ◽  
Vol 924 ◽  
pp. 100-103 ◽  
Author(s):  
Örjan Danielsson
Keyword(s):  
Vapor Deposition ◽  
Systematic Approach ◽  
Scale Up ◽  
Chemical Vapor ◽  
Active Species ◽  
Complex Nature ◽  
Modeling Tools ◽  
Reactor Configuration ◽  
Chemical Models ◽  
Experimental Findings

Understanding the chemistry in CVD of SiC is important to be able to control, improve and scale up the process to become industrially competitive. A thorough understanding have so far been difficult to achieve due to the complex nature of the process. Through modeling tools, and a systematic approach when constructing the chemical models, new insights to the SiC CVD chemistry can be obtained. Using a general model that is independent on the choice of precursors and reactor configuration, and by coupling modeling results to experimental findings, we here show that SiCl2 and SiH2 previously suggested as the main silicon bearing growth species in the chlorinated and standard chemistries, respectively, does not contribute significantly to the SiC growth, and that the main active species are C2H2, CH3, Si, and SiCl.

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

scholarly journals Special Issue: Advances in Chemical Vapor Deposition

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4167
Author(s):  
Dimitra Vernardou
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Daily Life ◽  
Chemical Vapor ◽  
Polymer Coatings ◽  
Water Filtration ◽  
Special Issue ◽  
Experimental Findings ◽  
Scalable Production

Pursuing a scalable production methodology for materials and advancing it from the laboratory to industry is beneficial to novel daily-life applications. From this perspective, chemical vapor deposition (CVD) offers a compromise between efficiency, controllability, tunability and excellent run-to-run repeatability in the coverage of monolayer on substrates. Hence, CVD meets all the requirements for industrialization in basically everything including polymer coatings, metals, water-filtration systems, solar cells and so on. The Special Issue “Advances in Chemical Vapor Deposition” has been dedicated to giving an overview of the latest experimental findings and identifying the growth parameters and characteristics of perovskites, TiO2, Al2O3, VO2 and V2O5 with desired qualities for potentially useful devices.

Scale-up of oCVD: large-area conductive polymer thin films for next-generation electronics

2015 ◽  
Vol 2 (2) ◽  
pp. 221-227 ◽  
Author(s):  
Peter Kovacik ◽  
Gabriella del Hierro ◽  
William Livernois ◽  
Karen K. Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Polymer Films ◽  
Vapor Deposition ◽  
Low Cost ◽  
Scale Up ◽  
Conductive Polymer ◽  
Chemical Vapor ◽  
Next Generation ◽  
Large Area

We demonstrate large-area conductive polymer films using oxidative chemical vapor deposition and apply them to low-cost and durable conductive textiles.

scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Epitaxy Of GaAs on Si: MBE and OMCVD

1987 ◽  
Vol 91 ◽  
Author(s):  
Jhang W. Lee ◽  
Jack P. Salerno ◽  
Ron P. Gale ◽  
John C.C. Fan
Keyword(s):  
Residual Stress ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Scale Up ◽  
Chemical Vapor ◽  
Growth Technique ◽  
Gaas On Si ◽  
Si Epitaxy ◽  
Si Wafer

ABSTRACTGrowth technique dependent factors are compared for molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD) that are related to the GaAs on Si epitaxy. The comparison, both for growth processes and as-grown material characteristics, indicates that material qualities of these layers provided by the two growth techniques are comparable in many aspects, but differ in morphological texture, residual stress, and occasionally Schottky barrier height. These issues are discussed further with our recent OMCVD results in order to ensure the OMCVD advantages for GaAs on Si wafer engineering, which are referred as an easy scale-up and a large throughput.

Deposition of Thin Insulating films by Plasma Enhanced CVD

1985 ◽  
Vol 54 ◽  
Author(s):  
G. Lucovsky ◽  
P. D. Richard ◽  
D. V. Tsu ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Active Species ◽  
Plasma Region ◽  
Plasma Enhanced Cvd ◽  
Insulating Films ◽  
Precursor Molecules ◽  
Substrate Temperatures ◽  
Low Temperature Process

ABSTRACTWe discuss a new low temperature process for the deposition of electronic quality thin films of silicon oxide and nitride. In contrast to conventional plasma enhanced chemical vapor deposition [PECVD], this process involves the remote excitation of one of the gas reactants followed by the extraction of the active species out of the plasma region where they react to generate precursor molecules. The precursors undergo a CVD reaction at a heated substrate to form the desired thin film. The process is called remote PECVD [RPECVD]. Insulators produced in this way show significant reductions in the incorporation of impurity groups such as SiH and SiOH relative to films grown by the PECVD process at the same substrate temperatures.

Plasma-enhanced chemical vapor deposition of carbon nanotubes using alcohol vapor

2007 ◽  
Vol 1057 ◽  
Author(s):  
Atsushi Okita ◽  
Yoshiyuki Suda ◽  
Masayuki Maekawa ◽  
Junichi Takayama ◽  
Akinori Oda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Active Species ◽  
Process Conditions ◽  
Experimental Conditions ◽  
Plasma Properties ◽  
Plasma Species

ABSTRACTWe have successfully grown carbon nanotubes (CNTs) by alcohol plasma-enhanced chemical vapor deposition (PECVD). When 0.01 wt% ferrocene was added to alcohol, vertically-aligned CNTs could be grown using RF (= 13.56 MHz) plasma at 650°C. In contrast, no CNTs were obtained by pure alcohol PECVD. To understand the plasma properties for CNT growth, especially plasma species containing a gas phase of alcohol plasma, we analyzed the plasma using optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS). From the OES measurement, one could identify the emission peaks from the excitation states of CHO, CO, C2, O2, H, CH+, and H2O+, while the QMS measurement also showed the existence of CO, H2O, and CxHy (x≥2, y≥2). It is considered that such plasma species affect CNT growth by changing the oxidation state of the catalyst or by adjusting the amount of precursor species in the plasma. Comparing this PECVD experiment with thermal alcohol CVD (without plasma), only PECVD can be used to grow CNTs under the reported experimental conditions. It is considered that thermal alcohol CVD requires more energy to grow CNTs because 650°C is a little lower than the temperature required for CNT growth. These results indicate that in alcohol plasma, the active species produced by decomposition and recombination reactions have a possibility to promote/suppress CNT growth depending on the process conditions.

Scale-up approach for industrial plasma enhanced chemical vapor deposition processes and SiOx thin film technology

2013 ◽  
Vol 547 ◽  
pp. 193-197
Author(s):  
Su B. Jin ◽  
Joon S. Lee ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
Jeon G. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Scale Up ◽  
Chemical Vapor ◽  
Thin Film Technology ◽  
Deposition Processes
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