An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge

2019 ◽  
Vol 954 ◽  
pp. 151-156
Author(s):  
Kai Tian ◽  
Jing Hua Xia ◽  
Jin Wei Qi ◽  
Shen Hui Ma ◽  
Fei Yang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Figure Of Merit ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Type Region ◽  
Conventional Structure ◽  
Gate Charge

In this paper, an improved 4H-SiC trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with low on-resistance and reduced gate charge is proposed. The added n-type region in the improved structure reduces on-resistance of the device significantly while maintaining same breakdown voltage. The gate of the improved structure is designed as a p-n junction to reduce the gate-charge. The specific on-resistances of the improved 4H-SiC UMOSFETs is 1.87 mΩ.cm2 at VGS=18 V and VDS=10 V, compared with 4.48 mΩ.cm2 for the conventional p+ shielding UMOSFETs structure with same breakdown voltage. The on-resistance and figure of merit (FOM = VBR2/Ron) improve by 58.3% and 103.6%, respectively. Compared with the conventional structure, the results show that gate-drain charge of the improved structure can be improved by 23.8%.

An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions

2019 ◽  
Vol 954 ◽  
pp. 157-162
Author(s):  
Kai Tian ◽  
Jing Hua Xia ◽  
Jin Wei Qi ◽  
Shen Hui Ma ◽  
Fei Yang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Figure Of Merit ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

In this paper, an optimized p+ shielding 4H-SiC trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with floating regions is proposed. The p+ shielding region is moved down to gain a low device on-resistance and the floating regions are designed to improve the breakdown voltage in the proposed structure. Specific on-resistances of the proposed 4H-SiC UMOSFETs is 2.62 mΩ.cm2 at VGS=18 V and VDS=10 V, compared with 4.77 mΩ.cm2 for the conventional p+ shielding UMOSFETs structure with same breakdown voltage. The on-resistance and figure of merit (FOM = VBR2/Ron) improve by 45.1% and 94.2%, respectively.

A Study on Optimization of Planar Gate Type Metal-Oxide-Semiconductor Field-Effect-Transistors Multi Epitaxial Process in Super-Junction Structure

2021 ◽  
Vol 16 (5) ◽  
pp. 738-743
Author(s):  
Chang Hyeon Jo ◽  
Dea Hee Kim ◽  
Hyeong Seong Jo ◽  
O Yong Kwon ◽  
Ey Goo Kang
Keyword(s):  
Metal Oxide ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Reliability ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
High Breakdown Voltage ◽  
Junction Structure

Power metal-oxide-semiconductor field-effect-transistors (MOSFET) is a high voltage control device that requires high reliability and efficiency and is used to improve efficiency in areas such as renewable energy generators, electric vehicles, power supply unit, converters and motor control. Electrical characteristics of the MOSFET include a Threshold voltage which is a voltage for operating the device, an On-resistance which is a device resistance in an on-state, and a breakdown voltage which means a device withstand voltage. A Super-Junction structure is proposed to design the device with a high breakdown voltage and a low on-resistance. A multi-epitaxial Super-Junction MOSFET forms a Pillar layers by injecting continuously P-type impurity at edge on stacked N-Pillar layer. By forming the Pillar region which is higher doping concentration than N-drift, the on resistance can be reduced. In the forward blocking mode, the depletion layer of the Pillar region is extended to both vertical and horizontal sides, for a high breakdown voltage can be obtained. By using a T-CAD tool which is a process simulator, electrical characteristics of 1,200 V class super-junction MOSFET are analyzed along process variables (pillar lateral length, pillar concentration). When the breakdown voltage of the super junction MOSFET and the Planar MOSFET are equal, On-resistance (based on 10 A) has a gain of approximately 20% by a difference of 0.189 ohm×cm. It is believed that this can contribute to the development of super junction MOSFET with improved reliability and electrical characteristics.

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 943-946
Author(s):  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Field ◽  
Reduced Surface

Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.

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