Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon

This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

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Photoluminescence of Different Phase Si Nanoclusters in Amorphous Hydrogenated Silicon

MRS Proceedings ◽

10.1557/proc-1066-a06-05 ◽

2008 ◽

Vol 1066 ◽

Author(s):

Tetyana V. Torchynska

Keyword(s):

Light Emission ◽

X Ray Diffraction ◽

Silicon Matrix ◽

Hydrogenated Silicon ◽

X Ray ◽

Glass Substrates ◽

Cvd Method ◽

Amorphous Hydrogenated Silicon ◽

Amorphous Si ◽

Si Nanocrystallites

ABSTRACTThis paper presents the results of XRD and PL spectrum studies for Si nano-clusters embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1735-1885°C. It was shown that variation of filament temperatures allows producing the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between the intensity of some photoluminescence bands and the concentrations of Si nanocrystallites and amorphous Si nanoclusters has been shown. The nature of light emission is discussed.

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Electrodeposition of Cu2O Particles by Using Electrolyte Solution Containing Glucopone as Surfactant

JURNAL ILMU FISIKA | UNIVERSITAS ANDALAS ◽

10.25077/jif.1.2.18-20.2009 ◽

2009 ◽

Vol 1 (2) ◽

pp. 18-20

Author(s):

Dahyunir Dahlan

Keyword(s):

Indium Tin Oxide ◽

Pulse Current ◽

Platinum Electrode ◽

Saturated Calomel Electrode ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Continuous Current ◽

Oxide Particles ◽

Cupric Sulphate

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced

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X- ray diffraction and dielectric properties of PbSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.115 ◽

2019 ◽

Vol 15 (34) ◽

pp. 1-14

Author(s):

Bushra A. Hasan

Keyword(s):

Thin Films ◽

Thermal Activation ◽

Thermal Evaporation ◽

Thermal Activation Energy ◽

Dielectric Constants ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.7619 ◽

2011 ◽

Vol 383-390 ◽

pp. 7619-7623

Author(s):

Z Z Lu ◽

F. Yu ◽

L. Yu ◽

L. H. Cheng ◽

P. Han

Keyword(s):

Energy Dispersive Spectroscopy ◽

Chemical Vapor ◽

Energy Dispersive ◽

Composition Analysis ◽

X Ray Diffraction ◽

Si Substrate ◽

Composition Distribution ◽

X Ray ◽

Cvd Method ◽

Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

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Size dependent behavior of Fe3O4crystals during electrochemical (de)lithiation: an in situ X-ray diffraction, ex situ X-ray absorption spectroscopy, transmission electron microscopy and theoretical investigation

Physical Chemistry Chemical Physics ◽

10.1039/c7cp03312e ◽

2017 ◽

Vol 19 (31) ◽

pp. 20867-20880 ◽

Cited By ~ 27

Author(s):

David C. Bock ◽

Christopher J. Pelliccione ◽

Wei Zhang ◽

Janis Timoshenko ◽

K. W. Knehr ◽

...

Keyword(s):

Electron Microscopy ◽

Structural Changes ◽

Ex Situ ◽

X Ray Diffraction ◽

X Ray ◽

Size Dependent ◽

Transmission Electron ◽

Dependent Behavior ◽

X Ray Absorption

Crystal and atomic structural changes of Fe3O4upon electrochemical (de)lithiation were determined.

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Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

MRS Proceedings ◽

10.1557/opl.2011.1306 ◽

2011 ◽

Vol 1328 ◽

Author(s):

KyoungMoo Lee ◽

Yoshio Abe ◽

Midori Kawamura ◽

Hidenobu Itoh

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Indium Tin Oxide ◽

Large Change ◽

Amorphous Structure ◽

Cobalt Hydroxide ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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Stress in Hydrogenated Microcrystalline Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-557-537 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 3

Author(s):

D. Peiró ◽

C. Voz ◽

J. Bertomeu ◽

J. Andreu ◽

E. Martínez ◽

...

Keyword(s):

Mechanical Properties ◽

Vapor Deposition ◽

Volume Fraction ◽

Chemical Vapor ◽

Hot Wire ◽

X Ray Diffraction ◽

Microcrystalline Silicon ◽

X Ray ◽

Silicon Thin Films ◽

Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

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Effects of Surface Energy on the Microstructures of Thin Sb Films

MRS Proceedings ◽

10.1557/proc-202-131 ◽

1990 ◽

Vol 202 ◽

Author(s):

L. H. Chou ◽

M. C. Kuo

Keyword(s):

Electron Microscopy ◽

Surface Energy ◽

Grain Growth ◽

Grain Orientation ◽

Thermal Evaporation ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Transmission Electron ◽

Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

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