Vacancies and Self-Interstitials Dynamics in Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 139-144 ◽  
Author(s):  
O. Caha ◽  
J. Kuběna ◽  
A. Kuběna ◽  
M. Meduňa
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Theoretical Models ◽  
Silicon Wafers ◽  
Cooling Rates ◽  
Silicon Technology ◽  
Oxygen Precipitation ◽  
Initial States ◽  
Kinetics Of ◽  
Oxygen Dynamics

Successful theoretical models of vacancies, self-interstitials and oxygen dynamics during an ingot growth lead us to apply these models results also to silicon wafers. The modern silicon technology uses successfully the RTA (rapid thermal annealing) in order to form MDZ (magic denude zone) in individual CZ Si wafers. The effect of RTA is based on the utilization of vacancies for control of oxygen precipitation. The question about the theory of kinetics of vacancies and interstitials, which describes its behavior within RTA, is still opened up to now. This work deals mainly with the nucleation of vacancies during RTA concerning various cooling rates and initial states.

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3055-3062 ◽  
Author(s):  
Masanori Akatsuka ◽  
Masahiko Okui ◽  
Nobuyuki Morimoto ◽  
Koji Sueoka
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Redistribution of Boron and Fluorine Atoms in BF2Implanted Silicon Wafers during Rapid Thermal Annealing

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1123-1128 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Tsuyoshi Setokubo ◽  
Kazuo Aizawa ◽  
Toshinori Ohsawa
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers

Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

2013 ◽  
Vol 114 (4) ◽  
pp. 043520 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster ◽  
TaeHyeong Kim ◽  
SoonSung Park ◽  
T. Torack
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Depth Profiles ◽  
Oxygen Precipitates

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 279-282
Author(s):  
V.G. Litovchenko ◽  
I.P. Lisovskyy ◽  
M. Voitovych ◽  
Andrey V. Sarikov ◽  
S.O. Zlobin ◽  
...  
Keyword(s):  
Experimental Data ◽  
Infrared Spectroscopy ◽  
Kinetic Model ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Structure ◽  
Oxide Phase ◽  
Interstitial Oxygen ◽  
Single Crystalline ◽  
Oxygen Precipitation

In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

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