Dose Characteristics of Multilayer Chitosan-Metal-Dielectric Nanostructures for Electronic Nanolithography

2015 ◽  
Vol 245 ◽  
pp. 195-199 ◽  
Author(s):  
Sergey Voznesenskiy ◽  
Aleksandr Nepomnyaschiy
Keyword(s):  
Intermediate Layer ◽  
Glass Substrates ◽  
Submicron Structures ◽  
Electron Lithography ◽  
Selection Of

This paper presents the results of the study of chitosan-metal nanofilms for the formation of submicron structures on glass substrates by electron lithography. The dependence of their basic lithographic characteristics from the selection of the metal for intermediate layer is obtained.

scholarly journals Influence of the substrate on the overall sensor impedance of planar H<sub>2</sub> sensors involving TiO<sub>2</sub>–SnO<sub>2</sub> interfaces

2015 ◽  
Vol 4 (1) ◽  
pp. 85-90 ◽  
Author(s):  
L. Ebersberger ◽  
G. Fischerauer
Keyword(s):  
Metal Oxide ◽  
Sensor Element ◽  
Glass Substrates ◽  
Sensor Performance ◽  
Metal Oxide Sensors ◽  
Measurement Results ◽  
Quartz Substrates ◽  
Substrate Influence ◽  
Selection Of ◽  
Multilayer Metal

Abstract. To date, very little has been written about the influence of the substrate layer on the overall sensor impedance of single- and multilayer planar sensors (e.g., metal-oxide sensors). However, the substrate is an elementary part of the sensor element. Through the selection of a substrate, the sensor performance can be manipulated. The current contribution reports on the substrate influence in multilayer metal-oxide chemical sensors. Measurements of the impedance are used to discuss the sensor performance with quartz substrates, (laboratory) glass substrates and substrates covered by silicon-dioxide insulating layers. Numerical experiments based on previous measurement results show that inexpensive glass substrates contribute up to 97% to the overall sensor responses. With an isolating layer of 200 nm SiO2, the glass substrate contribution is reduced to about 25%.

Growth of Cu-Rich/Poor CuInS2 thin films by the sequential modulated flux deposition technique

2009 ◽  
Vol 1165 ◽  
Author(s):  
Alberto Bollero ◽  
Maarja Grossberg ◽  
Taavi Raadik ◽  
Juan Francisco Trigo ◽  
José Herrero ◽  
...  
Keyword(s):  
Soda Lime ◽  
Band Gap Energy ◽  
Soda Lime Glass ◽  
Proper Selection ◽  
Glass Substrates ◽  
Sequential Modulation ◽  
Deposition Parameters ◽  
Cuins2 Thin Films ◽  
Direct Band ◽  
Selection Of

AbstractCuInS2 has emerged during recent years as a good candidate to substitute CuInSe2 as polycrystalline absorber in thin film solar cells, mainly due to its direct band gap energy of 1.5 eV. In this study, absorber layers of both Cu-rich and Cu-poor types have been grown on soda-lime glass substrates by proper selection of the deposition parameters. The morphology and the optical properties of the resulting CuInS2 films were studied in dependence of the deposition order of the elemental constituents: alternate evaporation of the precursors, simultaneous deposition of the three constituents and sequential modulation of the evaporation fluxes.

scholarly journals Study of Structural and Optical Properties of ZnS:Ni Thin Films Prepared by Dip Coating Method

2013 ◽  
Vol 12 (1) ◽  
pp. 17-29
Author(s):  
C Gunasekaran ◽  
V Senthilkumar ◽  
P Kokila ◽  
S Uma ◽  
S Banumathi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Dip Coating ◽  
Zinc Nitrate ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Acidic Conditions ◽  
Dip Coating Method ◽  
Selection Of

Adherent and uniform films of ZnS and ZnS:Ni were deposited reproducibly by Dip coating method onto a glass substrate, under acidic conditions from solutions containing Zinc Nitrate, Nickel Nitrate, Ammonium Nitrate, Sodium citrate, thiourea and distilled water. The growth of ZnS thin films on glass substrates have been thoroughly investigated by SEM, EDAX and X- ray diffraction techniques. The grain sizes (D) of crystallites were estimated using the Scherrer’s formula. Depending on selection of precursors and presence of dopant, ZnS and ZnS films can be of Sphalenite or wurtzite structure. The effect of the dopant on the crystallinity and surface morphology of ZnS thin films have been studied. The surface morphology, which has been evaluated by scanning electron microscope (SEM), shows a relatively flat and uniform surface.

Novel Synthesis of Metal Nanowhiskers: High-Temperature Glancing Angle Deposition

2007 ◽  
Vol 1058 ◽  
Author(s):  
Motofumi Suzuki ◽  
Kenji Hamachi ◽  
Koji Nagai ◽  
Ryo Kita ◽  
Kaoru Nakajima ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Selective Growth ◽  
Universal Method ◽  
Glass Substrates ◽  
Vacuum Microelectronics ◽  
Novel Synthesis ◽  
Glancing Angle ◽  
Angle Deposition ◽  
Selection Of

ABSTRACTWe demonstrate high temperature glancing deposition (HT-GLAD) of metals on the heated substrate. It has been found that Al, Ag, Au, Fe nano-whiskers grow on the substrate of Si, SiO2, and glass substrates. The robustness in the selection of materials suggests that the HT-GLAD is a universal method to grow nano-whiskers of various metals. We also demonstrate the selective growth of the nano-whiskers on the substrate with micro-trench patterns. The metal nano-whiskers are useful for the nano electromechanical devices and vacuum microelectronics.

Influence of Silicon Intermediate Layer on Adhesion of Carbon Films

1997 ◽  
Vol 11 (02n03) ◽  
pp. 87-92 ◽  
Author(s):  
Hou Qingrun ◽  
J. Gao
Keyword(s):  
Electron Beam ◽  
Pulsed Laser Deposition ◽  
Intermediate Layer ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Electron Beam Evaporation ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Intermediate Layers ◽  
Deposition Conditions

The influence of silicon intermediate layer on adhesion of carbon films has been investigated by using the micro-scratch method. The carbon films with and without Si intermediate layer were grown on glass substrates by both electron beam evaporation and pulsed laser deposition. To improve the adhesion of carbon, a silicon intermediate layer was deposited by electron beam evaporation with thickness ranged from 6 to 42 nm. Variations in adhesion were found for different coating techniques and deposition conditions, especially the thickness of silicon intermediate layers. The cause of such variations was discussed.

Fabrication of a novel low-cost triple layer system (TaZO/Ag/TaZO) with an enhanced quality factor for transparent electrode applications

RSC Advances ◽  
2016 ◽  
Vol 6 (68) ◽  
pp. 63314-63324 ◽  
Author(s):  
K. Ravichandran ◽  
K. Subha ◽  
A. Manivasaham ◽  
M. Sridharan ◽  
T. Arun ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Quality Factor ◽  
Intermediate Layer ◽  
Low Cost ◽  
Transparent Electrode ◽  
Metallic Silver ◽  
Layer System ◽  
Glass Substrates ◽  
Triple Layer

A triple layer system (TaZO/Ag/TaZO), consisting of tantalum doped zinc oxide (TaZO) as the top and bottom layers and metallic silver (Ag) as the intermediate layer, was deposited onto glass substrates.

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