Process Parameter Control for BEOL TiN Hard Mask Etch-Back
Keyword(s):
In this paper we demonstrate an effective process control mechanism to significantly improve on the process performance of a BEOL post-etch cleaning process with an integrated partial or complete removal of the TiN HM (hard mask) layer by so called formulated chemistries on a single wafer processing tool. The novel process control mechanism enables a 50% reduction in chemical consumption while achieving an at least equivalent TiN etch uniformity.
2013 ◽
Vol 315
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pp. 176-180
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2011 ◽
Vol 383-390
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pp. 2827-2831
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2021 ◽
Vol 24
(1)
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pp. 564
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2019 ◽
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2007 ◽
Vol 22
(4)
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pp. 411-414
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2019 ◽
Vol 10
(2)
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pp. 65-81
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