Next generation thin film polymers for WLP applications and their mechanical and electrical characterization

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000656-000678
Author(s):  
Markus Woehrmann ◽  
M. Toepper ◽  
H. Walter ◽  
K.-D. Lang

Thin film polymers, like PI, PBO and BCB are used in every wafer level packaging device. The improvement of the reliability of wafer-level packages and chip I/Os consider the choice of the polymer, which is used as dielectric on the chip, as a minor point. Because the production lines are normally fixed on one polymer and the high investments to evaluate the processing of an alternative polymer formulation in combination with costly reliability test seems to be not attractive till today. But the increased demands of advanced WLP and 3-D-Integration, which includes thin chips, chips stacking and higher routing densities, leads to reaching the limits of the common used material system combinations. The demand of better polymer films becomes evident by the fact that dozens of “next generation polymers” have entered the marked in the last years, which are tailored to get higher mechanical toughness and electrical performance aside of a nearly unchanged resolution capacity. The challenge for new polymer formulation is the evaluation of the processing and the generation of a reliable material property data base, which set the basics for any benchmarking to the already used polymer materials. The processing evaluation is done typically by the material supplier or the fab himself, where no special equipment is needed. The material property generation is a quite more complex topic because you need special equipment and partly the material need to be free standing without any substrate. This is also a handling issue, if we talk about thin films in the range of 5 to 20μm. This paper presents the reliable thin film polymer properties characterization of mechanical and electrical values. The measurements of the mechanical properties include the estimation of parameters like young's modulus, tensile strength, elongation at break, coefficient of thermal expansion, stress and time-temperature related effects. The evident topic of warpage related impacts by “new generation polymers” will be presented and discussed. Measurement structures on wafer-level are developed for the estimation of the electrical parameters, which allows a high accuracy and a device relevant value estimation. Parameters like break down voltage, leakage current, dielectric constant, loss factor are measured related to frequencies by MIM and resonator structures. We demonstrate with analyzing of the time-dependent dielectric breakdown (TDDB) of thin film polymers that there is an exponential linkage between field strength and the time till the breakthrough occurs. The mechanical and electrical properties were also investigated related to aging effects, when the application is running on elevated temperature. We examine a degradation of the mechanical and electrical performance, which should be taken into account for the mechanical system reliability and also for impedance controlled HF-application. This paper present advanced material characterization of thin film polymers which gives a guideline for the decision of the polymer related to the demands of the application.

Author(s):  
Yonggang Jin ◽  
Jerome Teysseyre ◽  
Xavier Baraton ◽  
S. W. Yoon ◽  
Yaojian Lin ◽  
...  
Keyword(s):  

2015 ◽  
Vol 17 (1) ◽  
pp. 112-116 ◽  
Author(s):  
Hsin-Sheng Duan ◽  
Huanping Zhou ◽  
Qi Chen ◽  
Pengyu Sun ◽  
Song Luo ◽  
...  

Thin film photovoltaic cells based on hybrid halide perovskite absorbers have emerged as promising candidates for next generation photovoltaics.


2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001364-001377
Author(s):  
Roupen Keusseyan ◽  
Tim Mobley

Borosilicate glass based wafer technologies are being developed for next generation high speed electronic, telecom and biotech systems; that integrate heterogeneous devices in a single package for improved electrical performance. The primary key to success is to have a well understood via through the glass that can be used as a core to build wafer level packages from. The present paper will discuss developments in through hole formation technology and via metallization materials and processes. Through hole formation in borosilicate glass with corresponding wall morphology and chemistry play important roles in building robust vias through the glass. These hole characteristics and their dependence on performance, defects at the wafer level and key developments that have been achieved to overcome them will be discussed in detail.


2011 ◽  
Vol 2011 (1) ◽  
pp. 000241-000248
Author(s):  
S. Klengel (Bennemann) ◽  
M. Krause ◽  
L. Berthold ◽  
M. Petzold ◽  
J. Förster ◽  
...  

The embedded Wafer Level Ball Grid Array (eWLB) technology is a new packaging solution that allows a minimum package size for any number of interconnects at a given pitch and the possibility of further system integration in x-, y- and z-direction. The eWLB is a fan-out wafer level package solution realized by a thin film redistribution layer above the semiconductor chip and using standard thin-film processes. The eWLB technology is driven by smaller form factor and better electrical performance with respect to high frequency applications. For optimum electrical performance, it is important to measure and control the contact resistance at interfaces caused by intermediate layers of the electrical re-routing. This paper presents a case study for high resolution analyzes at the eWLB metallization system Al/TiW/Cu with different intermetallic resistance behavior. First, we investigate different eWLB metallization systems after different process step variations. We observe chemically high resistance intermediate layers using Time-of-Flight Mass Spectrometry (ToF-SIMS). These results show that the intermediate layer consists of carbon, oxygen, fluorine, chlorine and sulfur. Second, we applied Focused Ion Beam (FIB) preparation and Transmission Electron Microscopy (TEM) as well as High Resolution Transmission Electron Microscopy (HRTEM) experiments to investigate the metallization interface Al/TiW/Cu. We resolve a porous 2–10 nm thin layer. We show that control of different humidity concentration out of the mold compound and different pre-clean etch rates at warped wafer parts are crucial for optimum contact resistance. The results demonstrate that high resolution analyzes and combinations of different analytical methods (e.g. HRTEM and ToF-SIMS) are very important for optimum process developments in modern package technology.


2018 ◽  
Vol 13 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Yanjun Fang ◽  
Ardalan Armin ◽  
Paul Meredith ◽  
Jinsong Huang
Keyword(s):  

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