On-Chip Diffusion Bonding creates Stable Interconnections Usable at Temperatures over 300°C

2019 ◽  
Vol 2019 (1) ◽  
pp. 000530-000534
Author(s):  
Jessica Richter ◽  
Anna Steenmann ◽  
Benjamin Schellscheidt ◽  
Thomas Licht
Keyword(s):  
Melting Point ◽  
Mechanical Stability ◽  
Transient Liquid Phase ◽  
Isothermal Solidification ◽  
Process Temperature ◽  
High Melting ◽  
Silicon Devices ◽  
Thin Region ◽  
On Chip ◽  
Almost All

Abstract In this paper, we present a conceptual design of an on-chip solder stack to connect silicon devices faster and more reliable. Almost all electronic devices rely on solder layers to provide electrical, mechanical, and thermal connections between components. We improve the solder connection with industry-standard solder parameters of 300°C and some minutes of soldering time. An ideal solder connection is composed of intermetallic phases (IMPs) at the interfaces between device and solder, and substrate and solder. Typically, a thin region of Sn-based solder remains between the two IMP layers at the interfaces. IMPs of copper (Cu) and tin (Sn) are Cu6Sn5 and Cu3Sn. The formation of IMPs is decisive for a good mechanical connection because of their high melting point and mechanical stability. To achieve these requirements, we implement the solder stack as a transient liquid phase bonding (TLPB) system. To realize durable interconnections, we use the diffusion of a high-melting first component in a second component, which is liquid at solder process temperature. Ongoing diffusion leads to the formation of IMPs with a melting point above process temperature, resulting in a solidification of the connection at constant temperature. By this isothermal solidification, the solder connection becomes more durable against mechanical and thermal load and is usable at temperatures exceeding 300°C.

Petroleum Residues in the Sargasso Sea and on Bermuda Beaches

1973 ◽  
Vol 1973 (1) ◽  
pp. 521-529 ◽  
Author(s):  
Byron F. Morris ◽  
James N. Butler
Keyword(s):  
Gas Chromatography ◽  
Melting Point ◽  
Standing Stock ◽  
Chemical Characteristics ◽  
Sargasso Sea ◽  
High Melting ◽  
High Melting Point ◽  
Petroleum Residues ◽  
Crude Oil Sludge ◽  
Almost All

ABSTRACT Petroleum residues (“tar lumps”) are found throughout the Atlantic Ocean. An estimate of the current standing stock of tar in the Northwest Atlantic is 86,000 metric tons, of which 66,000 tons are found in the Sargasso Sea. Although there are wide seasonal variations, the amount observed near Bermuda has not increased significantly from 1971 to 1972. Beach deposits also undergo wide variations (4 g/m to 1700 g/m), and seem to act, on the average, as collectors of tar from a strip of water about 20 km wide. Chemical characteristics of tar lumps (analyzed by gas chromatography) vary widely, but almost all have distinctive paraffinic wax components in the C30 to C40 range, implying that their origin is in crude oil sludge from tanker washings. The standing stock is probably between 20 to 50 percent of the total annual influx of petroleum from this source. Degradation of tar lumps at sea, after rapid losses by evaporation and dissolution, takes times of the order of years, probably because of their substantial content of high-melting point waxes and asphaltenes.

A Review on Recent Advances in Transient Liquid Phase (TLP) Bonding for Thermoelectric Power Module

2018 ◽  
Vol 53 (2) ◽  
pp. 147-160 ◽  
Author(s):  
D. H. Jung ◽  
A. Sharma ◽  
M. Mayer ◽  
J. P. Jung
Keyword(s):  
Melting Point ◽  
Liquid Phase ◽  
Bonding Temperature ◽  
Transient Liquid Phase ◽  
Isothermal Solidification ◽  
Power Module ◽  
Recent Advances ◽  
Tlp Bonding ◽  
Bonding Technology ◽  
Increasing Demand

Abstract In this study, the authors have reviewed recent advances on the transient liquid phase (TLP) bonding technology for various applications especially power module packaging in view of the recent increasing demand for the production of vehicles, smartphones, semiconductor devices etc. TLP bonding is one of the potential technologies from clean technology that can replace the Pb-base solder technology without causing any serious environmental issues. It is based on the concept of both brazing as well as diffusion bonding. During TLP bonding, the liquid phase is transiently formed at the bonding interface. At this point, the melting point of filler metal increases due to the diffusion of element which degrades the melting point from liquid phase to base metal. Subsequently, the bonding occurs by isothermal solidification at the bonding temperature of liquid phase. Here, after bonding, the melting temperature of the joint layer becomes higher than bonding temperature. This review introduces the various aspects of TLP bonding including its principle, materials, applications, advantages and properties in detail.

Transient Liquid Phase Sintered Joints for Power Electronic Modules

2013 ◽  
Author(s):  
Hannes Greve ◽  
F. Patrick McCluskey
Keyword(s):  
Shear Strength ◽  
Melting Point ◽  
Liquid Phase ◽  
Intermetallic Phase ◽  
Transient Liquid Phase ◽  
Liquid Phase Sintering ◽  
Process Time ◽  
Power Electronic ◽  
High Melting ◽  
High Melting Point

Pastes consisting of micron-sized particles of a low melting point metal (i.e. Sn) and a high melting point metal (e.g. Ag, Cu) embedded in organic binder have been developed to attach silicon or wideband gap semiconductor devices to metallic or ceramic substrates for power electronic applications requiring operation at high temperatures. The attachment is made by a pressure-less, low temperature transient liquid phase sintering (LT-TLPS) process in air. Process time and temperature, along with binder type and amount are adjusted to minimize the formation of voids in the joints. Test samples consisting of copper dice on copper substrates joined by these LT-TLPS sinter pastes have been manufactured for shear testing. A shear fixture for high-temperature testing has been designed, and shear tests have been performed at temperatures of 25°C, 125°C, 250°C, 400°C, and 600°C. The influence of process time, process temperature, and the ratio of low-melting point metal (Sn) to high-melting point metal (Ag, Cu) on the shear strength at each temperature has been assessed. It has been shown that the shear strength of TLPS sinter joints remains high up to the melting point of the dominant intermetallic phase of the joint. The joints show no softening below the melting point of these phases. AgSn sinter joints show only limited change in shear strength up to 400°C. CuSn joints exhibit high shear strength up to 600°C for high copper ratios. While process times of 5–15 minutes are sufficient to drive the sintering reaction to near completion, extended curing improves the strength of the sinter joints even more. Failure analyses for joints of different compositions have been conducted along with cross-sectioning of sintered but non-sheared specimens to correlate reliability to microstructure.

CRM MOLYBDENUM-50 RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (12) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Physical Properties ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance

Abstract CRM MOLYBDENUM-50 RHENIUM is a high-melting-point alloy for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Mo-11. Producer or source: Chase Brass & Copper Company Inc..

CRM RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance ◽  
Commercially Pure

Abstract CRM RHENIUM is a commercially pure, high-melting-point metal for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Re-1. Producer or source: Chase Brass & Copper Company Inc..

WIELAND DURO TUNGSTEN

Alloy Digest ◽  
2020 ◽  
Vol 69 (10) ◽  
Keyword(s):  
Melting Point ◽  
Physical Properties ◽  
Tensile Properties ◽  
Modulus Of Elasticity ◽  
Radiation Shielding ◽  
High Melting ◽  
High Modulus ◽  
High Melting Point ◽  
Structural Applications ◽  
Very High

Abstract Wieland Duro Tungsten is unalloyed tungsten produced from pressed-and-sintered billets. The high melting point of tungsten makes it an obvious choice for structural applications exposed to very high temperatures. Tungsten is used at lower temperatures for applications that can benefit from its high density, high modulus of elasticity, or radiation shielding capability. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on machining. Filing Code: W-34. Producer or source: Wieland Duro GmbH.

scholarly journals Enhanced Performance and Diffusion Robustness of Phase-Change Metasurfaces via a Hybrid Dielectric/Plasmonic Approach

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 525
Author(s):  
Joe Shields ◽  
Carlota Ruiz de Galarreta ◽  
Jacopo Bertolotti ◽  
C. David Wright
Keyword(s):  
Melting Point ◽  
Phase Change ◽  
Noble Metals ◽  
Phase Change Materials ◽  
High Efficiency ◽  
The Body ◽  
Design Stage ◽  
High Melting ◽  
Optical Performance ◽  
Electrical Conductors

Materials of which the refractive indices can be thermally tuned or switched, such as in chalcogenide phase-change alloys, offer a promising path towards the development of active optical metasurfaces for the control of the amplitude, phase, and polarization of light. However, for phase-change metasurfaces to be able to provide viable technology for active light control, in situ electrical switching via resistive heaters integral to or embedded in the metasurface itself is highly desirable. In this context, good electrical conductors (metals) with high melting points (i.e., significantly above the melting point of commonly used phase-change alloys) are required. In addition, such metals should ideally have low plasmonic losses, so as to not degrade metasurface optical performance. This essentially limits the choice to a few noble metals, namely, gold and silver, but these tend to diffuse quite readily into phase-change materials (particularly the archetypal Ge2Sb2Te5 alloy used here), and into dielectric resonators such as Si or Ge. In this work, we introduce a novel hybrid dielectric/plasmonic metasurface architecture, where we incorporated a thin Ge2Sb2Te5 layer into the body of a cubic silicon nanoresonator lying on metallic planes that simultaneously acted as high-efficiency reflectors and resistive heaters. Through systematic studies based on changing the configuration of the bottom metal plane between high-melting-point diffusive and low-melting-point nondiffusive metals (Au and Al, respectively), we explicitly show how thermally activated diffusion can catastrophically and irreversibly degrade the optical performance of chalcogenide phase-change metasurface devices, and how such degradation can be successfully overcome at the design stage via the incorporation of ultrathin Si3N4 barrier layers between the gold plane and the hybrid Si/Ge2Sb2Te5 resonators. Our work clarifies the importance of diffusion of noble metals in thermally tunable metasurfaces and how to overcome it, thus helping phase-change-based metasurface technology move a step closer towards the realization of real-world applications.

Facile synthesis of high‐melting point spherical TiC and TiN powders at low temperature

2019 ◽  
Vol 103 (2) ◽  
pp. 889-898 ◽  
Author(s):  
Maoqiao Xiang ◽  
Miao Song ◽  
Qingshan Zhu ◽  
Chaoquan Hu ◽  
Yafeng Yang ◽  
...  
Keyword(s):  
Melting Point ◽  
Low Temperature ◽  
High Melting ◽  
High Melting Point ◽  
Facile Synthesis

Screening of high melting point phase change materials (PCM) in solar thermal concentrating technology based on CLFR

Solar Energy ◽  
2005 ◽  
Vol 79 (3) ◽  
pp. 332-339 ◽  
Author(s):  
Akira Hoshi ◽  
David R. Mills ◽  
Antoine Bittar ◽  
Takeo S. Saitoh
Keyword(s):  
Melting Point ◽  
Phase Change ◽  
Phase Change Materials ◽  
Solar Thermal ◽  
High Melting ◽  
High Melting Point

Observation of Rheed Intensity Oscillations During PbSe/CaF2/Si(111) MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
W. K. Liu ◽  
X. M. Fang ◽  
P. J. McCann ◽  
M. B. Santos
Keyword(s):  
Activation Energy ◽  
Melting Point ◽  
Substrate Temperature ◽  
High Melting ◽  
Arrhenius Behavior ◽  
High Activation ◽  
High Melting Point ◽  
Mbe Growth ◽  
Sublimation Energy ◽  
Initial Nucleation

AbstractRHEED intensity oscillations observed during MBE growth of CaF2 on Si(111) and PbSe on CaF2/Si(111) are presented. The effects of substrate temperature and initial nucleation procedure are investigated. Strong temporal oscillations of the specular beam intensity are found to be most readily observed at temperatures below 200°C for both CaF2 and PbSe. Growth rates measured as a function of cell temperatures exhibit Arrhenius behavior with activation energies of 5.0 eV and 1.93 eV for CaF2 and PbSe, respectively. The relatively high activation energy obtained for CaF2 is consistent with the high melting point and sublimation energy of ionic fluorides.

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