Thermo-mechanical Simulations for Single-Sided and Double-Sided Cooling Power Packages

2016 ◽  
Vol 13 (1) ◽  
pp. 23-32 ◽  
Author(s):  
Hao Zhang ◽  
Simon S. Ang
Keyword(s):  
Heat Dissipation ◽  
Coefficient Of Thermal Expansion ◽  
Heat Removal ◽  
Mechanical Stresses ◽  
Cooling Power ◽  
Power Semiconductor ◽  
Advantages And Disadvantages ◽  
Power Semiconductor Devices ◽  
Chip Carrier ◽  
Packaging Structure

With the emergence of new power semiconductor devices and packaging technologies, the power density of the power packages or modules is increasing rapidly. Double-sided cooling power packages maximize heat dissipation by enabling heat removal from both the top and bottom sides of the module. This article compares single-sided and double-sided cooling power packaging structures to elucidate advantages and disadvantages of these packaging structures in terms of thermal and thermo-mechanical based on finite element simulations. Simulation results reveal that double-sided cooling power packages greatly improve their thermal performances, but they face challenges due to their high thermo-mechanical stresses. The use of a viscoelastic underfill resin and a coefficient of thermal expansion–matched ceramic chip carrier in the double-sided cooling power packaging structure is shown to reduce thermo-mechanical stresses.

Thermal shock and degradation of metallization systems on silicon

2016 ◽  
Vol 33 (2) ◽  
pp. 102-106 ◽  
Author(s):  
Arkady Skvortsov ◽  
Sergey Zuev ◽  
Marina Koryachko ◽  
Vadim Glinskiy
Keyword(s):  
Thermal Shock ◽  
Heat Dissipation ◽  
Mechanical Stresses ◽  
Thermal Source ◽  
Principal Mechanism ◽  
Content Type ◽  
Power Semiconductor ◽  
Liquid Phases ◽  
Aluminum Metallization ◽  
Subsurface Layers

Purpose The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses (amplitude j < 8 × 1010 A/m2, duration t < 800 μs). Design/methodology/approach The results were obtained using oscillography and optical microscopy and through the construction of an empirical model of the thermal degradation of metallization systems. Findings Initially, for the authors’ studies, they deduced an equation that associated the depth of melting with the parameters of a current pulse. Research limitations/implications The authors were able to observe effects only in systems with appropriate adhesion of the thin metal films. For the systems with bad adhesion, the main mechanisms of degradation were associated with the melting of the metal, the formation of melted drops (up to 20 mcm in size) and the movement of these drops along the electrical field due to the electrocapillary effect. Practical/implications The mechanisms the authors studied could only occur in high-power semiconductor devices. Originality/value The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source. The authors’ results show that the mechanical stresses that are strong enough to form dislocations emerge with current flow with power measuring approximately 0.7 Pkr.

The Research of LEDs with Metal Substrates

2015 ◽  
Vol 727-728 ◽  
pp. 277-279
Author(s):  
Hai Kuang ◽  
Shi An He ◽  
Meng Xu
Keyword(s):  
Thermal Conductivity ◽  
High Power ◽  
Heat Dissipation ◽  
Semiconductor Devices ◽  
Copper Substrate ◽  
Luminous Efficiency ◽  
Metal Substrates ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

There are good thermal conductivity, high luminous efficiency in the LEDs with metal substrates, which can effectively solve the problems such as poor heat dissipation、poor reliability of LEDs. The copper substrate LEDs have successfully developed with good performance by SemiLEDs, which indicates the direction of the high-power semiconductor devices for lighting.

A Dimple-Array Interconnect Technique for Power Semiconductor Devices

2001 ◽  
Vol 682 ◽  
Author(s):  
Simon S. Wen ◽  
Daniel Huff ◽  
Guo-Quan Lu
Keyword(s):  
Heat Dissipation ◽  
Thermomechanical Analysis ◽  
Thermal Cycling Test ◽  
Power Devices ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Reliability Characteristics ◽  
Bonding Technology ◽  
Electrical Connections

ABSTRACTThis paper describes a wireless-bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Electrical connections onto the devices are established by soldering arrays of dimples pre-formed on a metal sheet. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced parasitic noises, improved heat dissipation, as well as lowered processing complexity, compared to the conventional wire bonding technology in power module manufacturing. Thermomechanical analysis using thermal cycling test and FEM were also performed to evaluate the reliability characteristics of this interconnect technique for power devices.

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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