Electroless Ni plating solutions for reproducible black pad analyses.

2013 ◽  
Vol 2013 (1) ◽  
pp. 000397-000401
Author(s):  
K.H. Kim ◽  
Jin Yu
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Electroless Nickel ◽  
Complexing Agent ◽  
Chemical Compositions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Black Pad ◽  
Electroless Ni ◽  
Scanning Electron

A large-scale black pad of electroless nickel (EN) plated films were reproduced using pure chemicals: NiCl2·6H2O as the Ni source, NaH2PO2·H2O as the reducing agent, CH3COONa·3H2O and aminoacetate as the complexing agent and the buffer, respectively, and thiourea as the stabilizer. Plating baths with varying constituent compositions were investigated, and chemical compositions most suitable to the black pad study were sought. Cross-sectional scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses showed that the nickel-phosphorus (Ni-P) film made out of the #5 bath best demonstrated the typical characteristics of the black pad phenomenon after the immersion gold (IG) process. Additions of a low level of Thiourea (0.6mg/L), slightly larger amounts of glycine (1∼1.25x) and the complexing agent (1.25x) were suggested from the standpoint of the black pad formation of Ni-P films.

EFFECT OF DIFFERENT PRETREATMENTS TO ELECTROLESS NICKEL OR COBALT PLATING ON HOLLOW MICROSPHERES

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2706-2711
Author(s):  
YAN ZHAO ◽  
RUN ZHANG ◽  
TONG ZHANG ◽  
YUEXIN DUAN
Keyword(s):  
Electron Microscopy ◽  
Electroless Nickel ◽  
Single Step ◽  
Chemical Compositions ◽  
Electroless Nickel Plating ◽  
Nickel Plating ◽  
X Ray ◽  
Surface Morphologies ◽  
Electroless Ni ◽  
Scanning Electron

Different pretreatment methods for electroless nickel and cobalt plating are demonstrated and compared in the present investigation. The surface morphologies of the nickel or cobalt deposits are investigated by scanning electron microscopy (SEM), and the chemical compositions of the coatings are analyzed by energy-dispersive X-ray spectroscopy (EDX). Method of single-step pretreatment is selected as the optimized method for electroless nickel plating process, while improved two-step sensitization-activation and single-step pretreatment methods can be selected for electroless cobalt plating. It can be found that the content of free Co is much lower compared to electroless Ni plating.

Characterization of Al65.0Cu32.9Co2.1 Alloy Containing Nanofibres

2012 ◽  
Vol 186 ◽  
pp. 212-215
Author(s):  
Jacek Krawczyk ◽  
Włodzimierz Bogdanowicz ◽  
Grzegorz Dercz ◽  
Wojciech Gurdziel
Keyword(s):  
Electron Microscopy ◽  
Average Diameter ◽  
Chemical Compositions ◽  
X Ray ◽  
Transmission Electron ◽  
Orthogonal Set ◽  
T Phase ◽  
Terminal Area ◽  
Scanning Electron

Microstructure of terminal area of Al65Cu32.9Co2.1ingots (numbers indicate at.%), obtained via directional solidification was studied. Scanning Electron Microscopy, Transmission Electron Microscopy and X-ray powder diffraction were applied. Point microanalysis by Scanning Electron Microscope was used for examination of chemical compositions of alloy phases. It was found that tetragonal θ phase of Al2Cu stoichiometric formula was the dominate phase (matrix). Additionally the alloy contained orthogonal set of nanofibres of Al7Cu2Co T phase with the average diameter of 50-500 nm and oval areas of hexagonal Al3(Cu,Co)2H-phase, surrounded by monoclinic AlCu η1phase rim. Inside some areas of H-phase cores of decagonal quasicrystalline D phase were observed.

Synthesis and Characterization of In-Doped SnO2 (ITO) Nanowires

2007 ◽  
Vol 121-123 ◽  
pp. 209-214 ◽  
Author(s):  
Zai Yin Huang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Large Scale ◽  
Thermal Evaporation ◽  
Critical Factor ◽  
Argon Atmosphere ◽  
Synthesis And Characterization ◽  
Transmission Electron ◽  
Scanning Electron

Large-scale synthesis of In-doped SnO2 (ITO) nanowires was achieved by direct thermal evaporation of a mixture of Sn and In powders at 900°C in an Argon atmosphere. Scanning electron microscopy and transmission electron microscopy observations show that ITO nanowires have diameter ranging from 20 to 100 nm and lengths up to several tens of micrometers. By altered the reaction temperature, we find that the temperature of the reaction is the critical factor for the morphologies and sizes of the ITO nanowires.

The Formation Mechanism of Carrot Defects in SiC Epifilms

2006 ◽  
Vol 911 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Yi Chen ◽  
Xiaoting Jia ◽  
Jie Bai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mechanism Of Formation ◽  
Cross Sectional ◽  
Screw Dislocations ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Wafer ◽  
Scanning Electron

AbstractCarrot-like defects in a 7&#61616; off-cut (from [0001] toward <1-210> direction) 4H-SiC wafer with a 36μm thick 4H-SiC epilayer have been investigated using Nomarski optical microscopy, synchrotron white beam x-ray topography (SWBXT), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray topographs confirm that threading screw dislocations are often associated with the carrots. Cross-sectional TEM observation confirms that a prismatic stacking fault exists below the carrot. This fault was found to show contrast in all observed diffraction geometries except for g=0004. A model for the mechanism of formation of this type of defect during epitaxial growth is proposed.

TEM Cross-Sectional Analysis of ESD Induced Damage in Input Protection Circuitry

1996 ◽  
Author(s):  
P.T. Nguyen ◽  
D.S. Patrick ◽  
M.L. Hayenga
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Electrostatic Discharge ◽  
Machine Model ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Silicon Melt ◽  
Esd Protection ◽  
Sectional Analysis ◽  
Scanning Electron

Abstract Transmission electron microscopy (TEM) coupled with scanning electron microscopy (SEM) were used to observe the damage caused by machine model (MM) electrostatic discharge (ESD) testing on the ESD protection circuitry of input pins stressed with different ESD voltages. Contact damage was observed in the n-well resistor of the ESD protection circuitry. TEM results of various cross-sections show the formation of a silicon melt beneath the contacts of the n-well resistor. Junction spiking was also observed on some of the stressed devices.

Experimental Study of Precipitation Processes in Oxygen Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. Weber ◽  
R. Yankov ◽  
R. Müller ◽  
W. Skorupa ◽  
S. Reiss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ostwald Ripening ◽  
Nucleation And Growth ◽  
Silicon Substrates ◽  
Clear Trend ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Buried Layer ◽  
Scanning Electron

ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.

Transmission electron microscopy characterization of In1−xGaxSb on (001) GaAs heteroepitaxial system

1992 ◽  
Vol 70 (10-11) ◽  
pp. 866-874 ◽  
Author(s):  
M. D. Robertson ◽  
J. M. Corbett ◽  
J. B. Webb ◽  
R. Rousina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Large Scale ◽  
Lattice Mismatch ◽  
Contrast Imaging ◽  
Cross Sectional ◽  
Diffraction Contrast ◽  
Transmission Electron ◽  
Resolution Electron

Seven In1−xGaxSb [Formula: see text] films grown on a (001) GaAs substrate by metalorganic magnetron sputtering were characterized using cross-sectional transmission electron microscopy techniques. Analysis included high-resolution and diffraction contrast imaging, selected area diffraction, and energy dispersive X-ray methods. The epilayers were not observed to possess significant amounts of large-scale residual strain owing to the lattice mismatch; however, localized strain was apparent under diffraction contrast imaging in some films. High-resolution electron microscope analysis indicated that the interfacial lattice mismatch was accommodated by arrays of 60 and (or) 90° dislocations, the distributions of which were found to obey the Frank–Bilby equation for epitaxial systems. Epilayer tilting was observed in the heteroepitaxial systems that possessed a significant substrate inclination. The magnitude and direction of the film tilt, to a first approximation, appeared to be associated with the particular distribution of 60° dislocations observed at the interface. Also, it was observed that surface roughness of the substrate can lead to grain boundaries in the films. Finally, growth defects, specifically stacking faults and threading dislocations, were present in qualitatively varying degrees in the films studied.

Three Dimensional Characterization of Interfaces in Semiconductors by Scanning Electron Microscopy

1986 ◽  
Vol 69 ◽  
Author(s):  
David C. Joy ◽  
D. M. Maher ◽  
R C Farrow
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Preparation Time ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Alternative Approach ◽  
Imaging Mode ◽  
Structural Characterizations ◽  
Scanning Electron

AbstractIn many semiconductor materials problems, structural characterizations must be achieved in both the lateral and vertical dimensions. Although a combination of cross-sectional and planar transmission electron microscopy can provide this information, the sample preparation time is demanding and only relatively small volumes of material are examined. We describe here an alternative approach in which the charge collection (‘CCM’) imaging mode of the scanning electron microscope (SEM) is used. It is shown that, by varying the incident electron beam energy, electricallly active defects at different positions beneath the entrance surface of the material can be imaged and their depth estimated.

Large Scale Synthesis of BaTiO3 Nanorods by a Template Way

2009 ◽  
Vol 79-82 ◽  
pp. 373-376 ◽  
Author(s):  
Zhao Deng ◽  
Ying Dai ◽  
Hai Rui Liu ◽  
Wen Chen
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Large Scale ◽  
Template Method ◽  
Precipitation Process ◽  
X Ray ◽  
The Core ◽  
Transmission Electron ◽  
Scanning Electron

Large scale BaTiO3 nanorods were successfully synthesized by a template method based on a precipitation process. The templates used in our method are H2Ti8O17 nanorods, which can be synthesized from K2Ti4O9 fibers. The unique process of the synthesis is BaC2O4•0.5H2O shell was coated on the 1-dimensional H2Ti8O17 nanorods (the core). The as-prepared products were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that the BaTiO3 nanorods are ~100-300 nm in diameter and ~2-10 m in length. The process described provides a general route to fabricate this kind of perovskite 1-dimensional nanostructures, such as SrTiO3 and PbTiO3.

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