High dose nitrogen implantation into chromium plates.

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

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EBIC Study of Silicon on Insulator Structures Formed by High Dose Nitrogen Implantation

Journal of The Electrochemical Society ◽

10.1149/1.2096762 ◽

1989 ◽

Vol 136 (3) ◽

pp. 876-878 ◽

Cited By ~ 4

Author(s):

R. Kwor ◽

R. J. Matson ◽

M. M. Al‐Jassim ◽

S. Polchlopek ◽

P. L. F. Hemment ◽

...

Keyword(s):

Silicon On Insulator ◽

High Dose ◽

Nitrogen Implantation

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Formation of C N films by high dose nitrogen implantation in the layered structures

Vacuum ◽

10.1016/s0042-207x(02)00632-2 ◽

2003 ◽

Vol 70 (2-3) ◽

pp. 141-145 ◽

Cited By ~ 2

Author(s):

A.F. Komarov ◽

F.F. Komarov ◽

A.M. Mironov ◽

N.N. Nikiforenko ◽

D. Mączka ◽

...

Keyword(s):

Layered Structures ◽

High Dose ◽

Nitrogen Implantation

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Buried Silicon-Nitride by High Temperature Nitrogen Implantation

MRS Proceedings ◽

10.1557/proc-107-479 ◽

1987 ◽

Vol 107 ◽

Cited By ~ 1

Author(s):

U. Bussmann ◽

F.H.J. Meerbach ◽

E.H. Te Kaat

Keyword(s):

High Temperature ◽

Silicon Nitride ◽

Electron Diffraction ◽

Amorphous Material ◽

Subsequent Annealing ◽

High Dose ◽

Nitrogen Implantation ◽

Tem Analysis ◽

Amorphous Si ◽

Nitride Layers

AbstractBuried silicon nitride layers are formed by high temperature (600-800°C), high dose (0.3-1 x 1018 Ncm -2) nitrogen implantation into silicon. The nitride structure of as-implanted and annealed (6 h at 1200°C) samples is revealed by TEM-analysis. At implantation temperatures up to 600°C an amorphous SixN" layer is formed. At higher temperatures crystalline precipitates are found within an amorphous environment. They are identified as β-Si3N4 by electron diffraction. By subsequent annealing the previously amorphous material crystallizes to a-Si3N4, while the β-grains seem to be stable.

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Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

Materials Science Forum ◽

10.4028/www.scientific.net/msf.711.154 ◽

2012 ◽

Vol 711 ◽

pp. 154-158 ◽

Cited By ~ 3

Author(s):

Xi Song ◽

Jérôme Biscarrat ◽

Anne Elisabeth Bazin ◽

Jean François Michaud ◽

Frédéric Cayrel ◽

...

Keyword(s):

Electrical Properties ◽

Defect Density ◽

Implantation Dose ◽

Specific Contact Resistance ◽

High Dose ◽

Nitrogen Implantation ◽

Transmission Electron ◽

Scanning Transmission ◽

Specific Contact ◽

Activation Ratio

In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100) substrate. Scanning Transmission Electron Microscopy characterizations prove that high dose is responsible for amorphization of the implanted layer and the high defect density after annealing. A high V-shape defect density is still found in the implanted layer after an annealing at 1350°C. By lowering the dose, the layer is less damaged and no amorphization is observed. For the different doses, low Specific Contact Resistances are measured using Ti/Ni contacts. The Specific Contact Resistance value decreases from 8x10-6Ω.cm2for the high dose to 3.2x106Ω.cm2with decreasing the dose. Furthermore, the dopant activation ratio, evaluated by quantitative SSRM measurements, is improved at the same time from 17% (for the high dose) to 60% (for the low dose). This work demonstrates that high activation ratio can be achieved consecutively to a nitrogen implantation at reasonable implantation fluence.

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Diffusion and Defect Structure in Nitrogen Implanted Silicon

MRS Proceedings ◽

10.1557/proc-669-j6.4 ◽

2001 ◽

Vol 669 ◽

Cited By ~ 4

Author(s):

Omer Dokumaci ◽

Richard Kaplan ◽

Mukesh Khare ◽

Paul Ronsheim ◽

Jay Burnham ◽

...

Keyword(s):

Defect Structure ◽

Silicon Oxide ◽

Stacking Faults ◽

Nitrogen Atmosphere ◽

High Dose ◽

Finite Capacity ◽

Nitrogen Diffusion ◽

Nitrogen Implantation ◽

Oxide Interface ◽

Thermal Budget

ABSTRACTNitrogen diffusion and defect structure were investigated after medium to high dose nitrogen implantation and anneal. 11 keV N2+ was implanted into silicon at doses ranging from 2×1014 to 2×1015 cm−2. The samples were annealed with an RTA system from 750°C to 900°C in a nitrogen atmosphere or at 1000°C in an oxidizing ambient. Nitrogen profiles were obtained by SIMS, and cross-section TEM was done on selected samples. TOF-SIMS was carried out in the oxidized samples. For lower doses, most of the nitrogen diffuses out of silicon into the silicon/oxide interface as expected. For the highest dose, a significant portion of the nitrogen still remains in silicon even after the highest thermal budget. This is attributed to the finite capacity of the silicon/oxide interface to trap nitrogen. When the interface gets saturated by nitrogen atoms, nitrogen in silicon can not escape into the interface. Implant doses above 7×1014 create continuous amorphous layers from the surface. For the 2×1015 case, there is residual amorphous silicon at the surface even after a 750°C 2 min anneal. After the 900°C 2 min anneal, the silicon fully recrystallizes leaving behind stacking faults at the surface and residual end of range damage.

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On high dose nitrogen implantation of PVD titanium nitride

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2005.09.010 ◽

2006 ◽

Vol 200 (20-21) ◽

pp. 5915-5920 ◽

Cited By ~ 18

Author(s):

Yurii P. Sharkeev ◽

Steve J. Bull ◽

Anthony J. Perry ◽

Melissa L. Klingenberg ◽

Sergei V. Fortuna ◽

...

Keyword(s):

Titanium Nitride ◽

High Dose ◽

Nitrogen Implantation

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Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.639 ◽

2007 ◽

Vol 556-557 ◽

pp. 639-642 ◽

Cited By ~ 4

Author(s):

Antonella Poggi ◽

Francesco Moscatelli ◽

Yasuto Hijikata ◽

Sandro Solmi ◽

Michele Sanmartin ◽

...

Keyword(s):

Interface State ◽

Interface States ◽

State Density ◽

Conduction Band Edge ◽

High Dose ◽

Wet Oxidation ◽

Nitrogen Implantation ◽

High Concentration ◽

Mos Capacitors ◽

Wide Range

Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process, in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the density of interface states near the conduction band edge if a high concentration of nitrogen is introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC interface reduces the interface states and we did not observe the generation of fixed positive charges in the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slow traps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogen implantation fluence.

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