Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

2012 ◽  
Vol 711 ◽  
pp. 154-158 ◽  
Author(s):  
Xi Song ◽  
Jérôme Biscarrat ◽  
Anne Elisabeth Bazin ◽  
Jean François Michaud ◽  
Frédéric Cayrel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Defect Density ◽  
Implantation Dose ◽  
Specific Contact Resistance ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Specific Contact ◽  
Activation Ratio

In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100) substrate. Scanning Transmission Electron Microscopy characterizations prove that high dose is responsible for amorphization of the implanted layer and the high defect density after annealing. A high V-shape defect density is still found in the implanted layer after an annealing at 1350°C. By lowering the dose, the layer is less damaged and no amorphization is observed. For the different doses, low Specific Contact Resistances are measured using Ti/Ni contacts. The Specific Contact Resistance value decreases from 8x10-6Ω.cm2for the high dose to 3.2x10­6Ω.cm2with decreasing the dose. Furthermore, the dopant activation ratio, evaluated by quantitative SSRM measurements, is improved at the same time from 17% (for the high dose) to 60% (for the low dose). This work demonstrates that high activation ratio can be achieved consecutively to a nitrogen implantation at reasonable implantation fluence.

Characterization of the Source/Drain Region in Mos Devices by Scanning Transmission Electron Microscopy

2001 ◽  
Vol 7 (S2) ◽  
pp. 210-211
Author(s):  
T. Topuria ◽  
N. D. Browning ◽  
Z. Ma
Keyword(s):  
Oxide Semiconductor ◽  
Specific Contact Resistance ◽  
Leakage Currents ◽  
Low Leakage ◽  
Mos Devices ◽  
Ultrashallow Junctions ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Specific Contact ◽  
Image Position

The advancement of metal-oxide-semiconductor (MOS) technology towards sub- 100nm device dimensions presents several technical difficulties. Nanoscaling in MOS devices is specifically governed by difficulties in the formation of ultrashallow junctions for the source/drain regions with the requirement of low resistance and low leakage currents. The use of a silicide (forming Schottky contacts at the source and drain) instead of the conventional ion implanted Si for the contacts allows a reduction in the contact area to be made, due to lower serial resistance per unit area of the silicide. According to the specific contact resistance dependence on the Schottky barrier height (ΦSB) and active dopant concentration (ND),

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

2013 ◽  
Vol 740-742 ◽  
pp. 733-736 ◽  
Author(s):  
Krystian Król ◽  
Mariusz Sochacki ◽  
Marcin Turek ◽  
Jerzy Żuk ◽  
Henryk M. Przewlocki ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Surface State ◽  
Material Properties ◽  
Implantation Dose ◽  
Nitrogen Implantation ◽  
Mos Structure ◽  
Implantation Damage ◽  
Wide Range ◽  
Implantation Dosage

In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that surface state trap density is directly connected to implantation damage and thus implantation conditions. Using research results a trap origin at given energy can be concluded.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

1992 ◽  
Vol 281 ◽  
Author(s):  
W. Y. Han ◽  
H. S. Lee ◽  
Y. Lu ◽  
M. W. Cole ◽  
L. M. Casas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contact ◽  
Auger Electron ◽  
Specific Contact Resistance ◽  
Thermally Stable ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Specific Contact ◽  
Electron Spectrometry

ABSTRACTA thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contacts were thermally stable at 300 °C for 20 hours, and it appeared that the p-contacts were more stable than the n-contacts.

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 825-828
Author(s):  
Alessia Frazzetto ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
R. Lo Nigro ◽  
M. Saggio ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Electrical Parameters ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Specific Contact ◽  
Activation Annealing ◽  
P Type ◽  
Post Implantation

This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs.

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements

2011 ◽  
Vol 679-680 ◽  
pp. 193-196 ◽  
Author(s):  
Xi Song ◽  
Anne Elisabeth Bazin ◽  
Jean François Michaud ◽  
Frédéric Cayrel ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Specific Contact Resistance ◽  
Nitrogen Implantation ◽  
Transfer Length ◽  
Characterization Methods ◽  
Activation Rate ◽  
Specific Contact ◽  
Titanium Nickel

Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method (c­TLM) which allows extracting the specific contact resistance and Scanning Spreading Resistance Microscopy (SSRM) used to measure activated doping concentration. 3C-SiC samples were implanted at room temperature with different energies (ranging from 30 to 150keV) and doses (from 1 to 5.4x1015cm-2) in order to obtain a 300nm thick box-like profile at 5x1020cm-3. To activate the dopant, the samples were then annealed from 1150°C to 1350°C for 1h to 4h. Titanium-nickel c-TLM contacts annealed at 1000°C under argon showed the best results in terms of specific contact resistance (8x10-6.cm2) after a 1350°C–1h annealing. For this annealing condition, the activation rate was assessed by SSRM around 13%. This value confirms the difficulty to activate the dopants introduced into the 3C-SiC as the temperature is limited by the silicon substrate. However, this work demonstrates that low resistance values can be achieved on 3C-SiC, using nitrogen implantation at room temperature.

scholarly journals Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 639-642
Author(s):  
Duy Minh Nguyen ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Heu Vang ◽  
Dominique Planson
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Carrier Mobility ◽  
Ohmic Contacts ◽  
Series Resistance ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
P Type ◽  
Post Implantation

N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followed by a post-implantation annealing with or without a graphite capping layer. Ohmic contacts were formed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears that capping the sample during the annealing reduces considerably the surface roughness and the specific contact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively 1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature have been performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can be explained by the freeze-out of carriers and by the variation of carrier mobility.

Electrical & Structural Properties of TiSi2 Films

1988 ◽  
Vol 116 ◽  
Author(s):  
N.M. Ravindra ◽  
T. Fink ◽  
R.P. Moerkirk ◽  
D. Fathy
Keyword(s):  
Contact Resistance ◽  
Structural Properties ◽  
Specific Contact Resistance ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Measurement Temperature ◽  
Transmission Electron ◽  
Device Structures ◽  
Specific Contact ◽  
Ti Films

AbstractStudies of the electrical and structural properties of TiSi2 films formed during the fabrication of shallow junctions by ion implanting As+ into p–Si through Ti films are reported here. Electrical measurements of the temperature dependent specific contact resistance and structural measurements such as transmission electron microscopy have been performed on these device structures. The specific contact resistance is seen to decrease with increasing measurement temperature. These studies have been carried out on furnace and rapid thermally annealed films.

Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

2008 ◽  
Vol 1072 ◽  
Author(s):  
Semyon D. Savransky ◽  
Ilya V Karpov
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Activation Energies ◽  
New Technique ◽  
Specific Contact Resistance ◽  
Bulk Conductivity ◽  
Specific Contact ◽  
Change Memory

ABSTRACTNew technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.

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