EBIC Study of Silicon on Insulator Structures Formed by High Dose Nitrogen Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176010 ◽

1990 ◽

Vol 48 (4) ◽

pp. 576-577

Author(s):

A. De Veirman ◽

J. Van Landuyt ◽

K.J. Reeson ◽

R. Gwilliam ◽

C. Jeynes ◽

...

Keyword(s):

Ion Implantation ◽

Annealing Treatment ◽

Silicon On Insulator ◽

High Dose ◽

Nitrogen Flow ◽

Cobalt Disilicide ◽

Transmission Electron ◽

Beam Heating ◽

Co Concentration ◽

Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

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The influence of high-dose nitrogen implantation on the soft magnetic properties of FeAlBZr nanometer materials

Vacuum ◽

10.1016/s0042-207x(97)00085-7 ◽

1997 ◽

Vol 48 (10) ◽

pp. 857-860

Author(s):

Huai Wu Zhang ◽

Y.L. Liu ◽

H.C. Wang

Keyword(s):

Magnetic Properties ◽

High Dose ◽

Soft Magnetic Properties ◽

Nitrogen Implantation ◽

Soft Magnetic ◽

Nanometer Materials

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Silicon on Insulator by High Dose Implantation

MRS Proceedings ◽

10.1557/proc-33-41 ◽

1984 ◽

Vol 33 ◽

Cited By ~ 16

Author(s):

P. L. F. Hemment

Keyword(s):

Physical Properties ◽

Thermal Processing ◽

Vlsi Circuits ◽

Silicon On Insulator ◽

High Dose ◽

High Current ◽

Processing Technologies ◽

Oxygen Ions ◽

High Doses ◽

High Dose Implantation

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

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Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

MRS Proceedings ◽

10.1557/proc-53-257 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 7

Author(s):

S.J. Krause ◽

C.O. Jung ◽

S.R. Wilson ◽

R.P. Lorigan ◽

M.E. Burnham

Keyword(s):

Single Crystal ◽

Oxide Layer ◽

Elevated Temperatures ◽

Superficial Layer ◽

Silicon On Insulator ◽

High Dose ◽

Threading Dislocations ◽

Heater Temperature ◽

Buried Oxide ◽

Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

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A transmission electron microscope investigation of the dose dependence of the microstructure of silicon‐on‐insulator structures formed by nitrogen implantation of silicon

Journal of Applied Physics ◽

10.1063/1.348491 ◽

1991 ◽

Vol 69 (6) ◽

pp. 3503-3511 ◽

Cited By ~ 26

Author(s):

C. D. Meekison ◽

G. R. Booker ◽

K. J. Reeson ◽

P. L. F. Hemment ◽

R. F. Peart ◽

...

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Dose Dependence ◽

Silicon On Insulator ◽

Nitrogen Implantation ◽

Electron Microscope Investigation ◽

Microscope Investigation ◽

Transmission Electron

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An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

MRS Proceedings ◽

10.1557/proc-92-241 ◽

1987 ◽

Vol 92 ◽

Author(s):

Jim D. Whitfield ◽

Marie E. Burnham ◽

Charles J. Varker ◽

Syd.R. Wilson

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing ◽

High Energy ◽

Thermally Grown Oxide ◽

Silicon On Insulator ◽

Wafer Surface ◽

High Dose ◽

Active Device ◽

Insulating Layer ◽

Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

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