scholarly journals Growth and some surface characterization of tin Sulphide (SnS) thin film by two-electrode cell arrangement for photo absorption

2021 ◽  
Vol 23 (2) ◽  
pp. 35-42
Author(s):  
A. R. Lasisi ◽  
A. B. Alabi ◽  
B. A. Taleatu ◽  
O. A. Babalola
Keyword(s):  
Thin Film ◽  
Surface Characterization ◽  
Surface Resistivity ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Surface Profiling ◽  
Cell Arrangement ◽  
Light Region ◽  
Electrode Cell ◽  
Uv Visible

This study presented deposition of tin sulphide (SnS) thin film using a two-electrode electrochemical cell arrangement. The bath electrolyte comprised tin sulphate (SnSO4 ), hydrated sodium thiosulphate (Na2S2O3∙5H2O) and sulphuric acid (H2SO4 ). The acid was used to adjust the pH of the bath. The deposited film was characterised using Surface Profilometer, X-Ray Diffractometer (XRD), Uv-Visible Spectrophotometer and four point probe technique. Surface profiling revealed that the film is continuous with thickness of about 60 nm. The XRD result showed that the film has orthorhombic crystal structure. Film's crystallite size was estimated as 0.61 nm and interplanar spacing as 0.29 nm. The Uv-visible Spectrophotometer result reveals that, the film has good absorbance but poor reflectance and transmittance in the visible light region. The film has direct allowed transition with energy band gap of 1.69 eV. Values of surface resistivity and conductivity were deduced from data obtained from Four-point probe studies as 5.12 x 10-4Ω-cm and 1.96 x 103Ω-1cm-1 respectively. The I-V characteristics curve of ITO/SnS/Ag structure is linear indicating an Ohmic contact between the substrate electrode and the deposited layer. It can therefore be suggested that the film can allow pathway for photoabsorption and also aid charge transfer in photovoltaic process. Keywords: tin sulphide, orthorhombic, electrochemical deposition, characterization, photovoltaic and surface resistivity.

Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx

MRS Advances ◽  
2016 ◽  
Vol 1 (41) ◽  
pp. 2801-2806 ◽  
Author(s):  
Faruk Ballipinar ◽  
Alok C. Rastogi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Structural Phase ◽  
Single Step ◽  
Organic Chemical ◽  
Tin Sulfide ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Organic Vapor

ABSTRACTTin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of buried junction structures and thus SnS solar cells in a p-n homojunction or p-i-n structures. In this work, vacuum evaporated Sn thin film with a thickness of 100 nm, was converted to SnS by sulfurization under 100 sccm flow of TBDS vapor preheated to 100°C and structural phase evolution and film growth kinetics were investigated for sulfurization at 200°C, 300°C and 400°C for a periods 90 min. X-ray diffraction studies establish single phase highly crystalline film in orthorhombic crystal structure forms at 200°C. Raman scattering results confirm SnS formation with the identification of 2Ag, 2B2g optical phonons modes. Optical bandgap studies confirm a low energy 1.1-1.4 eV indirect bandgap and a strong absorption threshold between 1.4 to 1.6 eV direct band gap depending on the sulfurization conditions correlating with intrinsic defects and phase structure of the film.

HRTEM and EELS Studies of GdSi2 Nanostructures Grown by Self-Assembly

2005 ◽  
Vol 901 ◽  
Author(s):  
Jiaming Zhang ◽  
Gangfeng Ye ◽  
R. Loloee ◽  
Martin A. Crimp ◽  
Jun Nogami
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Self Assembly ◽  
Earth Metal ◽  
Metal Nanostructures ◽  
Nanometer Scale ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Transmission Electron ◽  
Electron Energy Loss

AbstractThere has been considerable interest in the properties of rare earth metal nanostructures grown epitaxially on Si(001) surfaces. The questions arises as to what extent the nanometer scale lateral dimensions (width and thickness) affect the material properties. We compare thin film Gd silicide samples with Gd nanostructures grown on Si(001) using high resolution transmission electron microscopy (HRTEM). The nanostructures have the same orthorhombic crystal structure as the thicker silicide films. Electron energy loss spectroscopy measurements from metallic Gd and the thin film silicides are also shown as references for similar measurements on the nanostructures.

scholarly journals Structural and microstructural study of SnS thin film semiconductor of 0.2

2019 ◽  
Vol 7 (1) ◽  
pp. 26
Author(s):  
Thomas Ojonugwa Daniel ◽  
Uno Essang Uno ◽  
Kasim Uthman Isah ◽  
Umaru Ahmadu
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapour ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Distribution ◽  
Effect Transistor

SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.  

Spherulitic crystal growth in the prodissoconch larval of Crassostrea virginica

1983 ◽  
Vol 41 ◽  
pp. 518-519
Author(s):  
George G. Cocks ◽  
Louis Leibovitz ◽  
DoSuk D. Lee
Keyword(s):  
Crystal Structure ◽  
Crassostrea Virginica ◽  
Crystal Orientation ◽  
Developmental Changes ◽  
Gastrula Stage ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Stages Of Growth ◽  
Early Stages ◽  
Initial Deposition

Our understanding of the structure and the formation of inorganic minerals in the bivalve shells has been considerably advanced by the use of electron microscope. However, very little is known about the ultrastructure of valves in the larval stage of the oysters. The present study examines the developmental changes which occur between the time of conception to the early stages of Dissoconch in the Crassostrea virginica(Gmelin), focusing on the initial deposition of inorganic crystals by the oysters.The spawning was induced by elevating the temperature of the seawater where the adult oysters were conditioned. The eggs and sperm were collected separately, then immediately mixed for the fertilizations to occur. Fertilized animals were kept in the incubator where various stages of development were stopped and observed. The detailed analysis of the early stages of growth showed that CaCO3 crystals(aragonite), with orthorhombic crystal structure, are deposited as early as gastrula stage(Figuresla-b). The next stage in development, the prodissoconch, revealed that the crystal orientation is in the form of spherulites.

A New Phase of the Na+ Ion Conductor Na3PS4

2019 ◽  
Author(s):  
Theodosios Famprikis ◽  
James Dawson ◽  
François Fauth ◽  
Emmanuelle Suard ◽  
Benoit Fleutot ◽  
...  
Keyword(s):  
Solid Electrolytes ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Ion Conductor ◽  
Solid State Batteries ◽  
Density Analysis ◽  
Two Phases ◽  
Dynamics Simulations

<div> <p>Solid electrolytes are crucial for next‑generation solid‑state batteries and Na<sub>3</sub>PS<sub>4</sub> is one of the most promising Na<sup>+</sup> conductors for such applications. At present, two phases of Na<sub>3</sub>PS<sub>4</sub> have been identified and it had been thought to melt above 500 °C. In contrast, we show that it remains solid above this temperature and transforms into a third polymorph, γ, exhibiting superionic behavior. We propose an orthorhombic crystal structure for γ‑Na<sub>3</sub>PS<sub>4</sub> based on scattering density analysis of diffraction data and density functional theory calculations. We show that the Na<sup>+</sup> superionic behavior is associated with rotational motion of the thiophosphate polyanions pointing to a rotor phase, based on <i>ab initio</i> molecular dynamics simulations and supported by high‑temperature synchrotron and neutron diffraction, thermal analysis and impedance spectroscopy. These findings are of importance for the development of new polyanion‑based solid electrolytes.</p> </div>

scholarly journals Crystal Structures of New Ivermectin Pseudopolymorphs

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 172
Author(s):  
Kirill Shubin ◽  
Agris Bērziņš ◽  
Sergey Belyakov
Keyword(s):  
Crystal Structure ◽  
Molecular Conformation ◽  
Methyl Tert Butyl Ether ◽  
Minor Role ◽  
Scanning Calorimetry ◽  
Orthorhombic Crystal ◽  
Monoclinic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Space Group ◽  
Structure Space

New pseudopolymorphs of ivermectin (IVM), a potential anti-COVID-19 drug, were prepared. The crystal structure for three pseudopolymorphic crystalline forms of IVM has been determined using single-crystal X-ray crystallographic analysis. The molecular conformation of IVM in crystals has been compared with the conformation of isolated molecules modeled by DFT calculations. In a solvent with relatively small molecules (ethanol), IVM forms monoclinic crystal structure (space group I2), which contains two types of voids. When crystallized from solvents with larger molecules, like γ-valerolactone (GVL) and methyl tert-butyl ether (MTBE), IVM forms orthorhombic crystal structure (space group P212121). Calculations of the lattice energy indicate that interactions between IVM and solvents play a minor role; the main contribution to energy is made by the interactions between the molecules of IVM itself, which form a framework in the crystal structure. Interactions between IVM and molecules of solvents were evaluated using Hirshfeld surface analysis. Thermal analysis of the new pseudopolymorphs of IVM was performed by differential scanning calorimetry and thermogravimetric analysis.

Plasmonic and non-plasmonic contributions on photocatalytic activity of Au-TiO2 thin film under mixed UV–visible light

2020 ◽  
Vol 389 ◽  
pp. 125613 ◽  
Author(s):  
Salih Veziroglu ◽  
Marie Ullrich ◽  
Majid Hussain ◽  
Jonas Drewes ◽  
Josiah Shondo ◽  
...  
Keyword(s):  
Thin Film ◽  
Photocatalytic Activity ◽  
Visible Light ◽  
Tio2 Thin Film ◽  
Uv Visible

Flame Retardant Polyamide 6 Composites Using NMH or NMH/MCA/APP

2011 ◽  
Vol 189-193 ◽  
pp. 1208-1211 ◽  
Author(s):  
Yan Shen ◽  
Shao Guo Wen ◽  
Ji Hu Wang ◽  
Hong Bo Liu ◽  
Hai Liang Qi ◽  
...  
Keyword(s):  
Flame Retardant ◽  
Magnesium Hydroxide ◽  
Flame Retardants ◽  
Polyamide 6 ◽  
X Ray Diffraction ◽  
Upward Trend ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Orthogonal Experiments ◽  
Nitrogen Phosphorus

In this paper, flame retardant Polyamide 6 (PA6) composites were prepared by nano-magnesium hydroxide (NMH) or its composites with melamine cyanurate(MCA) and ammonium polyphosphate(APP). Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to analyze the structure of nano-magnesium hydroxide. The properties including tensile properties, molten index (MFI), rockwell hardness and density of flame retardant PA6 were analyzed. Orthogonal experiments were used to study flame retardancy of PA6 with NMH, MCA and APP. The results showed NMH had hexagonal orthorhombic crystal structure with size of 300×200×100nm. Density of polyamide 6 showed an upward trend when the content of NMH was increasing, the mechanical properties and hardness changed little while processing performance serious declined. The flame retardance of nitrogen-phosphorus -inorganic flame retardants was not desirable.

Structural, Dielectric and Electrical Studies of Ba4CaRTi3Nb7O30 (R = Eu, Dy) Ferroelectric System

2013 ◽  
Vol 547 ◽  
pp. 41-48 ◽  
Author(s):  
Prasun Ganguly ◽  
A.M. Biradar ◽  
A.K. Jha
Keyword(s):  
Single Phase ◽  
Microstructural Analysis ◽  
Tungsten Bronze ◽  
Negative Temperature ◽  
Xrd Analysis ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
Paraelectric Phase Transition ◽  
Orthorhombic Crystal Structure

The polycrystalline samples of Ba4CaRTi3Nb7O30 (R = Eu, Dy), members of tungsten-bronze family, were prepared by high-temperature solid state reaction method and studied for their dielectric and electrical properties. X-ray diffraction (XRD) analysis reveals the formation of single-phase compounds having orthorhombic crystal structure at room temperature. Microstructural analysis by scanning electron microscope (SEM) shows that the compounds have well defined grains, which are distributed uniformly throughout the sample. Detailed dielectric properties of the compounds as a function of frequency and temperature show that the compounds undergo non-relaxor kind of ferroelectric-paraelectric phase transition of diffuse nature. Ferroelectric, piezoelectric and pyroelectric studies of the compounds have been discussed in this paper. The temperature dependence of dc conductivity of the compounds have been investigated. The conductivity study over a wide temperature range suggests that the compounds have negative temperature coefficient of resistance (NTCR) behaviour.

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