scholarly journals FABRICATION OF AG SB (SXSE1-X)2 /SI HETEROJUNCTION FOR SOLAR CELL APPLICATION

2020 ◽  
pp. 48-56
Author(s):  
Hiba H.ISSA
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
High Efficiency ◽  
Cubic Phase ◽  
Electrical Measurements ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Size ◽  
Quenching Method

The preparation of the AgSb (SxSe1-x)2 was done by the quenching method. It is a quaternary substance with sulfur. Preparation of AgSb (SxSe1-x)2 thin films with sulfur was done on the glass substrate at room temperature 303K with a pressure vacuum of (0.01) bar by using a technique called pulsed laser deposition at thickness (~100 nanometres). The structural properties of alloys thin films are tested by x-ray diffraction analysis. Our findings showed that all compounds have polycrystalline structure with cubic phase due to the deposition of the AgSb (SxSe1-x)2. The atomic force microscopy is used for showing mean size, wherever mean size decreases, and the roughness becomes more irregularity with the increase of sulphur level in the alloys. The electrical measurements of AgSb (SxSe1-x)2 /p-Si and AgSb (SxSe1-x)2/n-Si heterojunctions which is included I-V properties cell area structures of(0.61) cm2 were measured. The AgSb (SxSe1-x)2/n-Si showed the best results with a maximum open voltage Voc of these heterojunctions with Sulfur level x= 0.4). It was most suitable for solar cell high efficiency (η = 0.07%) at x= 0.4 on n-Si substrate. Keywords: Ag Sb, Quenching Method, Cell Application.

Structural and Optical Properties of PbI2 Thin Films to Fabricate Perovskite Solar Cells

2020 ◽  
Vol 398 ◽  
pp. 140-146
Author(s):  
Kawther A. Khalaph ◽  
Zainab J. Shanan ◽  
Aqel Mashot Jafar ◽  
Falah Mustafa Al-Attar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Perovskite Solar Cells ◽  
Lead Iodide ◽  
Structural And Optical Properties ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Recently, lead iodide is the most materials employment in the perovskite solar cell application. This paper has studied the character of preparation, structural and optical properties of pbI2 materials. Structural properties are included investigation of the measurements X-Ray Diffraction (XRD), Scan Electron Microscopy (SEM), Fourier Transform InfraRed spectroscopy (FTIR) and Atomic Force Microscopy (AFM) tests to the PbI2 thin films samples. Optical properties are included the investigation UV-Vis test of the thin film samples deposited on glass substrates and investigated the Absorption, Transmittance and evaluated energy gap (Eg = 2.3 eV).

EFFECT OF THE CdCl2 TREATMENT ON THE MORPHOLOGY AND STRUCTURAL PROPERTIES OF CdTe THIN FILMS DEPOSITED BY THE CSS METHOD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1681-1685 ◽  
Author(s):  
H. INFANTE ◽  
G. GORDILLO
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Cubic Phase ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sublimation Method ◽  
Cdcl2 Treatment ◽  
Cdte Thin Films

CdTe thin films deposited by the CSS (close spaced sublimation) method, with adequate properties to be used as absorber layer in solar cells, were submitted to a chemical treatment in a saturated CdCl2 solution, followed by thermal annealing in air at 400°C, in order to improve the electronic properties. The effect of chemical and thermal treatments on the morphological and crystallographic properties was studied through atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The studies revealed that the CdTe grows in the cubic phase and that the postdeposition treatments affect the morphology as well as the crystallographic properties; the effect on the morphology is significantly stronger. Increase of the grain size and roughness was observed in samples treated chemically and thermally. On the other hand, no effects were identified on the crystalline structure as induced by the treatments, although recrystallization was observed after thermal annealing.

Characterization of porous silicon for solar cell application by atomic force microscopy

1999 ◽  
Author(s):  
I. Simkiene ◽  
Valentinas J. Snitka ◽  
Kestutis Naudzius ◽  
Vaidas Pacebutas ◽  
Mindaugas Rackaitis
Keyword(s):  
Atomic Force Microscopy ◽  
Solar Cell ◽  
Porous Silicon ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Atomic Force

Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C.W. Hubbard ◽  
U. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Insulator Metal ◽  
Device Applications ◽  
Bst Films ◽  
La Doped

AbstractWe have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Microscopy Analysis of Pyramid Formation Evolution with Ultra-Low Concentrated Na2CO3/NaHCO3 Solution on (100) Si for Solar Cell Application

2013 ◽  
Vol 19 (2) ◽  
pp. 285-292 ◽  
Author(s):  
Amada Montesdeoca-Santana ◽  
Alejandro González Orive ◽  
Alberto Hernández Creus ◽  
Benjamín González-Díaz ◽  
Dietmar Borchert ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Light Trapping ◽  
Cell Surfaces ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Surface Areas ◽  
Atomic Force ◽  
Microscopy Analysis ◽  
Microscopy Techniques

AbstractAn analysis of the nucleation mechanism of pyramids formed in (100) silicon in Na2CO3/NaHCO3 solution has been carried out. This texturization process of silicon by means of Na2CO3/NaHCO3 solutions is of special interest because it can be applied to the silicon solar cell industry to texture solar cell surfaces to decrease the front reflection and enhance light trapping in the cells. For this purpose, two microscopy techniques—scanning electron microscopy and atomic force microscopy—have been used to study the different stages of pyramidal nucleation and formation. The different aspects and factors involved in the texturization process require different analysis conditions and microscopy resolution. Tracing the transformation of determined surface areas and structures has been achieved, contributing clarification of the mechanism of pyramid nucleation in Na2CO3/NaHCO3 solutions.

CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS DEPOSITED BY RF SPUTTER

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4339-4342 ◽  
Author(s):  
JINXIANG DENG ◽  
GUANGHUA CHEN ◽  
XUEMEI SONG
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Cubic Phase ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Fourier Transformation Infrared Spectroscopy

Cubic boron nitride (c-BN) thin films have been deposited on Si substrates by radio frequency sputter. Sputtering target was hot pressed hexagonal boron nitride of 4N purity. Sputtering gas was the mixture of nitrogen and argon. During depositing c-BN thin films, substrates were biased by dc voltage negatively with respect to ground. By optimizing the deposition conditions, the boron nitride (BN) films containing a large amount of cubic phase were obtained. The samples were characterized with Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). According to FTIR, the cubic phase content of c-BN thin films was evaluated to be 92. The B/N ratio was estimated to be approximately 1 from XPS. The AFM shows that the c-BN thin films delaminated from Si substrates obviously.

Characterization of CIGS Thin Films Fabricated from Nanoparticles under Selenization Process

2013 ◽  
Vol 829 ◽  
pp. 357-361
Author(s):  
Hadi Zarei ◽  
Rasoul Malekfar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spin Coating ◽  
High Efficiency ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Synthesis Process ◽  
Solar Cell Application ◽  
Cigs Nanoparticles

In the present report, the synthesis process of CuInxGa1-xSe2 nanoparticles as an absorption layer in tetraethylene glycol using metallic chloride and Se powder for the purpose of solar cell application. Whole processes were performed under glovebox condition. Nanoparticles sizes were achieved via manipulation of reaction temperature and various precursor concentrations. CuInxGa1-xSe2 or CIGS nanoparticles with diameters in the range of about 20-50 nm were prepared via polyol route and purified through centrifugation and precipitation processes. Then nanoparticles were dispersed to obtain stable inks that could be directly used for thin-film deposition via spin coating. Then, CIGS nanoparticles were coated on soda lime glass for fabrication of inorganic thin film solar cell via spin coating as a film. In those devices, the prepared films yielded relatively dense CuInGaSe2 films with some void spaces. For elimination of the void spaces, the nanocrystals were exposed to selenium vapor atmosphere. Filling the voids with selenium can lead to the fabrication of CIGS absorptive layers having good dense structures and high efficiency. CIGS thin films were characterized by various analytical tools, such as XRD, UV-Visible spectroscopy and SEM imaging.

scholarly journals ELECTRONIC PROPERTIES OF THIN FILMS SUBLIMED FROM La@C82 AND Li@C60

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 155-160 ◽  
Author(s):  
V. N. POPOK ◽  
A. V. GROMOV ◽  
M. JÖNSSON ◽  
A. TANINAKA ◽  
H. SHINOHARA ◽  
...  
Keyword(s):  
Thin Films ◽  
Elevated Temperatures ◽  
Film Structure ◽  
Ambient Atmosphere ◽  
Room Temperature Resistivity ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Temperature Dependences

La @ C 82 and Li @ C 60 thin films obtained by sublimation in vacuum are studied using four-probe current–voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La @ C 82 and Li @ C 60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li @ C 60 film structure increasing the film resistivity to values typical for C 60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

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