scholarly journals ANALYSIS OF ELECTRICAL BEHAVIOR OF SOI LDMOSFET WITH RESPECT TO TEMPERATURE AND DOPING USING T-CAD SIMULATOR

2015 ◽  
pp. 206-209
Author(s):  
DEEKSHA BAJPAI ◽  
AVNISH KUMAR UPADHYAY
Keyword(s):  
Temperature Coefficient ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Wireless System ◽  
Current Threshold ◽  
Frequency Power

In this paper, the effect of temperature variation and doping variation of p-body on various parameters like Breakdown voltage, on resistance, drain leakage current, threshold voltage etc of SOI laterally diffused MOSFET has been analyzed. Since power mosfet is designed for radio frequency power amplifiers which is used in wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer in order to reduce the leakage current and also prohibit the formation of parasitic diode with substrate. On the basis of analysis we are able to prove that this SOI LDMOSFET has +ve temperature coefficient for breakdown voltage, negative temp coefficient for threshold voltage, positive temperature coefficient for on resistance and +ve temperature coefficient for drain leakage current.

scholarly journals Effect of temperature on toxicity of selected insecticides to forest beetle Anoplotrupes Stercorosus / Interakcja temperatury z wybranymi insektycydami chrząszcza leśnego Anoplotrupes stercorosus

2013 ◽  
Vol 18 (1-2) ◽  
pp. 103-108 ◽  
Author(s):  
Bartosz Piechowicz ◽  
Przemysław Grodzicki
Keyword(s):  
Temperature Coefficient ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Benzoyl Urea ◽  
The Impact

Abstract In 2007 and 2008 research on the impact of temperature, ranging from 14 to 39°C on the survivability of an adult Anoplotrupes stercorosus intoxicated by insecticide preparations from the group of phosphoorganic insecticides (diazinon), carbamate (pirimicarb), quinazolines (fenazaquin), oxadiazine (indoxacarb), benzoyl urea insecticides (teflubenzuron), neonicotinoids (acetamiprid) and pyrethroids (beta-cyfluthrin) was carried out. The results obtained indicate that all preparations used in tests had a positive temperature coefficient.

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 865-868
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Avalanche Photodiodes ◽  
Positive Temperature Coefficient ◽  
Avalanche Breakdown ◽  
Positive Temperature ◽  
Electrical And Optical Properties ◽  
Positive Angle

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

scholarly journals Effect of Temperature on the I-V Characteristics of a Polycrystalline Solar Cell

2016 ◽  
Vol 3 (1) ◽  
pp. 35 ◽  
Author(s):  
Indra Bahadur Karki
Keyword(s):  
Temperature Coefficient ◽  
Short Circuit ◽  
Negative Temperature ◽  
Short Circuit Current ◽  
Positive Temperature Coefficient ◽  
Open Circuit ◽  
Outdoor Environment ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Full Spectrum

<p>The present paper reports the temperature dependencies of full-spectrum photovoltaic parameters for poly-crystalline PV module. The measurements were performed under outdoor environment conditions. The most interesting feature that was observed for these devices was that above a cell temperature of 20°C the positive temperature coefficient observed for the short-circuit current exceeds in magnitude the negative temperature coefficient that was found for the open-circuit voltage. This means that, unlike the situation for conventional PV devices, these cells actually exhibit decrease in efficiency with increasing temperature (reaching a value of 0.05 % at 60°C).</p><p>Journal of Nepal Physical Society Vol.3(1) 2015: 35-40</p>

The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

2000 ◽  
Vol 622 ◽  
Author(s):  
Y. S. Lee ◽  
M. K. Han ◽  
Y. I. Choi
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficient ◽  
Temperature Dependent ◽  
Increasing Temperature ◽  
Temperature Applications

ABSTRACTThe breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.

Effect of temperature on the toxicity of S-bioallethrin andcypermethrin to susceptible and kdr-resistant strains of Blattella germanica (L.) (Dictyoptera: Blattellidae)

1987 ◽  
Vol 77 (3) ◽  
pp. 431-435 ◽  
Author(s):  
Jeffrey G. Scott
Keyword(s):  
Temperature Coefficient ◽  
Negative Temperature Coefficient ◽  
Blattella Germanica ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Pyrethroid Insecticides ◽  
Resistant Strains ◽  
The Difference

AbstractThe toxicity of two pyrethroid insecticides, S-bioallethrin and cypermethrin, was investigated over time at 12, 25 and 31°C in susceptible and kdr resistant strains of Blattella germanica (L.). Both strains showed a negative temperature coefficient (i.e., greater kill with decreasing temperature) for S-bioallethrin. The susceptible strain had a negative temperature coefficient for knockdown, but a positive temperature coefficient for mortality towards cypermethrin. The resistant strain had a negative temperature coefficient towards cypermethrin at all times. Resistance to S-bioallethrin was generally greatest at 25°C initially, although the difference between temperatures and the level of resistance diminished with time. Resistance to cypermethrin was significantly less at 12°C than at 25 or 31°C.

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

2011 ◽  
Vol 679-680 ◽  
pp. 706-709 ◽  
Author(s):  
Reza Ghandi ◽  
Benedetto Buono ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Surface Passivation ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Positive Temperature ◽  
Large Area ◽  
Dc Current

In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This design provides a stable open-base breakdown voltage of 2.8 kV which is about 75% of the parallel plane breakdown voltage. The small area devices shows a maximum dc current gain of 55 at Ic=0.33 A (JC=825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4 mΩ•cm2. The large area device shows a maximum dc current gain of 52 at Ic = 9.36 A (JC=312 A/cm2) and VCESAT = 1.14 V at Ic = 5 A that corresponds to an ON-resistance of 6.8 mΩ•cm2. Also these devices demonstrate a negative temperature coefficient of the current gain (β=26 at 200°C) and positive temperature coefficient of the ON-resistance (RON = 10.2 mΩ•cm2).

Sign in / Sign up

Export Citation Format

Share Document