Effect of Cold Working and Annealing on Oxidation Rates of Copper in Dry Air at Room Temperature

CORROSION ◽  
1968 ◽  
Vol 24 (12) ◽  
pp. 407-410 ◽  
Author(s):  
P. K. KRISHNAMOORTHY ◽  
S. C SIRCAR
Keyword(s):  
Room Temperature ◽  
Lattice Distortion ◽  
Cold Working ◽  
Oxide Films ◽  
Dry Air ◽  
Oxidation Rates ◽  
Substrate Metal ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of

Abstract The effect of plastic deformation and further annealing on the kinetics of growth of thin oxide films on copper at 30 C (86 F) has been investigated. Oxidation rate was found to decrease markedly with increasing deformation. Further annealing showed an increase in the rate, the most pronounced changes occurring during the recrystallization stage. Results are interpreted in the light of Cabrera-Mott theory of growth of very thin oxide films on metals. The change in rate has been related to the concentration of cation vacancies in the Cu2O semi-conductor, which is dependent on the lattice distortion and defect concentration of the substrate metal.

RECOMBINATION OF RECOIL FRAGMENTS IN NEUTRON-IRRADIATED POTASSIUM CHROMATE

1956 ◽  
Vol 34 (3) ◽  
pp. 275-283 ◽  
Author(s):  
A. G. Maddock ◽  
M. M. de Maine
Keyword(s):  
Solid Solutions ◽  
Oxide Films ◽  
Potassium Chromate ◽  
Diffusion Controlled ◽  
Tentative Hypothesis ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of ◽  
Bimolecular Mechanism ◽  
Existing Data

The kinetics of the process whereby the retention increases on heating previously neutron-irradiated potassium chromate have been investigated. The results cannot be explained by any unimolecular or bimolecular mechanism, nor by a combination of a few such steps. The data are not compatible with the commoner diffusion-controlled mechanisms. Experiments on solid solutions of potassium chromate in potassium fluoberyllate suggest that the process involves the recombination of the fragments from individual rupture events. A tentative hypothesis, analogous to the theory of the formation of very thin oxide films on metals, is advanced and it accounts for all the existing data.

Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen

1998 ◽  
Vol 37 (Part 2, No. 12A) ◽  
pp. L1455-L1457 ◽  
Author(s):  
Masahito Tagawa ◽  
Tatsuhiko Ema ◽  
Hiroshi Kinoshita ◽  
Nobuo Ohmae ◽  
Masataka Umeno ◽  
...  
Keyword(s):  
Molecular Oxygen ◽  
Room Temperature ◽  
Oxide Films ◽  
Neutral Beam ◽  
Thin Oxide Films ◽  
Thin Oxide

KINETICS OF THIN OXIDE FILM GROWTH ON METAL CRYSTALS

2000 ◽  
Vol 07 (01n02) ◽  
pp. 135-139 ◽  
Author(s):  
V. P. ZHDANOV ◽  
P. R. NORTON
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Film Growth ◽  
Phase Interface ◽  
Oxide Interface ◽  
Thin Oxide Film ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of

A seminal model describing the kinetics of growth of thin oxide films on metal crystals was proposed by Cabrera and Mott (CM). The model is based on the assumption that the growth is limited by the field-facilitated activated jumps of metal ions located in steps on the metal–oxide interface. We generalize the CM model by (i) exploring the interplay of jumps of metal ions from the step and terrace sites at the metal–oxide interface, and (ii) scrutinizing the processes at the oxide–gas-phase interface. The former factor is found to change the physical meaning of the parameters in the CM growth law. The latter factor results in modification of the growth law. In particular, the oxidation kinetics becomes dependent on the O2 pressure. More specifically, the oxidation rate is predicted to increase with increasing pressure. This effect is, however, rather weak and becomes progressively weaker with increasing oxide film thickness.

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