scholarly journals New insights in the mechanisms of the reaction 3.65 Å phase  =  clinoenstatite + water down to nanoscales

2021 ◽  
Vol 33 (6) ◽  
pp. 675-686
Author(s):  
Monika Koch-Müller ◽  
Oona Appelt ◽  
Bernd Wunder ◽  
Richard Wirth

Abstract. The reaction of 3.65 Å phase <=> clinoenstatite + water was investigated in five experiments at 10 GPa, 470–600 ∘C, using a rotating multi-anvil press. Under these P/T conditions, clinoenstatite exists in its high-pressure modification, which, however, is not quenchable to ambient conditions but transforms back to low-pressure clinoenstatite. The quenched run products were characterized by electron microprobe analyses (EMPA), powder X-ray diffraction (XRD), Raman spectroscopy and by high-resolution transmission electron microscopy (HRTEM) on focused ion beam (FIB)-cut foils. We bracketed the reaction in the T range 470 to 510 ∘C (at 10 GPa). The hydration of clinoenstatite to the 3.65 Å phase at 470 ∘C was very sluggish and incomplete even after 96 h. Clinoenstatites range in size from less than 1 to up to 50 µm. Usually clinoenstatite has a very small grain size and shows many cracks. In sub-micron-sized broken clinoenstatite, an amorphous phase (0.91Mg:1.04Si, with about 20 wt % H2O) was observed, which further transformed with increasing reaction time into the 3.65 Å phase (1Mg:1Si, with 34 wt % H2O). Thus, the sub-micron-sized fractured clinoenstatite transformed via an amorphous water-bearing precursor phase to the 3.65 Å phase. The dehydration to clinoenstatite was faster but still incomplete after 72 h at 600 ∘C. From the backscattered electron images of the recovered sample of the dehydration experiment, it is obvious that there is a high porosity due to dehydration of the 3.65 Å phase. Again, the grain size of clinoenstatite ranges from less than 1 up to 50 µm. There are still some clinoenstatite crystals from the starting material present, which can clearly be distinguished from newly formed sub-micron-sized clinoenstatite. Additionally, we observe a water-rich crystalline phase, which does not represent the 3.65 Å phase. Its Raman spectra show the double peaks around 700 and 1000 cm−1 characteristic for enstatite and strong water bands at 3700 and 3680 cm−1. The Mg:Si ratio of 0.90:1.04 was determined by EMPA, totalling to 81 wt %, in accordance with its high water content. Diffraction patterns from high-resolution images (fast Fourier transform – FFT) are in agreement with an orthoenstatite crystal structure (Pbca). The surprising observation of this study is that, in both directions of the investigated simple reaction, additional metastable phases occur which are amorphous in the hydration and crystalline in the dehydration reaction. Both additional phases are water rich and slightly deviate in composition from the stable products 3.65 Å phase and clinoenstatite, respectively. Thus, as a general remark, conventional investigations on reaction progress should be complemented by nanoscale investigations of the experimental products because these might reveal unpredicted findings relevant for the understanding of mantle processes. The extreme reduction in grain size observed in the dehydration experiments due to the formation of nanocrystalline clinoenstatite rather than the slowly released fluids might cause mechanical instabilities in the Earth's mantle and, finally, induce earthquakes.

Author(s):  
Becky Holdford

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).


Author(s):  
Po Fu Chou ◽  
Li Ming Lu

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.


2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.


2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.


2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.


2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.


Author(s):  
Dietmar Vogel ◽  
Astrid Gollhardt ◽  
Bernd Michel

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.


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