scholarly journals In-line monitoring of electrolytes and urea during continuous renal replacement therapy

2020 ◽  
Vol 9 (2) ◽  
pp. 251-262
Author(s):  
Marc Berger ◽  
Merle Sehlmeyer ◽  
Flora Sellering ◽  
Hannes Röhrich ◽  
Thorsten Perl ◽  
...  
Keyword(s):  
Field Effect ◽  
Continuous Monitoring ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Blood Parameters ◽  
Preclinical Study ◽  
Sodium Potassium ◽  
Dialysis Treatment ◽  
Packed Red Blood Cells ◽  
Sensor Assembly

Abstract. The individualization of dialysis treatment using a customized dialysate composition usually requires a continuous measurement of electrolytes and urea in blood. The current practices are spot measurements of blood samples either with blood gas analyzers or in the laboratory, involving considerable personnel effort. Furthermore, the measured values are time delayed and not available in a continuous fashion. In this paper we investigate an in-line concept for continuous monitoring of important blood parameters such as sodium, potassium, calcium and urea concentrations in blood serum using ion-selective electrodes. This concept is evaluated in a preclinical study with human packed red blood cells as a test medium over a period of 7 h. It has been shown that the electrolytes can be well monitored. In addition, we present first measurements with ion-sensitive field-effect transistors in a miniaturized sensor assembly. Therefore, new low-cost electronics for such ion-sensitive field-effect transistors have been developed.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 863
Author(s):  
Mahmuda Akter Monne ◽  
Peter Mack Grubb ◽  
Harold Stern ◽  
Harish Subbaraman ◽  
Ray T. Chen ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
Phased Array ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Array Antenna ◽  
Phased Array Antenna ◽  
Field Patterns ◽  
Radiating Element ◽  
True Time

Low-cost and conformal phased array antennas (PAAs) on flexible substrates are of particular interest in many applications. The major deterrents to developing flexible PAA systems are the difficulty in integrating antenna and electronics circuits on the flexible surface, as well as the bendability and oxidation rate of radiating elements and electronics circuits. In this research, graphene ink was developed from graphene flakes and used to inkjet print the radiating element and the active channel of field effect transistors (FETs). Bending and oxidation tests were carried out to validate the application of printed flexible graphene thin films in flexible electronics. An inkjet-printed graphene-based 1 × 2 element phased array antenna was designed and fabricated. Graphene-based field effect transistors were used as switches in the true-time delay line of the phased array antenna. The graphene phased array antenna was 100% inkjet printed on top of a 5 mil flexible Kapton® substrate, at room temperature. Four possible azimuth steering angles were designed for −26.7°, 0°, 13°, and 42.4°. Measured far-field patterns show good agreement with simulation results.

Low-cost fabrication of submicron all polymer field effect transistors

2006 ◽  
Vol 88 (13) ◽  
pp. 133502 ◽  
Author(s):  
J. Z. Wang ◽  
J. Gu ◽  
F. Zenhausern ◽  
H. Sirringhaus
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost

scholarly journals Low cost high voltage GaN polarization superjunction field effect transistors

2017 ◽  
Vol 214 (8) ◽  
pp. 1600834 ◽  
Author(s):  
H. Kawai ◽  
S. Yagi ◽  
S. Hirata ◽  
F. Nakamura ◽  
T. Saito ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost

CNTFET Gas Sensors Using SWCNT Mats: Method for Low-cost Fabrication, Solution to Improve Selectivity, Experimental Results using Interfering Agents

2009 ◽  
Vol 1204 ◽  
Author(s):  
Paolo Bondavalli ◽  
Louis Gorintin ◽  
Pierre Legagneux ◽  
Didier Pribat ◽  
Laurent Caillier ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Experimental Results ◽  
Flexible Substrates ◽  
Metal Electrodes ◽  
Sensing Applications

AbstractThe first paper showing the great potentiality of Carbon Nanotubes Field Effect transistors (CNTFETs) for gas sensing applications was published in 2000 [1]. It has been demonstrated that the performances of this kind of sensors are extremely interesting: a sensitivity of around 100ppt (e.g. for NO2 [2]) has been achieved in 2003 and several techniques to improve selectivity have been tested with very promising results [2]. The main issues that have not allowed, up to now, these devices to strike more largely the market of sensors, have been the lack of an industrial method to obtain low-cost devices, a demonstration of their selectivity in relevant environments and finally a deeper study on the effect of humidity and the possible solutions to reduce it. This contribution deals with CNTFETs based sensors fabricated using air-brush technique deposition on large surfaces. Compared to our last contribution [3], we have optimized the air-brush technique in order to obtain high performances transistors (Log(Ion)/Log(Ioff) ∼ 5/6) with highly reproducible characteristics : this is a key point for the industrial exploitation. We have developed a machine which allows us the dynamic deposition on heated substrates of the SWCNT solutions, improving dramatically the uniformity of the SWCNT mats. We have performed tests using different solvents that could be adapted as a function of the substrates (e.g. flexible substrates). Moreover these transistors have been achieved using different metal electrodes (patented approach [4]) in order to improve selectivity. Results of tests using NO2, NH3 with concentrations between ∼ 1ppm and 10ppm will be shown during the meeting.

scholarly journals A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

2016 ◽  
Vol 1 (5) ◽  
pp. 1600090 ◽  
Author(s):  
Inés Temiño ◽  
Freddy G. Del Pozo ◽  
M. R. Ajayakumar ◽  
Sergi Galindo ◽  
Joaquim Puigdollers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Low Cost ◽  
Organic Field Effect Transistors
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