scholarly journals Cobalt Doped SnO2 Thin Film for Detection of Vapor Phase Hydrogen Peroxide

2021 ◽  
pp. 8-18
Author(s):  
M. S. Aleksanyan ◽  
V. M. Aroutiounian ◽  
G. E. Shahnazaryan ◽  
A. G. Sayunts

A technology was developed for manufacturing solid-state semiconductor sensor sensitive to hydrogen peroxide vapors. Gas sensitive nanostructured films made of doped metal oxide SnO2<Co> were manufactured by the high-frequency magnetron sputtering method. The chemical composition of prepared SnO2<Co> targets was analyzed and the thickness of the deposited doped metal oxide film was measured. The morphology of the deposited Co-doped SnO2 film was studied by scanning electron microscopy. The gas sensing characteristics to the different concentrations of hydrogen peroxide vapors at various operating temperatures were also studied. The Co-doped SnO2 sensor showed enough sensitivity to very low concentration of hydrogen peroxide vapors (875 ppb) at the operating temperature of 100 °C. The SnO2<Co> based sensor can be successfully used in medical diagnostic apparatus for determining low concentration of hydrogen peroxide vapors in exhaled air.

2019 ◽  
Vol 785 ◽  
pp. 819-825 ◽  
Author(s):  
Zili Zhang ◽  
Chenbo Yin ◽  
Liu Yang ◽  
Jin Jiang ◽  
Yu Guo

YMER Digital ◽  
2021 ◽  
Vol 20 (12) ◽  
pp. 504-509
Author(s):  
C. K Nanhey ◽  
◽  
M. K Bhanarkar ◽  
B. M. Sargar ◽  
◽  
...  

Since many years, metal oxide semiconductor has paid too much interest as a gas sensing material by researchers because of wide performance. TiO2 is one of the majority crucial metal oxide which produced better performance in thin film development. Advanced spray pyrolysis system was used to develop thin film. The gas sensing characteristics TiO2 films are evaluated with responses. The gas sensing response, electrical characterization and sensitivity are corporate.


2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2124-2124
Author(s):  
Takafumi Akamatsu ◽  
Toshio Itoh ◽  
Yoshitake Masuda

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2710
Author(s):  
Jianghua Luo ◽  
Yishan Jiang ◽  
Feng Xiao ◽  
Xin Zhao ◽  
Zheng Xie

Nowadays, despite the easy fabrication and low cost of metal oxide gas sensors, it is still challenging for them to detect gases at low concentrations. In this study, resistance-matched p-type Cu2O and n-type Ga-doped ZnO, as well as p-type CdO/LaFeO3 and n-type CdO/Sn-doped ZnO sensors were prepared and integrated into p + n sensor arrays to enhance their gas-sensing performance. The materials were characterized by scanning electron microscopy, transmittance electron microscopy, and X-ray diffractometry, and gas-sensing properties were measured using ethanol and acetone as probes. The results showed that compared with individual gas sensors, the response of the sensor array was greatly enhanced and similar to the gas response product of the p- and n-type gas sensors. Specifically, the highly sensitive CdO/LaFeO3 and CdO/Sn-ZnO sensor array had a high response of 21 to 1 ppm ethanol and 14 to 1 ppm acetone, with detection limits of <0.1 ppm. The results show the effect of sensor array integration by matching the two sensor resistances, facilitating the detection of gas at a low concentration.


2002 ◽  
Vol 81 (2-3) ◽  
pp. 176-181 ◽  
Author(s):  
Chang-Hyun Shim ◽  
Dae-Sik Lee ◽  
Sook-I Hwang ◽  
Myoung-Bok Lee ◽  
Jeung-Soo Huh ◽  
...  

2015 ◽  
Vol 4 (2) ◽  
pp. 271-280 ◽  
Author(s):  
A. A. Haidry ◽  
N. Kind ◽  
B. Saruhan

Abstract. Elevated temperatures and humidity contents affect response, lifetime and stability of metal-oxide gas sensors. Remarkable efforts are being made to improve the sensing characteristics of metal-oxide-based sensors operating under such conditions. Having versatile semiconducting properties, SnO2 is prominently used for gas sensing applications. The aim of the present work is to demonstrate the capability of the Al-doped SnO2 layer as NO2 selective gas sensor working at high temperatures under the presence of humidity. Undoped SnO2 and Al-doped SnO2 (3 at. % Al) layers were prepared by the radio frequency (r.f.) reactive magnetron sputtering technique, having an average thickness of 2.5 μm. The sensor response of Al-doped SnO2 samples was reduced in the presence of background synthetic air. Moreover, under dry argon conditions, Al doping contributes to obtain a stable signal and to lower cross-sensitivity to CO in the gas mixtures of CO + NO2 at temperatures of 500 and 600 °C. The Al-doped SnO2 sensors exhibit excellent chemical stability and sensitivity towards NO2 gas at the temperature range of 400–600 °C under a humid environment. The sensors also showed satisfactory response (τres = 1.73 min) and recovery (τrec = 2.7 min) towards 50 ppm NO2 in the presence of 10 % RH at 600 °C.


2018 ◽  
Vol 7 (1) ◽  
pp. 281-288 ◽  
Author(s):  
Vladimir Aroutiounian ◽  
Valeri Arakelyan ◽  
Mikayel Aleksanyan ◽  
Gohar Shahnazaryan ◽  
Petr Kacer ◽  
...  

Abstract. Thin-film hydrogen peroxide vapor sensors made from Co-doped SnO2 and La-doped ZnO were manufactured using the high-frequency magnetron sputtering method. Thicknesses of deposited doped metal oxide films were measured and their morphology was investigated. The gas sensing characteristics of the prepared sensors were measured at different concentrations of hydrogen peroxide vapors and different operating temperatures of the sensor. It was found that both sensors made from doped metal oxides SnO2 and ZnO exhibit a sufficient response to 10 ppm of hydrogen peroxide vapors at the 200 and 220 ∘C operating temperature, respectively. It was established that the dependencies of the response on hydrogen peroxide vapor concentration have a linear character for prepared structures at the 150 ∘C operating temperature and can be used for determination of hydrogen peroxide vapor concentration.


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