scholarly journals Fabrication and Characterization of Indium Tin Oxide Films

2017 ◽  
Vol 15 (2) ◽  
pp. 170-175 ◽  
Author(s):  
Shiuh-Chuan Her ◽  
Chun-Fu Chang
Keyword(s):  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Wavelength Region ◽  
Hall Effect Measurement ◽  
Optical Transmittance ◽  
Preparation Temperature ◽  
Different Temperatures ◽  
Ito Films

Background Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding of the effects of preparation temperature on indium tin oxide (ITO) films, to improve their performance for optoelectronic applications. Methods ITO films were deposited on glass substrate at different temperatures, using direct current (DC) magnetron sputtering. The influence of substrate temperature on the microstructure and electrical and optical properties was studied. The surface topography and microstructure of the films were analyzed by atomic force microscopy. The electrical resistivity and optical transmittance of the films were measured using the Hall effect measurement and spectrometer, respectively. Results The results showed that both the surface roughness and film thickness increased as the substrate temperature increased. Transmittance increased from 78% to 80% in the visible wavelength region, while resistivity decreased from 6.05 × 10−4 to 3.27 × 10−4 Ω-cm as the substrate temperature increased from 25°C to 275°C. Conclusions High-quality ITO films with low resistivity and high transmittance can be achieved by increasing the deposition temperature.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

scholarly journals Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

2021 ◽  
Vol 55 (4) ◽  
pp. 360
Author(s):  
Д.А. Кудряшов ◽  
А.А. Максимова ◽  
Е.А. Вячеславова ◽  
А.В. Уваров ◽  
И.А. Морозов ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Wavelength Region ◽  
Electrical And Optical Properties ◽  
Short Wavelength Region ◽  
Order Of Magnitude ◽  
Oxygen Addition ◽  
Ito Films

The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2−14)·10^−2 Ohm·cm) for different positions of the substrate on the substrate holder along the radius in the range of 0−14cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO

scholarly journals The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shih-Hao Chan ◽  
Meng-Chi Li ◽  
Hung-Sen Wei ◽  
Sheng-Hui Chen ◽  
Chien-Cheng Kuo
Keyword(s):  
Sheet Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Transparent Conductive Films ◽  
Sensor Applications ◽  
Conductive Films ◽  
Touch Sensor ◽  
Ito Films

This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO) transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

scholarly journals Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4959
Author(s):  
Ke-Ding Li ◽  
Po-Wen Chen ◽  
Kao-Shuo Chang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Liquid Electrolyte ◽  
Conducting Oxides ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Different Temperatures ◽  
Zinc Tin Oxide ◽  
Temperature Deposition

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from −1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).

INFLUENCE OF CONTINUOUS AND DISCONTINUOUS DEPOSITIONS ON PROPERTIES OF ITO FILMS PREPARED BY DC MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (26) ◽  
pp. 3157-3170 ◽  
Author(s):  
K. AIEMPANAKIT ◽  
P. RAKKWAMSUK ◽  
S. DUMRONGRATTANA
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Energy Gap ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Saturation Curve ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω· cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

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