INFLUENCE OF CONTINUOUS AND DISCONTINUOUS DEPOSITIONS ON PROPERTIES OF ITO FILMS PREPARED BY DC MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (26) ◽  
pp. 3157-3170 ◽  
Author(s):  
K. AIEMPANAKIT ◽  
P. RAKKWAMSUK ◽  
S. DUMRONGRATTANA
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Energy Gap ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Saturation Curve ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω· cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

NANO-INDENTER MECHANICAL PROPERTIES OF ITO/GLASS THIN FILM DEPOSITED BY DC MAGNETRON SPUTTERING METHOD AT LOW TEMPERATURE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4322-4327
Author(s):  
HAN-KI YOON ◽  
DO HYOUNG KIM ◽  
DO HOON SHIN ◽  
RI-ICHI MURAKAMI
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Optical Transmittance ◽  
Experimental Result ◽  
Dc Magnetron Sputtering ◽  
Ito Film ◽  
Ito Glass ◽  
Sputtering Pressure ◽  
Ito Films

The ITO film was deposited onto the glass substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment. An indium tin alloy ( In 2 O 3(90 wt %)+ SnO 2(10 wt %)) target was used. The Total sputtering pressure was varied from 2.6×10-1 to 8.3×10-1 Pa . The experimental result showed that the ITO film produced at room temperature had microstructure in which a X-ray diffraction peak is not clear, regardless of the total sputtering pressure. All the films showed a high optical transmittance. The ITO films prepared at low pressures gave low electrical resistivity. The elastic modulus and hardness of ITO films on various total sputtering pressures were increased with decreasing the total sputtering pressure and this tendency was similar to the change in electrical resistivity with decreasing the total sputtering pressure.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Influence of the Tin Concentration in Indium Tin Oxide (ITO) Films Deposited by DC Magnetron Sputtering for Touch Panels

2014 ◽  
Vol 9 (3) ◽  
pp. 414-418
Author(s):  
Sang Hyun Cho ◽  
Hyo Jin Kim ◽  
Sung Ho Lee ◽  
Jae IK Woo ◽  
Kyu Ho Song ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dc Magnetron Sputtering ◽  
Touch Panels ◽  
Ito Films

PREPARATION AND CHARACTERIZATION OF ITO THIN FILMS ON GLASS BY A SOL–GEL PROCESS USING METAL SALTS

2004 ◽  
Vol 03 (04n05) ◽  
pp. 447-454 ◽  
Author(s):  
C. SU ◽  
T.-K. SHEU ◽  
M.-A. WAN ◽  
Y.-T. CHANG ◽  
M.-C. FENG
Keyword(s):  
Electrical Resistivity ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Preparation Conditions ◽  
Tin Chloride ◽  
Ito Films

Indium-tin-oxide (ITO) thin film is one of the indispensable materials for advanced optoelectric technologies. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol–gel method. The initial sols were prepared from anhydrous ethanol solutions of indium nitrate ( In ( NO 3)3·1 H 2 O ) and tin chloride ( SnCl 4), with different In:Sn ratios. The sols were dip-coated on the substrates and were subjected to annealing at different temperatures. Depending on compositions, the electrical resistivity of ITO coating varied from 1.4×103Ω/□ to 3.5×103Ω/□, and the minimum value for the electric resistivity was observed for the films containing 8% Sn by weight. Increasing heat treatment-temperatures from 400 to 600°C led to increase in conductivity by one order of magnitude. The optical transmittance of 550°C-annealed ITO films was more than 90% in the visible region. The morphology of the ITO films was examined by scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The rms-roughness of 350 nm thick ITO film was 1.5 nm. Increasing film thickness resulted in decrease in both, surface roughness and electrical resistivity. The correlations among the film properties and the film preparation conditions are discussed in detail.

scholarly journals Fabrication and Characterization of Indium Tin Oxide Films

2017 ◽  
Vol 15 (2) ◽  
pp. 170-175 ◽  
Author(s):  
Shiuh-Chuan Her ◽  
Chun-Fu Chang
Keyword(s):  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Wavelength Region ◽  
Hall Effect Measurement ◽  
Optical Transmittance ◽  
Preparation Temperature ◽  
Different Temperatures ◽  
Ito Films

Background Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding of the effects of preparation temperature on indium tin oxide (ITO) films, to improve their performance for optoelectronic applications. Methods ITO films were deposited on glass substrate at different temperatures, using direct current (DC) magnetron sputtering. The influence of substrate temperature on the microstructure and electrical and optical properties was studied. The surface topography and microstructure of the films were analyzed by atomic force microscopy. The electrical resistivity and optical transmittance of the films were measured using the Hall effect measurement and spectrometer, respectively. Results The results showed that both the surface roughness and film thickness increased as the substrate temperature increased. Transmittance increased from 78% to 80% in the visible wavelength region, while resistivity decreased from 6.05 × 10−4 to 3.27 × 10−4 Ω-cm as the substrate temperature increased from 25°C to 275°C. Conclusions High-quality ITO films with low resistivity and high transmittance can be achieved by increasing the deposition temperature.

Sign in / Sign up

Export Citation Format

Share Document