Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

2013 ◽  
Vol 13 (5) ◽  
pp. 492-499 ◽  
Author(s):  
M. Siva Pratap Reddy ◽  
Mi-Kyung Kwon ◽  
Hee-Sung Kang ◽  
Dong-Seok Kim ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Series Resistance ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Electrical Characteristics ◽  
Schottky Structure

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

scholarly journals Comprehension of Postmetallization Annealed MOCVD-TiO2on(NH4)2STreated III-V Semiconductors

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Ming-Kwei Lee ◽  
Chih-Feng Yen
Keyword(s):  
Dielectric Constant ◽  
Valence Band ◽  
Leakage Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Current Densities

The electrical characteristics of TiO2films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied. With (NH4)2S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2films. For postmetallization annealed TiO2on (NH4)2S treated InP MOS, the leakage current densities can reach2.7×10−7and2.3×10−7 A/cm2at±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and1.96×1012 C/cm2, respectively. The interface state density is7.13×1011 cm−2eV−1at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2on (NH4)2S treated GaAs MOS, The leakage current densities can reach9.7×10−8and1.4×10−7at±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and1.86×1012 C/cm2, respectively. The interface state density is5.96×1011 cm−2eV−1at the energy of 0.7 eV from the edge of valence band.

Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing

1985 ◽  
Vol 53 ◽  
Author(s):  
Julia M. Phillips ◽  
Mary L. Manger ◽  
Loren Pfeiffer ◽  
D. C. Joy ◽  
T. P. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Crack Formation ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Annealing Procedure

ABSTRACTRapid thermal annealing (RTA) has been shown to be a useful technique for improving the epitaxial quality of CaF2 films grown on Si(100) by molecular beam epitaxy. We have modified the annealing procedure to prevent crack formation, while still maintaining high film quality. Our work also shows RTA to be useful for improving the crystalline quality, chemical stability, and electrical characteristics of CaF2 films grown on Si(111). After RTA, the crystallinity of CaF2 films on Si(111), as measured by electron channeling, is indistinguishable from bulk single crystal CaF2, and the interface state density is reduced by nearly two orders of magnitude from that found in as-grown films.

Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering

2018 ◽  
Vol 18 (3) ◽  
pp. 1841-1846 ◽  
Author(s):  
Phongsaphak Sittimart ◽  
Asanlaya Duangrawa ◽  
Peeradon Onsee ◽  
Sakmongkon Teakchaicum ◽  
Adison Nopparuchikun ◽  
...  
Keyword(s):  
Direct Current ◽  
Series Resistance ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
P Type ◽  
Direct Current Sputtering

Current-Voltage Measurements on Indium Phosphide Schottky Diodes

2009 ◽  
Vol 283-286 ◽  
pp. 577-582 ◽  
Author(s):  
César A.C. Sequeira ◽  
Diogo M.F. Santos
Keyword(s):  
Indium Phosphide ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Fast Method ◽  
Forward Voltage ◽  
Continuous Increase ◽  
Current Voltage

In this paper, current-voltage (i-Vg) results from different kinds of n-type InP Schottky diodes are reported. The diodes were fabricated on an unintentionally doped n-type (100) indium phosphide substrate, and the i-Vg characteristics were measured in the temperature range 100 300 K. For the ideality factor, n always exhibited a small (1) but continuous increase with the voltage. At higher forward voltage, slightly higher values of n were due to series resistance effect; in other words, the interface state density always remained small. However, it was possible to obtain some information in the case of discrete interface traps. It was shown that i-Vg measurements can be used as a fast method to determine the densities of the interface states when they equilibrate with the semiconductor.

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

Sign in / Sign up

Export Citation Format

Share Document