First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications

2017 ◽  
Vol 17 (5) ◽  
pp. 675-684
Author(s):  
Yongbeom Cho ◽  
Seongjae Cho ◽  
Byung-Gook Park ◽  
James S. Harris
Keyword(s):  
Electrical Characterization ◽  
Group Iv ◽  
First Principle ◽  
Device Applications

Structural, optical and electrical characterization of nanocrystalline CdO films for device applications

Optik ◽  
2016 ◽  
Vol 127 (10) ◽  
pp. 4254-4257 ◽  
Author(s):  
Vipin Kumar ◽  
D.K. Sharma ◽  
Kapil K. Sharma ◽  
Sonalika Agrawal ◽  
M.K. Bansal ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Device Applications ◽  
Cdo Films

Omvpe Growth and Characterization of GaAs on Si for Device Applications

1988 ◽  
Vol 116 ◽  
Author(s):  
S. K. Shastry ◽  
S. Zemon ◽  
C. Armiento ◽  
M. B. Stern ◽  
M. Levinson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Spectral Width ◽  
Growth Technique ◽  
Temperature Growth ◽  
Vanadium Doping ◽  
Device Applications ◽  
First Time ◽  
Made In

AbstractSignificant progress has been made in the OMVPE growth of GaAs directly on Si by the previously reported low-temperature growth technique. These films have been characterized by low-temperature PL, SIMS, TEM, and DLTS. The epitaxial layers, whose quality has been determined by PL measurements (4.2 K PL spectral width of heavy-hole exciton ≈ 3 meV), were implanted with 29Si+ for fabrication of MESFET channels. Background concentrations of ≈ 1014 cm−3 have been achieved for the first time after rapid thermal annealing without the need to use oxygen implantation or vanadium doping. SIMS measurements do not show Si pileup on the surface or much Si diffusion at the GaAs-Si interface, a significant improvement over earlier results. DLTS measurements and electrical characterization of the GaAs-Si heterojunction diode indicate the presence of only two trap levels (< 1014 cm−3 in concentration) in the GaAs ≥ 2.5 μm away from the interface.

scholarly journals Electrical Characterization of Engineering Materials

1996 ◽  
Vol 19 (3) ◽  
pp. 139-169 ◽  
Author(s):  
Mohammad A. Alim
Keyword(s):  
Electrical Characterization ◽  
Structure Property ◽  
Electrical Parameters ◽  
Engineering Material ◽  
Novel Device ◽  
Microstructural Inhomogeneity ◽  
Device Applications ◽  
Geometrical Factors ◽  
Multi Phase

Engineering material systems for smart components and novel device applications require a thorough understanding on the structure-property-processing relationships to optimize their performance. The factors determining performance characteristics of the multi-phase/component heterogeneous polycrystalline hybrid (MPCHPH) systems are not identical to devices based on single-crystal/single-junction (SCSJ) technology. Performing SCSJ-like data-analysis on the MPCHPH systems can lead to confusion in delineating simultaneously operative phenomena when “physical geometrical factors”are used in normalizing the as-measuredelectrical parametersorelectrical quantities. Such an analytical approach can vitiate interpretation when microstructural inhomogeneity plays a key role in determining the electrical path. The advantage of using the as-measuredelectrical parametersorelectrical quantitiesconstituting the “immittance function” is emphasized. The “state of normalization” usingphysical geometrical factorscan only be executed for a specific phenomenon when isolated from the total electrical behavior.

Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

2003 ◽  
Vol 102 (1-3) ◽  
pp. 298-303 ◽  
Author(s):  
L. Scaltrito ◽  
S. Porro ◽  
M. Cocuzza ◽  
F. Giorgis ◽  
C.F. Pirri ◽  
...  
Keyword(s):  
Electronic Device ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Device Applications

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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