scholarly journals Surface Modification of Steel Foils by Depositing Cr/Al or Al/Cr Thin Films: Effect of Rapid Heat Treatment

2021 ◽  
Vol 30 (5) ◽  
pp. 146-151
Author(s):  
Hayk Khachatryan ◽  
Kyoung-Bo Kim ◽  
Moojin Kim
Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


2000 ◽  
Vol 629 ◽  
Author(s):  
John V. St. John ◽  
Patty Wisian-Neilson

ABSTRACTPoly (methylphenylphosphazene) (PMPP) is an example of a unique class of inorganic polymers with alternating – (P=N)– backbones. Chemical modification of bulk PMPP can result in changes of physical properties such as chemical resistance, onset temperature of thermal degradation, elasticity, and flexibility. Surface modification of PMPP allows tailoring of the chemical properties at the polymer interface while maintaining the integrity of the bulk polymer. In this research, PMPP thin films were treated to form carboxylate or carboxylic acid groups at the surface. Surface modification was monitored by following changes in contact angle. The hydrophobic/hydrophilic interactions of carboxylated PMPP surfaces allow for mesoscale interactions of thin polymer films.


1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).


2014 ◽  
Vol 1666 ◽  
Author(s):  
Tomohiko Nakamura ◽  
Shinya Yoshidomi ◽  
Masahiko Hasumi ◽  
Toshiyuki Sameshima ◽  
Tomohisa Mizuno

ABSTRACTWe report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.


2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.


2008 ◽  
Vol 40 (3-4) ◽  
pp. 400-403 ◽  
Author(s):  
E. Sarantopoulou ◽  
J. Kovač ◽  
Z. Kollia ◽  
I. Raptis ◽  
S. Kobe ◽  
...  

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