Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.

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Semiconductor Heteroepitaxy

Crystals ◽

10.3390/cryst11030229 ◽

2021 ◽

Vol 11 (3) ◽

pp. 229

Author(s):

Roberto Bergamaschini ◽

Elisa Vitiello

Keyword(s):

High Performance ◽

Next Generation ◽

High Quality

The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of high-quality materials and complex designs [...]

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New Developments in the Field of High Performance Turbo Molecular Pumps for the Production of Oil-Free High and Ultra High Vacuum

Japanese Journal of Applied Physics ◽

10.7567/jjaps.2s1.5 ◽

1974 ◽

Vol 13 (S1) ◽

pp. 5

Author(s):

Jörgen Henning

Keyword(s):

High Performance ◽

High Vacuum ◽

Ultra High Vacuum ◽

New Developments

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Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/16/10/018 ◽

1999 ◽

Vol 16 (10) ◽

pp. 750-752 ◽

Cited By ~ 1

Author(s):

Zhen Qi ◽

Jing-yun Huang ◽

Zhi-zhen Ye ◽

Huan-ming Lu ◽

Wei-hua Chen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

High Quality

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Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research -

MRS Proceedings ◽

10.1557/proc-639-g8.1 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 2

Author(s):

Isamu Akasaki

Keyword(s):

High Speed ◽

High Performance ◽

Green Light ◽

Blue Laser ◽

Personal History ◽

Nitride Semiconductors ◽

Quarter Century ◽

Group Iii ◽

History Of ◽

Group Iii Nitride

ABSTRACTWide bandgap group-III nitride semiconductors are currently experiencing the most exciting development. High brightness blue and green light emitting diodes (LEDs) are commercialized, and UV and blue laser diodes (LDs), high-speed transistors (TRs) and UV photodetectors (PDs) with low dark current, which will be able to operate in harsh environments, have been demonstrated. In this paper, renaissance and progress in crystal growth and conductivity control of nitride semiconductors in the last quarter century are reviewed as the groundwork for all of those high-performance devices. My personal history of nitride research will be also introduced.

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High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

MRS Proceedings ◽

10.1557/proc-95-311 ◽

1987 ◽

Vol 95 ◽

Cited By ~ 5

Author(s):

Shinya Tsuda ◽

Hisao Haku ◽

Hisaki Tarui ◽

Takao Matsuyama ◽

Katsunobu Sayama ◽

...

Keyword(s):

Conversion Efficiency ◽

Photovoltaic Effect ◽

High Vacuum ◽

Reaction Chamber ◽

Wide Bandgap ◽

Ultra High Vacuum ◽

High Quality ◽

Cvd Method ◽

Superlattice Structure ◽

Si Films

AbstractIn order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

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Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

MRS Proceedings ◽

10.1557/proc-557-61 ◽

1999 ◽

Vol 557 ◽

Author(s):

M. Scholz ◽

D. Peros ◽

M. Böhm

Keyword(s):

High Vacuum ◽

Chemical Vapor ◽

Transparent Conductive Oxide ◽

Rf Magnetron Sputtering ◽

Film Deposition ◽

Ultra High Vacuum ◽

Molecular Flow ◽

Metal Contacts ◽

High Quality ◽

First Results

AbstractThis work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

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One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

Electronic Materials ◽

10.3390/electronicmat2040033 ◽

2021 ◽

Vol 2 (4) ◽

pp. 482-494

Author(s):

Jignesh Vanjaria ◽

Venkat Hariharan ◽

Arul Chakkaravarthi Arjunan ◽

Yanze Wu ◽

Gary S. Tompa ◽

...

Keyword(s):

Film Growth ◽

High Vacuum ◽

Chemical Vapor ◽

Cost Effective ◽

Single Step ◽

Film Deposition ◽

Ultra High Vacuum ◽

Ex Situ ◽

High Quality ◽

X Ray

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

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A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

MRS Proceedings ◽

10.1557/proc-1068-c07-03 ◽

2008 ◽

Vol 1068 ◽

Author(s):

Mustafa Jamil ◽

Joseph P Donnelly ◽

Se-Hoon Lee ◽

Davood Shahrjerdi ◽

Tarik Akyol ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Compressive Strain ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

High Electron ◽

High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

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Columnar Epitaxy of Hexagonal and Orthorhombic Silicides on Si(111)

MRS Proceedings ◽

10.1557/proc-198-583 ◽

1990 ◽

Vol 198 ◽

Author(s):

R.W. Fathauer ◽

C.W. Nieh ◽

Q.F. Xiao ◽

Shin Hashimoto

Keyword(s):

High Vacuum ◽

Ultra High Vacuum ◽

Epitaxial Silicon ◽

High Quality ◽

Columnar Grains ◽

Lattice Matched

ABSTRACTColumnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultra-high vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840°C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si<110>.

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