scholarly journals Physicochemical Approaches for Thin Film Energy Storage Devices through PVD Techniques

2021 ◽  
Author(s):  
Ramasamy Velmurugan ◽  
Balasubramanian Subramanian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Energy Storage ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Atmospheric Condition ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
High Specific Power ◽  
The One

For the fabrication of thin films, Physical Vapor Deposition (PVD) techniques specified greater contribution than all other deposition techniques. Laser Ablation or Pulsed Laser deposition (PLD) technique is the one of most promising techniques for the fabrication of thin films among all other physical vapor deposition. In particular, flexible thin-film energy storage fabrication PLD plays an important role due to its special parameters such as fine thickness control, partial pressure atmospheric condition, pulsed repetition rate, in-situ annealing and microstructure optimization. Very recently, thin film supercapbatteries have been broadly studied, in which the battery and supercapacitor based electrodes are combined to obtain a high specific power and specific energy density and extended cycle stability. In order to fabricate thin film supercapbatteries, electrodes that have a large potential window, high capacitance, and capacity performance are vastly desired. Thus, the presented chapter represents an important enhancement in the growth of economical and eco-friendly thin flexible supercapbatteries and confirms their potential in sensible applications such as transport electronics devices and other gadgets.

scholarly journals Fabrication of Copper/Copper-Nickel thin-film thermoelectric generators with energy storage devices

2018 ◽  
Vol 1052 ◽  
pp. 012032 ◽  
Author(s):  
Y Shimizu ◽  
M Mizoshiri ◽  
M Mikami ◽  
J Sakurai ◽  
S hata
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Thermoelectric Generators ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Copper Nickel

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

Application of sputtered ruthenium nitride thin films as electrode material for energy-storage devices

2013 ◽  
Vol 68 (9) ◽  
pp. 659-662 ◽  
Author(s):  
S. Bouhtiyya ◽  
R. Lucio Porto ◽  
B. Laïk ◽  
P. Boulet ◽  
F. Capon ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Electrode Material ◽  
Energy Storage Devices ◽  
Storage Devices

Hierarchical core/shell Janus-type α-Fe2O3/PEDOT nanoparticles for high performance flexible energy storage devices

2016 ◽  
Vol 4 (21) ◽  
pp. 8263-8271 ◽  
Author(s):  
Jin Wook Park ◽  
Wonjoo Na ◽  
Jyongsik Jang
Keyword(s):  
Energy Storage ◽  
Vapor Deposition ◽  
High Performance ◽  
Hybrid Nanoparticles ◽  
Core Shell ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Liquid Diffusion ◽  
New Class

A new class of hierarchical α-Fe2O3/poly(3,4-ethylenedioxythiophene) (PEDOT) core/shell Janus-type hybrid nanoparticles (HNPs) was successfully synthesized using sonochemical, liquid–liquid diffusion-assisted crystallization, and vapor deposition polymerization methods.

scholarly journals Fabrication of Nanostructured Cadmium Selenide Thin Films for Optoelectronics Applications

2021 ◽  
Vol 9 ◽  
Author(s):  
Shahnwaz Hussain ◽  
Mazhar Iqbal ◽  
Ayaz Arif Khan ◽  
Muhammad Nasir Khan ◽  
Ghazanfar Mehboob ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Solar Energy ◽  
Electrochemical Energy Storage ◽  
Bandgap Energy ◽  
Energy Storage Devices ◽  
Small Shift ◽  
Storage Devices ◽  
Vis Spectroscopy ◽  
Electrochemical Energy

There is lot of research work at enhancing the performance of energy conversion and energy storage devices such as solar cells, supercapacitors, and batteries. In this regard, the low bandgap and a high absorption coefficient of CdSe thin films in the visible region, as well as, the low electrical resistivity make them ideal for the next generation of chalcogenide-based photovoltaic and electrochemical energy storage devices. Here, we present the properties of CdSe thin films synthesized at temperatures (below 100°C using readily available precursors) that are reproducible, efficient and economical. The samples were characterized using XRD, FTIR, RBS, UV-vis spectroscopy. Annealed samples showed crystalline cubic structure along (111) preferential direction with the grain size of the nanostructures increasing from 2.23 to 4.13 nm with increasing annealing temperatures. The optical properties of the samples indicate a small shift in the bandgap energy, from 2.20 to 2.12 eV with a decreasing deposition temperature. The band gap is suitably located in the visible solar energy region, which make these CdSe thin films ideal for solar energy harvesting. It also has potential to be used in electrochemical energy storage applications.

scholarly journals Synthesis of T-Nb2O5 thin-films deposited by Atomic Layer Deposition for miniaturized electrochemical energy storage devices

2019 ◽  
Vol 16 ◽  
pp. 581-588 ◽  
Author(s):  
Saliha Ouendi ◽  
Cassandra Arico ◽  
Florent Blanchard ◽  
Jean-Louis Codron ◽  
Xavier Wallart ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrochemical Energy Storage ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Layer Deposition ◽  
Electrochemical Energy

scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices

2019 ◽  
Vol 11 (46) ◽  
pp. 43608-43621 ◽  
Author(s):  
Mohd Zahid Ansari ◽  
Dip K. Nandi ◽  
Petr Janicek ◽  
Sajid Ali Ansari ◽  
Rahul Ramesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Layer Deposition ◽  
Tin Nitride

scholarly journals Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Direct Contact ◽  
Physical Vapor Deposition ◽  
Metal Films ◽  
Surface Alloying ◽  
X Ray ◽  
Physical Vapor Deposition Method

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

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