STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY
2016 ◽
Vol 24
(04)
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pp. 1750048
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Keyword(s):
Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.
2017 ◽
Vol 57
(1)
◽
pp. 011501
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2011 ◽
Vol 29
(1)
◽
pp. 01AD03
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Keyword(s):
2018 ◽
Vol 51
(22)
◽
pp. 225102
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2020 ◽
Vol 826
◽
pp. 154126
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