Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics

2015 ◽  
Vol 8 (3) ◽  
pp. 034101 ◽  
Author(s):  
Szu-Ping Tsai ◽  
Heng-Tung Hsu ◽  
Yung-Yi Tu ◽  
Edward Yi Chang
Keyword(s):  
Thermal Properties ◽  
Power Electronics ◽  
Electron Mobility ◽  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1599 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Special Focus ◽  
High Electron ◽  
High Electron Mobility ◽  
Advantages And Disadvantages ◽  
Electron Mobility Transistors

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

scholarly journals Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates

2014 ◽  
Vol 211 (12) ◽  
pp. 2844-2847 ◽  
Author(s):  
Nicole Killat ◽  
James W. Pomeroy ◽  
Jose L. Jimenez ◽  
Martin Kuball
Keyword(s):  
Thermal Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics

Electronics ◽  
2022 ◽  
Vol 11 (2) ◽  
pp. 225
Author(s):  
A. Revathy ◽  
C. S. Boopathi ◽  
Osamah Ibrahim Khalaf ◽  
Carlos Andrés Tavera Romero
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Lattice Mismatch ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Wide Bandgap ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dc Characteristics

The wider bandgap AlGaN (Eg > 3.4 eV) channel-based high electron mobility transistors (HEMTs) are more effective for high voltage operation. High critical electric field and high saturation velocity are the major advantages of AlGaN channel HEMTs, which push the power electronics to a greater operating regime. In this article, we present the DC characteristics of 0.8 µm gate length (LG) and 1 µm gate-drain distance (LGD) AlGaN channel-based high electron mobility transistors (HEMTs) on ultra-wide bandgap β-Ga2O3 Substrate. The β-Ga2O3 substrate is cost-effective, available in large wafer size and has low lattice mismatch (0 to 2.4%) with AlGaN alloys compared to conventional SiC and Si substrates. A physics-based numerical simulation was performed to investigate the DC characteristics of the HEMTs. The proposed HEMT exhibits sheet charge density (ns) of 1.05 × 1013 cm−2, a peak on-state drain current (IDS) of 1.35 A/mm, DC transconductance (gm) of 277 mS/mm. The ultra-wide bandgap AlGaN channel HEMT on β-Ga2O3 substrate with conventional rectangular gate structure showed 244 V off-state breakdown voltage (VBR) and field plate gate device showed 350 V. The AlGaN channel HEMTs on β-Ga2O3 substrate showed an excellent performance in ION/IOFF and VBR. The high performance of the proposed HEMTs on β-Ga2O3 substrate is suitable for future portable power converters, automotive, and avionics applications.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

2015 ◽  
Vol 107 (19) ◽  
pp. 193506 ◽  
Author(s):  
M. Ťapajna ◽  
O. Hilt ◽  
E. Bahat-Treidel ◽  
J. Würfl ◽  
J. Kuzmík
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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