scholarly journals Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p–i–n junction-type back-gate structure

2016 ◽  
Vol 9 (2) ◽  
pp. 023103 ◽  
Author(s):  
Takumi Miyakawa ◽  
Takafumi Akiho ◽  
Yuya Ebina ◽  
Masafumi Yamamoto ◽  
Tetsuya Uemura
Keyword(s):  
Spin Valve ◽  
Back Gate ◽  
Gate Structure ◽  
Gate Control ◽  
Junction Type

Multi-Back-Gate Control of Carbon Nanotube Double-Quantum Dot

2009 ◽  
Vol 48 (4) ◽  
pp. 04C201 ◽  
Author(s):  
Hideyuki Maki ◽  
Tomoyuki Mizuno ◽  
Satoru Suzuki ◽  
Tetsuya Sato ◽  
Yoshihiro Kobayashi
Keyword(s):  
Carbon Nanotube ◽  
Quantum Dot ◽  
Double Quantum ◽  
Back Gate ◽  
Double Quantum Dot ◽  
Gate Control

scholarly journals Unsupervised Quantum Gate Control for Gate-Model Quantum Computers

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Laszlo Gyongyosi
Keyword(s):  
Quantum Gate ◽  
Quantum Gates ◽  
Quantum Computers ◽  
Machine Learning Method ◽  
Learning Method ◽  
Working Mechanism ◽  
Gate Structure ◽  
Gate Control ◽  
Stable Quantum ◽  
Near Term

Abstract In near-term quantum computers, the operations are realized by unitary quantum gates. The precise and stable working mechanism of quantum gates is essential for the implementation of any complex quantum computations. Here, we define a method for the unsupervised control of quantum gates in near-term quantum computers. We model a scenario in which a tensor product structure of non-stable quantum gates is not controllable in terms of control theory. We prove that the non-stable quantum gate becomes controllable via a machine learning method if the quantum gates formulate an entangled gate structure.

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

AlGaN/GaN HEMTs with 2DHG Back Gate Control

MRS Advances ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 137-141 ◽  
Author(s):  
Wei-Tse Lin ◽  
Wen-Chia Liao ◽  
Yi-Nan Zhong ◽  
Yue-ming Hsin
Keyword(s):  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Back Gate ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Gate Control ◽  
Dimensional Electron Gas

ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

Read sensitivity in abutted-junction type spin-valve head

1998 ◽  
Vol 34 (4) ◽  
pp. 1516-1518 ◽  
Author(s):  
K. Takano ◽  
N. Yamanaka ◽  
M. Matsuzaki
Keyword(s):  
Spin Valve ◽  
Junction Type
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