Multi-Gate MOSFETs with Back-Gate Control

2006 ◽  
Author(s):  
T. Hiramoto ◽  
T. Nagumo
Keyword(s):  
Back Gate ◽  
Gate Control

Multi-Back-Gate Control of Carbon Nanotube Double-Quantum Dot

2009 ◽  
Vol 48 (4) ◽  
pp. 04C201 ◽  
Author(s):  
Hideyuki Maki ◽  
Tomoyuki Mizuno ◽  
Satoru Suzuki ◽  
Tetsuya Sato ◽  
Yoshihiro Kobayashi
Keyword(s):  
Carbon Nanotube ◽  
Quantum Dot ◽  
Double Quantum ◽  
Back Gate ◽  
Double Quantum Dot ◽  
Gate Control

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

AlGaN/GaN HEMTs with 2DHG Back Gate Control

MRS Advances ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 137-141 ◽  
Author(s):  
Wei-Tse Lin ◽  
Wen-Chia Liao ◽  
Yi-Nan Zhong ◽  
Yue-ming Hsin
Keyword(s):  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Back Gate ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Gate Control ◽  
Dimensional Electron Gas

ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

scholarly journals Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p–i–n junction-type back-gate structure

2016 ◽  
Vol 9 (2) ◽  
pp. 023103 ◽  
Author(s):  
Takumi Miyakawa ◽  
Takafumi Akiho ◽  
Yuya Ebina ◽  
Masafumi Yamamoto ◽  
Tetsuya Uemura
Keyword(s):  
Spin Valve ◽  
Back Gate ◽  
Gate Structure ◽  
Gate Control ◽  
Junction Type

A 28–34 GHz Stacked-FET Power Amplifier in 28-nm FD-SOI with Adaptive Back-gate Control for Improving Linearity

2021 ◽  
pp. 1-1
Author(s):  
Kyunghwan Kim ◽  
Kangseop Lee ◽  
Sungmin Cho ◽  
Gibeom Shin ◽  
Ho-Jin Song
Keyword(s):  
Power Amplifier ◽  
Back Gate ◽  
Gate Control ◽  
28 Nm

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

2014 ◽  
Vol 61 (4) ◽  
pp. 969-975 ◽  
Author(s):  
Nikolaos Fasarakis ◽  
Theano Karatsori ◽  
Dimitrios H. Tassis ◽  
Christoforos G. Theodorou ◽  
Francois Andrieu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Ideality Factor ◽  
Analytical Modeling ◽  
Back Gate ◽  
Buried Oxide ◽  
Gate Control
Sign in / Sign up

Export Citation Format

Share Document