Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane

2011 ◽  
Vol 50 (1R) ◽  
pp. 010203 ◽  
Author(s):  
Eiji Saito ◽  
Sergey N. Filimonov ◽  
Maki Suemitsu
2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.


1995 ◽  
Vol 10 (2) ◽  
pp. 320-327 ◽  
Author(s):  
R.A. Levy ◽  
E. Mastromatteo ◽  
J.M. Grow ◽  
V. Paturi ◽  
W.P. Kuo ◽  
...  

In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3 is present, the growth rate was observed to follow an Arrhenius behavior in the temperature range of 600 to 800 °C with an apparent activation energy of 11 kcal/mol. A linear dependence of growth rate is observed as a function of square root of flow rate for the TEAB range of 20 to 60 sccm, indicating that the reaction rate is controlled by the adsorption of borane. The addition of NH3 to TEAB had the effect of lowering the deposition temperature down to 300 °C and increasing the apparent activation energy to 22 kcal/mol. Above 650 °C, the carbon concentration of the deposits increased significantly, reflecting the breakup of the amine molecule. X-ray diffraction measurements indicated the films to be in all cases amorphous. Infrared spectra of the films showed absorption peaks representing the vibrational modes of B-N, B-N-B, B-H, and N-H. The index of refraction varied between 1.76 and 2.47, depending on composition of the films. Films deposited with no NH3 above 700 °C were seen to be compressive while films below that temperature were tensile. In the range of 350 to 475 °C, the addition of NH3 to TEAB resulted in films that were mildly tensile, while below 325 °C and above 550 °C, the films were found to be compressive. Both the hardness and Young's modulus of the films decreased with higher temperatures, reflecting the influence of the carbon presence.


2000 ◽  
Vol 609 ◽  
Author(s):  
Hong-Seung Kim ◽  
Kyu-Hwan Shim ◽  
Jeong-Yong Lee ◽  
Jin-Yeong Kang

ABSTRACTThis paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H2 gas system. In addition, an HCl etching process is introduced and the conditions of the deposition and etching processes are addressed to sustain the selectivity. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO2. In these experiments it has been also observed that the Si layer was grown to 3 nm while sustaining the selectivity. Moreover, further introduction of the HCl etching process following the deposition allowed a 50 nm-thick film to sustain the selectivity for twenty periods.


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