Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
2011 ◽
Vol 50
(1R)
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pp. 010203
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Keyword(s):
2012 ◽
Vol 717-720
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pp. 105-108
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1995 ◽
Vol 10
(2)
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pp. 320-327
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2020 ◽
Vol 16
(4)
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pp. 385-395
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Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
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pp. 485-490
◽
1993 ◽
Vol 140
(9)
◽
pp. 2703-2709
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Keyword(s):
Keyword(s):
Keyword(s):
1997 ◽
Vol 15
(6)
◽
pp. 1902
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Keyword(s):
1990 ◽
Vol 137
(5)
◽
pp. 1623-1626
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