An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FE05
Author(s):  
Chen Liu ◽  
Runze Han ◽  
Zheng Zhou ◽  
Peng Huang ◽  
Lifeng Liu ◽  
...  
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

The Recent Progress of Research on Resistive Random Access Memory

2013 ◽  
Vol 685 ◽  
pp. 372-377 ◽  
Author(s):  
Wen Wen Qiu ◽  
Hong Deng ◽  
Mi Li ◽  
Min Wei ◽  
Xue Ran Deng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Recent Progress ◽  
Simple Structure ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Low Power Consumption ◽  
Access Memory ◽  
New Type

Resistive random access memory (RRAM) has attracted comprehensive attention from academia and industry as a new-type of nonvolatile memory. This memory has many advantages, such as high-speed, low power consumption, simple structure, high-density integration, etc. Therefore, it has a strong potential to replace DRAM. This paper summarizes the recent progress of the studies on RRAM. Although the achievement obtained has been summarized, there is still a long way from the real application. We also discuss the principle and related properties of RRAM and forecast the preparation trends of RRAM

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer

2020 ◽  
Vol 128 (21) ◽  
pp. 215702
Author(s):  
Yuehua Dai ◽  
Jianhua Gao ◽  
Lihua Huang ◽  
Renjie Ding ◽  
Peng Wang ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Single Layer ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Layer ◽  
First Principles Study ◽  
Black Phosphorous
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