drop composition
Recently Published Documents


TOTAL DOCUMENTS

5
(FIVE YEARS 1)

H-INDEX

3
(FIVE YEARS 1)

2020 ◽  
Vol 10 (3) ◽  
pp. 942 ◽  
Author(s):  
Anastasia Demidovich ◽  
Svetlana Kropotova ◽  
Maxim Piskunov ◽  
Nikita Shlegel ◽  
Olga Vysokomornaya

This paper presents the experimental research into the impingement of single- and multicomponent liquid drops on a solid wall. We focus on studying the conditions and characteristics of two impact scenarios: rebound and breakup. We performed a comprehensive analysis of the effect of a group of factors on the drop transformation and fragmentation characteristics. These factors include the drop velocity and size, Weber number, impinging angle, wall temperature, thermophysical properties of the wall material, surface roughness, hydrophilic and hydrophobic behavior of the surface, homogeneity and inhomogeneity of the drop composition, as well as viscosity and surface tension of the liquid. We compared the outcomes of one, two, and three drops with the same total volume on a wall. Histograms were plotted of the number and size distribution of the emerging secondary droplets. The results include the critical conditions for the intense breakup of drops. Such factors as wall heating, its roughness, impinging angle, drop size and velocity affected the breakup conditions most notably. The variation of a group of these factors could provide a 2–25-fold increase in the liquid surface area as a result of the impact.


2017 ◽  
Vol 833 ◽  
pp. 54-69 ◽  
Author(s):  
Shantanu Maheshwari ◽  
Martin van der Hoef ◽  
Andrea Prosperetti ◽  
Detlef Lohse

The dissolution of a multicomponent nanodrop in a sparingly miscible liquid is studied by molecular dynamics (MD) simulations. We studied both binary and ternary systems, in which nanodroplets are formed from one and two components, respectively. Whereas for a single-component droplet the dissolution can easily be calculated, the situation is more complicated for a multicomponent drop, as the interface concentrations of the drop constituents depend on the drop composition, which changes with time. In this study, the variation of the interface concentration with the drop composition is determined from independent ‘numerical experiments’, which are then used in the theoretical model for the dissolution dynamics of a multicomponent drop. The MD simulations reveal that when the interaction strengths between the drop constituents and the surrounding bulk liquid are significantly different, the concentration of the more soluble component near the drop interface may become larger than in the drop bulk. This effect is the larger the smaller the drop radius. While the present study is limited to binary and ternary systems, the same method can be easily extended to a larger number of components.


2012 ◽  
Vol 84 (12) ◽  
pp. 2619-2628 ◽  
Author(s):  
Nataliya L. Shwartz ◽  
Alla G. Nastovjak ◽  
Igor G. Neizvestny

The process of axial and radial Si–Ge heterostructure formation during nanowire growth by vapor–liquid–solid (VLS) mechanism was studied using Monte Carlo (MC) simulation. It was demonstrated that radial growth can be stimulated by adding chemical species that decrease the activation energy of precursor dissociation or the solubility of semiconductor material in catalyst drop. Reducing the Si adatom diffusion length also leads to Si shell formation around the Ge core. The influence of growth conditions on the composition and abruptness of axial Ge–Si heterostructures was analyzed. The composition of the GexSi1–x axial heterojunction (HJ) was found to be dependent on the flux ratio, the duration of Si and Ge deposition, and the catalyst drop diameter. Maximal Ge concentration in the HJ is dependent on Ge deposition time owing to gradual changing of catalyst drop composition after switching Ge and Si fluxes. The dependence of junction abruptness on the nanowire diameter was revealed: in the adsorption-induced growth mode, the abruptness decreased with diameter, and in the diffusion-induced mode it increased. This implies that abrupt Ge–Si HJ in nanowires with small diameter can be obtained only in the chemical vapor deposition (CVD) process with negligible diffusion component of growth.


Sign in / Sign up

Export Citation Format

Share Document