Abstract
The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.
Resistive Switching: Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)