Wide‐Range‐Tunable p‐Type Conductivity of Transparent CuI 1− x Br x Alloy

2020 ◽  
Vol 30 (34) ◽  
pp. 2003096 ◽  
Author(s):  
Naoomi Yamada ◽  
Yuta Tanida ◽  
Hidenobu Murata ◽  
Takahiro Kondo ◽  
Shougo Yoshida
Keyword(s):  
Type Conductivity ◽  
Wide Range ◽  
P Type

scholarly journals Strain gages based on gallium arsenide whiskers

2021 ◽  
Vol 1 (1) ◽  
pp. 128-133
Author(s):  
A. Druzhinin ◽  
◽  
O. Kutrakov ◽  
I. Ostrovskii ◽  
N. Liakh-Kaguy ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Strain Sensitivity ◽  
Strain Gages ◽  
Linear Deformation ◽  
Type Conductivity ◽  
Temperature Range ◽  
Wide Range ◽  
Heavily Doped ◽  
High Flexibility ◽  
P Type

Strain-resistant properties of GaAs whiskers and ribbons of p- and n-type conductivity with various length (0.3–7 mm) and diameter (10–40 μm) have been investigated in a wide range of temperatures. Strain gages based on heavily doped p-type conductivity GaAs whiskers have linear deformation characteristics and a weak temperature dependence of strain sensitivity in the temperature range from –20 to +3500 °C. The temperature coefficient of resistance (TСR) of not fixed strain gages is about +(0.12–0.16)% × grad–1. The temperature coefficient of strain sensitivity is –0.03 % × deg–1 in the temperature range –120+800 °C. Strain gages based on n-type GaAs ribbons are characterized by high flexibility and high strain sensitivity. They are capable up to +4000 °C and can be used to measure deformations on curved surfaces at high temperatures. TСR of not fixed strain gages is –0.01 +0.03 % × grad–1. The temperature coefficient of strain sensitivity is –0.16% × deg–1 in the temperature range –120 ... +4000 °С.

Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

2021 ◽  
Vol 118 (11) ◽  
pp. 112102
Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Step Process ◽  
Type Conductivity ◽  
P Type

scholarly journals Effect of Mn2+ substitution on the structure, properties and HER activity of cadmium phosphochlorides

RSC Advances ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 5134-5145
Author(s):  
Anand Roy ◽  
Anjali Singh ◽  
S. Assa Aravindh ◽  
Swaraj Servottam ◽  
Umesh V. Waghmare ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Structure Properties

Mn2+ prefers the Cd-sites having larger number of tightly bounded Cl-ligands. Pure Cd7P4Cl6 exhibits n-type conductivity whereas Cd5.8Mn1.2P4Cl6 exhibits p-type conductivity. The HER activity of Cd7−yMnyP4Cl6 is superior to that of pristine Cd7P4Cl6.

p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

2010 ◽  
Vol 97 (15) ◽  
pp. 153126 ◽  
Author(s):  
G. D. Yuan ◽  
T. W. Ng ◽  
Y. B. Zhou ◽  
F. Wang ◽  
W. J. Zhang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Silicon Nanowires ◽  
Type Conductivity ◽  
Interface Charge ◽  
P Type ◽  
Interface Charge Transfer

Preparation and Properties of CdTe Films on Mo/Glass Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vello Valdna ◽  
Maarja Grossberg ◽  
Hiie Jaan ◽  
Urve Kallavus ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Cadmium Chloride ◽  
Radiation Detectors ◽  
Cdte Film ◽  
Chloride Flux ◽  
Type Conductivity ◽  
Coated Glass ◽  
Glass Substrates ◽  
Group I ◽  
Cdte Films ◽  
P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

First-Principles Study on the Conductive Properties of P-Doped ZnO

2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Functional ◽  
Lattice Structure ◽  
Mulliken Charge ◽  
Total Density ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Conductive Properties

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.

p-Type conductivity of GeTe: The role of lone-pair electrons

2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga
Keyword(s):  
Lone Pair ◽  
Type Conductivity ◽  
P Type ◽  
Lone Pair Electrons

Interfacial defect engineering and Photocatalysis Properties of hBN/MX2(M = Mo, W, and X = S, Se) Heterostructures

2021 ◽  
Author(s):  
Zhihai Sun ◽  
Jiaxi Liu ◽  
Ying Zhang ◽  
Ziyuan Li ◽  
Leyu Peng ◽  
...  
Keyword(s):  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Band Alignment ◽  
Type I ◽  
Defect Engineering ◽  
Wide Range ◽  
Interfacial Defects ◽  
Significant Research ◽  
P Type ◽  
The Impact

Abstract Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential in a wide range of applications such as electronics, optoelectronic, and heterocatalysis. In this work, the impact of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX2(M = Mo, W, and X = S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX2 can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure was maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed to the type-II heterostructrue as VB defect and p-type doping was introduced in the hBN sublayer. This could be profitable for the separation of photo-generated electron−hole pairs at the interfaces and is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(BeB)/MoS2, hBN(BeB)/MoSe2, and hBN(VN)/MoSe2 were achieved, showing reducing band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX2 heterostructures via interfacial defects.

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