A study on electrical transport vis-à-vis the effect of thermal annealing on the p-type conductivity in arsenic-doped MOCVD grown ZnO in the temperature range 10–300K

2013 ◽  
Vol 552 ◽  
pp. 304-309 ◽  
Author(s):  
Pranab Biswas ◽  
Souvik Kundu ◽  
P. Banerji
Keyword(s):  
Thermal Annealing ◽  
Electrical Transport ◽  
Type Conductivity ◽  
Temperature Range ◽  
P Type

p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

2013 ◽  
Vol 363 ◽  
pp. 190-194 ◽  
Author(s):  
Seung-Hwan Park ◽  
Tsutomu Minegishi ◽  
Dong-Cheol Oh ◽  
Ji-Ho Chang ◽  
Takafumi Yao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Zno Films ◽  
Type Conductivity ◽  
P Type

Reversible p -type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

2017 ◽  
Vol 400 ◽  
pp. 312-317 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
E. Senthil Kumar ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films ◽  
Type Conductivity ◽  
P Type

Die elektrischen Transporteigenschaften von p- und n-Cd1-ϰ Znϰ Sb für 0≦ ϰ≦ 0,5 / The Electrical Transport Properties of p- and n-Cd1-ϰZnϰSb for 0≦ϰ≦0,5

1974 ◽  
Vol 29 (12) ◽  
pp. 1874-1889
Author(s):  
W. Lehnefinke
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Anomalous Behavior ◽  
Special Treatment ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Sign Change ◽  
Semiconducting Compounds ◽  
P Type ◽  
Type Conduction

The temperature dependence of electrical resistance, Hall coefficient, and thermoelectric power has been investigated in the temperature range from 10 K to room temperature. Undoped mixed crystals of the semiconducting compounds CdSb and ZnSb show p-type conduction in the whole temperature range. To get the n-type, samples of the composition Cd1-ϰZnϰSb with 0≦ϰ≦0,5 were doped with Se and Te. All Te-doped specimens show n-type conduction. In Se-doped samples n-conduction is achieved only for ϰ = 0 and ϰ = 0.1. Some of the doped samples change to p-type conduction at lower temperatures between 130 K and 210 k. In the region of the lowest measured temperatures a second sign change occurs to negative values again. A special treatment of the samples shows that this anomalous behavior is strongly affected by surface effects. By using a simple model for the structure of the samples these effects were explained.

scholarly journals Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Junseok Seo ◽  
Kyungjune Cho ◽  
Woocheol Lee ◽  
Jiwon Shin ◽  
Jae-Keun Kim ◽  
...  
Keyword(s):  
Response Time ◽  
Thermal Annealing ◽  
Gate Voltage ◽  
Field Effect ◽  
Radiative Recombination ◽  
Field Effect Transistors ◽  
Type Conductivity ◽  
X Ray ◽  
Response Characteristics ◽  
P Type

Abstract We investigated the electrical and optoelectronic characteristics of ambipolar WSe2 field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe2 surface, which ensured higher p-type conductivity and the shift of the transfer curve to the positive gate voltage direction. Besides, considerably improved photoswitching response characteristics of ambipolar WSe2 FETs were achieved by the annealing in ambient. To explore the origin of the changes in electrical and optoelectronic properties, the analyses via X-ray photoelectron, Raman, and photoluminescence spectroscopies were performed. From these analyses, it turned out that WO3 layers formed by the annealing in ambient introduced p-doping to ambipolar WSe2 FETs, and disorders originated from the WO3/WSe2 interfaces acted as non-radiative recombination sites, leading to significantly improved photoswitching response time characteristics.

scholarly journals Strain gages based on gallium arsenide whiskers

2021 ◽  
Vol 1 (1) ◽  
pp. 128-133
Author(s):  
A. Druzhinin ◽  
◽  
O. Kutrakov ◽  
I. Ostrovskii ◽  
N. Liakh-Kaguy ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Strain Sensitivity ◽  
Strain Gages ◽  
Linear Deformation ◽  
Type Conductivity ◽  
Temperature Range ◽  
Wide Range ◽  
Heavily Doped ◽  
High Flexibility ◽  
P Type

Strain-resistant properties of GaAs whiskers and ribbons of p- and n-type conductivity with various length (0.3–7 mm) and diameter (10–40 μm) have been investigated in a wide range of temperatures. Strain gages based on heavily doped p-type conductivity GaAs whiskers have linear deformation characteristics and a weak temperature dependence of strain sensitivity in the temperature range from –20 to +3500 °C. The temperature coefficient of resistance (TСR) of not fixed strain gages is about +(0.12–0.16)% × grad–1. The temperature coefficient of strain sensitivity is –0.03 % × deg–1 in the temperature range –120+800 °C. Strain gages based on n-type GaAs ribbons are characterized by high flexibility and high strain sensitivity. They are capable up to +4000 °C and can be used to measure deformations on curved surfaces at high temperatures. TСR of not fixed strain gages is –0.01 +0.03 % × grad–1. The temperature coefficient of strain sensitivity is –0.16% × deg–1 in the temperature range –120 ... +4000 °С.

scholarly journals Фотолюминесцентные исследования легированных кремнием эпитаксиальных пленок GaAs, выращенных на подложках GaAs с ориентациями (100) и (111)А при пониженных температурах

2018 ◽  
Vol 52 (3) ◽  
pp. 395
Author(s):  
Г.Б. Галиев ◽  
Е.А. Климов ◽  
А.Н. Клочков ◽  
С.С. Пушкарев ◽  
П.П. Мальцев
Keyword(s):  
Growth Temperature ◽  
Impurity Band ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
Type Conductivity ◽  
Temperature Range ◽  
Defect Complexes ◽  
Temperature Transformation ◽  
P Type ◽  
Growth Temperature Range

AbstractThe electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As_4 pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n -type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p -type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n - and p -type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V _As defects and Si_As– V _As defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V _As and V _Ga defect concentrations under variations in the growth temperature of the samples.

scholarly journals High Mobility Reactive Sputtered CuxO Thin Film for Highly Efficient and Stable Perovskite Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 389
Author(s):  
Mohammad Aminul Islam ◽  
Yasmin Abdu Wahab ◽  
Mayeen Uddin Khandaker ◽  
Abdullah Alsubaie ◽  
Abdulraheem SA Almalki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Measurement Techniques ◽  
Perovskite Solar Cells ◽  
High Mobility ◽  
Open Circuit ◽  
Optoelectronic Properties ◽  
Type Conductivity ◽  
Vis Spectroscopy ◽  
P Type

Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films’ crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films’ optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V.

p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

2016 ◽  
Vol 857 ◽  
pp. 131-135
Author(s):  
Seung Hwan Park ◽  
Dong Cheol Oh ◽  
Chul Gyu Jhun ◽  
Seung Oh Han ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Zno Films ◽  
Type Conductivity ◽  
Donor Type ◽  
P Type

We report on the p-type conductivity control using N and Te codoping and thermal annealing in the ZnO films, heteroepitaxially grown on Al2O3 substrates and homoepitaxially grown on ZnO substrates by molecular-beam epitaxy, respectively. The N and Te codoping and the homoepitaxy effectively reduce the background electron concentration in ZnO films due to the suppression of various defect generation, and the thermal annealing causes the conductivity conversion from n-type to p-type due to the activation of N-related defects and the annihilation of donor-type defects. The p-type conductivity with a hole concentration of 1.61016 cm-3 and a hole mobility of 16 cm2/Vsec is obtained in the ZnO:N+T film grown on the Al2O3 substrate and the p-type conductivity with a hole concentration of 4.01016 cm-3 and a hole mobility of 11 cm2/Vsec is obtained in the ZnO:N+Te film grown on the ZnO substrate.

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