Low-Cost High-Performance Zinc Antimonide Thin Films for Thermoelectric Applications

2012 ◽  
Vol 24 (13) ◽  
pp. 1693-1696 ◽  
Author(s):  
Ye Sun ◽  
Mogens Christensen ◽  
Simon Johnsen ◽  
Ngo V. Nong ◽  
Yi Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Low Cost ◽  
Zinc Antimonide

scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

High-performance zinc antimonide thermoelectric thin films achieved by a layer-by-layer combination reaction approach

2020 ◽  
Vol 31 (19) ◽  
pp. 16968-16974
Author(s):  
Zhuang-hao Zheng ◽  
Dong Yang ◽  
Xiao-lan Huang ◽  
Fu Li ◽  
Yue-Xing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Layer By Layer ◽  
Zinc Antimonide ◽  
Thermoelectric Thin Films

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Synthesis of high-performance electrochromic thin films by a low-cost method

2020 ◽  
Author(s):  
Yangbiao Liu ◽  
Jixi Wang ◽  
Xiudi Xiao ◽  
Xuesong Cai ◽  
Guizhang Sheng ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Low Cost

Recent Advances in Pyroelectric Ceramics and Thin Films for Applications in Uncooled Infra-Red Sensor Arrays

2006 ◽  
Vol 45 ◽  
pp. 2503-2513 ◽  
Author(s):  
Roger W. Whatmore
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Spatial Information ◽  
Low Cost ◽  
Sensor Arrays ◽  
Production Costs ◽  
Healthcare Applications ◽  
Infra Red ◽  
And Performance ◽  
Materials Used

Pyroelectric infra-red detector arrays provide an attractive solution to the problem of collecting spatial information on the IR distribution in a scene. They have the property that they are only sensitive to changes in the IR flux. This means that they are particularly-well suited to the monitoring of movements of people in applications such as retail outlets and in safety and healthcare applications. The applications of low cost arrays with limited (few hundred elements) for people sensing and imaging radiometry will be illustrated. The performances and costs of uncooled pyroelectric arrays are ultimately driven by the materials used. For this reason, continuous improvements in materials technology are important. In the area of bulk ceramics, it is possible to obtain significant improvements in both production costs and performance though the use of tape-cast, functionally-gradient materials. The use of directly-deposited ferroelectric thin films on silicon ASIC’s is offering considerable potential for low cost high performance pyroelectric arrays. The challenges involved in developing such materials will be discussed.

scholarly journals The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.

2021 ◽  
Vol 2053 (1) ◽  
pp. 012008
Author(s):  
G M Albalawneh ◽  
M M Ramli ◽  
M ZM Zain ◽  
Z Sauli
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
High Performance ◽  
Low Cost ◽  
Precursor Solution ◽  
Precursor Film ◽  
Fine Grained ◽  
Thin Film Fabrication ◽  
The Impact

Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

scholarly journals Ecofriendly Water-Based Solution Processing: Preliminary Studies of Zn-ZrO2 Thin Films for Microelectronics Applications

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 901
Author(s):  
Aneeqa Bashir ◽  
Hina Siddiqui ◽  
Shahzad Naseem ◽  
Arshad Saleem Bhatti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
High Performance ◽  
Low Cost ◽  
High Yield ◽  
Structural Quality ◽  
Solution Processing ◽  
Performance Targets ◽  
Glass Substrates ◽  
Water Based

This paper demonstrates the high yield and cost effectiveness of a simple and ecofriendly water-based solution processing, to produce Zinc-doped Zirconia (Zn-ZrO2) composite thin films, onto glass substrates, with excellent optical properties that make them of great interest for optical and microelectronics technologies. The effect of Zn variation (given as 10, 15, 20 at.%) on the crystallization, microstructure, and optical properties of ZrO2 film was examined. The addition of Zn did not restructure the ZrO2 lattice, as the results indicated by X-ray diffraction (XRD) and Raman spectroscopy revealed neither any mixed or individual phases; rather, all the films retained the amorphousness. Nonetheless, Zn did control the grain formation at the film surfaces, thereby changing the surface morphology. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) evidenced homogeneous, compact, crack-free, and dense films with surface roughness below 2 nm indicating smooth surfaces. The films were highly transparent (>80%) with tunable optical band gap Eg (5.21 to 4.66 eV) influenced by Zn dopant. Optical constants such as refractive index (n), extinction coefficient (k), and dielectric constant (ε) were obtained from spectroscopic ellipsometry (SE), and a correlation was established with respect to the doping level. A high value of n > 2 value indicated high packing density in these films, and it decreased slightly from 2.98 to 2.60 (at 632 nm); whereas, optical losses were brought down with increasing Zn indicated by decreasing k values. The photoluminescence (PL) spectra showed UV emissions more pronounced than the blue emissions indicating good structural quality of all the films. Nonetheless, added defects from Zn had suppressed the PL emission. The technique presented in this work, thus, manifests as high performance and robust and has the potential comparable to the sophisticated counter techniques. Furthermore, the Zn-ZrO2 films are promising for a low-cost solution to processed microelectronics and optical technologies after reaching high performance targets with regards to the electrical properties.

Effects of Diiodo-Alkane Additives to P3HT Thin Films for High Performance Electronic Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 489-495
Author(s):  
Shelita R. Hall ◽  
Harold O. Lee ◽  
Sam-Shajing Sun
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
High Performance ◽  
Low Cost ◽  
Halogen Bonding ◽  
Morphological Properties ◽  
Organic Thin Film ◽  
Vis Spectroscopy ◽  
A New Technique ◽  
Drying Properties

ABSTRACTPolymeric conjugated materials are very promising for developing future soft material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent advantages such as lightweight, flexible shape, low-cost, ease of processability, ease of scalability, etc. There are a number of ways to tune material properties via post-processing treatments such as annealing, solvent additives, or doping. One challenge of solution processed organic thin film electronics is the repeatable and well-defined morphological control of the resulting films after deposition. In this study, we observed how the addition of diiodo-alkanes to poly-3-hexyl-thiophene (P3HT) solutions effect the formation of resulting thin films. These additives have various boiling points that will affect the drying properties of cast thin films. We also sought to observe if any halogen bonding interaction between iodine and sulfur occurs and if this interaction can be used to promote polymer morphological self-assembly. Techniques such as UV/Vis spectroscopy, X-ray diffraction, and Atomic Force Microscopy were used to probe the evolution of the film morphology as the additives were added to the solutions. 1,8-diiodooctane doped films showed the best overall device performance. This could be due to its favorable interaction with the side chain of P3HT as seen in it morphological properties. This study may result in a new technique that can be used to enhance the solid-state morphology of thin films for high performance electronic applications.

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