scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Densification process and mechanism of solution-processed amorphous indium zinc oxide thin films for high-performance thin film transistors

2019 ◽  
Vol 12 (7) ◽  
pp. 071004 ◽  
Author(s):  
Jong-Baek Seon ◽  
Yong Hyun Cho ◽  
Won Hyung Lee ◽  
Jun-Hee Lee ◽  
Youn Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Densification Process ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Indium Zinc Oxide

BATH PARAMETER DEPENDENCE OF CHEMICALLY-DEPOSITED COPPER SELENIDE THIN FILM

2004 ◽  
Vol 18 (22) ◽  
pp. 3063-3069 ◽  
Author(s):  
AL-MAMUN ◽  
A. B. M. O. ISLAM
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Chemical Bath Deposition ◽  
Glass Substrate ◽  
Deposition Time ◽  
Low Cost ◽  
Copper Selenide ◽  
Reaction Bath ◽  
Selenide Thin Film

In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu 2-x Se thin films on to glass substrate. Different thin films (0.2–0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu 2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se .

scholarly journals The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.

2021 ◽  
Vol 2053 (1) ◽  
pp. 012008
Author(s):  
G M Albalawneh ◽  
M M Ramli ◽  
M ZM Zain ◽  
Z Sauli
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
High Performance ◽  
Low Cost ◽  
Precursor Solution ◽  
Precursor Film ◽  
Fine Grained ◽  
Thin Film Fabrication ◽  
The Impact

Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

Copper Indium Diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation

2011 ◽  
Vol 1324 ◽  
Author(s):  
R. Ernesto Ornelas A ◽  
Sadasivan Shaji ◽  
Omar Arato ◽  
David Avellaneda ◽  
Alan Castillo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Low Cost ◽  
Secondary Phase ◽  
Copper Selenide ◽  
Copper Indium Diselenide ◽  
Visible Absorption ◽  
Copper Indium

ABSTRACTCopper indium diselenide (CIS) based solar cells are one among the promising thin film solar cells. Most of the processes reported for the preparation of CIS directly or indirectly involve Se vapor or H2Se gases which are extremely toxic to health and environment. In this work, we report the preparation of CIS thin films by stacked layers of Glass/In/Se/Cu2Se and Glass/In/Se/Cu2Se/Se. For this, first indium (In) thin film was thermally evaporated on glass substrate on which selenium (Se) and copper selenide (Cu2Se) thin films were deposited sequentially by chemical bath deposition. Selenium thin films were grown from an aqueous solution containing Na2SeSO3 and CH3COOH at room temperature, triple deposition for 7, 7 and 10 min from consecutive baths. Copper selenide thin films were deposited at 35 °C for 1 hour from an aqueous bath containing CuSO4, Na2SeSO3 and NH4OH. Analysis of the X-ray diffraction patterns of the thin films formed at 400 °C from the precursor layer containing extra selenium layer showed the presence of chalcopyrite CuInSe2, without any secondary phase. Morphology of all the samples was analyzed using Scanning Electron Microscopy. Optical band gap was evaluated from the UV-Visible absorption spectra of these films and the values were 1.1 eV and 1 eV respectively for CIS thin films formed at 400 °C from the selenium deficient and selenium rich precursor layers. Electrical characterizations were done using photocurrent measurements. Thus preparation of a CuInSe2 absorber material by a non-toxic selenization process may open up a low cost technique for the fabrication of CIS based solar cells.

scholarly journals Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 965
Author(s):  
Yanwei Li ◽  
Chun Zhao ◽  
Deliang Zhu ◽  
Peijiang Cao ◽  
Shun Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Recent Advances ◽  
Oxide Tfts

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

scholarly journals Influence of Different Solvents on the Formation of Uniform Titanium Dioxide (TiO2) Thin Film by Sol-Gel

2015 ◽  
Vol 773-774 ◽  
pp. 667-671
Author(s):  
Mohd Zainizan Sahdan ◽  
Mohamad Syafiq Alias ◽  
Jais Lias ◽  
Mohd Firdaus Abdul Malek ◽  
Nayan Nafarizal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
High Performance ◽  
Low Cost ◽  
Sol Gel ◽  
Ultra Violet ◽  
Atomic Force ◽  
Current Voltage ◽  
Gel Technique

Uniform Titanium dioxide (TiO2) thin film is essential for application in high performance solar cells. A low cost approach using TiO2nanopowder extracted from tin mining waste to deposit TiO2thin films is demonstrated in this paper. Furthermore, the influence of different solvents (ethanol, acetone, isopropanol and ethylene glycol) on the formation of uniform TiO2thin films in sol-gel technique is studied. The films were characterized by an atomic force microscope (AFM), ultra violet – visible spectrometer (UV-Vis) and a current-voltage (I-V) measurement system. The correlations of the structural, optical and electrical behavior to the type of solvent used were discussed in details.

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

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