scholarly journals In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

2019 ◽  
Vol 31 (33) ◽  
pp. 1902493 ◽  
Author(s):  
Eva Sediva ◽  
Thomas Defferriere ◽  
Nicola H. Perry ◽  
Harry L. Tuller ◽  
Jennifer L. M. Rupp
Keyword(s):  
Thin Films ◽  
Oxygen Nonstoichiometry ◽  
Chemical Expansion ◽  
In Situ Method ◽  
Vibrational Characteristics

In Situ Method for Measuring the Mechanical Properties of Nafion Thin Films during Hydration Cycles

2015 ◽  
Vol 7 (32) ◽  
pp. 17874-17883 ◽  
Author(s):  
Kirt A. Page ◽  
Jae Wook Shin ◽  
Scott A. Eastman ◽  
Brandon W. Rowe ◽  
Sangcheol Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
In Situ Method

scholarly journals An in situ method for characterizing the kinetics of the oxidation process of copper thin films via sheet resistance

2007 ◽  
Vol 56 (11) ◽  
pp. 6722
Author(s):  
Luo Yu-Feng ◽  
Zhong Cheng ◽  
Zhang Li ◽  
Yan Xue-Jian ◽  
Li Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Oxidation Process ◽  
In Situ Method ◽  
Kinetics Of

Potential Driven Chemical Expansion of La0.6Sr0.4Co1-xFexO3-δ Thin Films on Yttria Stabilized Zirconia

2013 ◽  
Vol 1494 ◽  
pp. 259-264
Author(s):  
Kee-Chul Chang ◽  
Brian J. Ingram ◽  
E. Mitchell Hopper ◽  
Miaolei Yan ◽  
Paul Salvador ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacancy Concentration ◽  
Lattice Parameter ◽  
Oxygen Vacancy Concentration ◽  
Applied Potential ◽  
X Ray Diffraction ◽  
Chemical Expansion ◽  
Bulk Data ◽  
Bulk Chemical

ABSTRACTTo better understand the response of oxygen vacancy concentration to applied potential, the lattice parameter of pulsed laser deposited La0.6Sr0.4Co1-xFexO3-δ thin films was monitored using in situ X-ray diffraction. We demonstrate that the chemical expansion under applied potential depends on the cathode morphology, which determines the contribution of different reaction pathways. We investigated applied potential dependent lattice expansion on La0.6Sr0.4Co1-xFexO3-δ with 3 different Co:Fe ratios in an attempt to connect bulk chemical expansion data to thin films. We find that the chemical expansion trends in thin films are different than expected from bulk data.

Novel in situ method based on diffusive gradients in thin-films with lanthanum oxide nanoparticles for measuring As, Sb, and V and in waters

2020 ◽  
Vol 383 ◽  
pp. 121196
Author(s):  
Kexin Li ◽  
Zhaodong Liu ◽  
Xinyao Shi ◽  
Tian-jiao Wei ◽  
Lena Q. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Lanthanum Oxide ◽  
Oxide Nanoparticles ◽  
In Situ Method ◽  
Diffusive Gradients

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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