Li/Garnet Interface Stabilization by Thermal‐Decomposition Vapor Deposition of an Amorphous Carbon Layer

2020 ◽  
Vol 132 (13) ◽  
pp. 5384-5387
Author(s):  
Wuliang Feng ◽  
Xiaoli Dong ◽  
Xiang Zhang ◽  
Zhengzhe Lai ◽  
Panlong Li ◽  
...  
2020 ◽  
Vol 59 (13) ◽  
pp. 5346-5349 ◽  
Author(s):  
Wuliang Feng ◽  
Xiaoli Dong ◽  
Xiang Zhang ◽  
Zhengzhe Lai ◽  
Panlong Li ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36104-36107 ◽  
Author(s):  
Lei Wang ◽  
Boyang Ruan ◽  
Jiantie Xu ◽  
Hua Kun Liu ◽  
Jianmin Ma

The high-capacity of Nb2O5 nanosheets has been successfully realized through introducing amorphous carbon layers, which have been demonstrated to have a large capacity owing to the existence of defects on amorphous carbon layers.


2018 ◽  
Vol 663 ◽  
pp. 21-24 ◽  
Author(s):  
Se Jun Park ◽  
Dohyung Kim ◽  
Seungmoo Lee ◽  
Yongjoon Ha ◽  
Mingyoo Lim ◽  
...  

1995 ◽  
Vol 10 (12) ◽  
pp. 3041-3049 ◽  
Author(s):  
C.J. Chen ◽  
L. Chang ◽  
T.S. Lin ◽  
F.R. Chen

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.


1992 ◽  
Vol 270 ◽  
Author(s):  
Li Chang

ABSTRACTDiamond films prepared by microwave plasma chemical vapor deposition, using a gas mixture of methane and hydrogen with ethanol, were formed on silicon substrates. Highresolution transmission electron microscopy was employed to characterize the microstructure at interface regions. It was found that the diamond crystals were grown on an amorphous carbon layer. Twins and stacking faults were observed at the regions interfaced with the amorphous carbon layer, suggesting that the defects may already exist in the nucleation stage and at the very first stage of growth. Also, some diamond nuclei embedded in the amorphous layer were observed.


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