Laser-Assisted Atomic Layer Deposition of Boron Nitride Thin Films

2005 ◽  
Vol 11 (6-7) ◽  
pp. 330-337 ◽  
Author(s):  
J. Olander ◽  
L. M. Ottosson ◽  
P. Heszler ◽  
J.-O. Carlsson ◽  
K. M. E. Larsson
2014 ◽  
Vol 571 ◽  
pp. 51-55 ◽  
Author(s):  
Michael Snure ◽  
Qing Paduano ◽  
Merle Hamilton ◽  
Jodie Shoaf ◽  
J. Matthew Mann

CrystEngComm ◽  
2017 ◽  
Vol 19 (41) ◽  
pp. 6089-6094 ◽  
Author(s):  
Matthieu Weber ◽  
Emerson Coy ◽  
Igor Iatsunskyi ◽  
Luis Yate ◽  
Philippe Miele ◽  
...  

Unravelling the relation between heat treatments and resulting mechanical properties of boron nitride thin films prepared by ALD.


2018 ◽  
Vol 122 (17) ◽  
pp. 9455-9464 ◽  
Author(s):  
Jaclyn K. Sprenger ◽  
Huaxing Sun ◽  
Andrew S. Cavanagh ◽  
Alexana Roshko ◽  
Paul T. Blanchard ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.


Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...


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