GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices

2007 ◽  
Vol 4 (5) ◽  
pp. 1719-1722 ◽  
Author(s):  
Masatoshi Arai ◽  
Koichi Sugimoto ◽  
Shinichi Egawa ◽  
Taichi Baba ◽  
Tohru Honda
2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki

2014 ◽  
Vol 2014 (1) ◽  
pp. 000258-000261 ◽  
Author(s):  
Yue Shao ◽  
Yu-chou Shih ◽  
Frank G. Shi

As the development of light emitting devices (LEDs), integrate circuits (ICs) and concentration photovoltaic (CPV) modules towards higher density, packaging materials are facing the challenges of withstand with heat generation and high energy. Epoxy molding compound (EMC) is the latest technology for LED and solar cell package to replace PPA and PCT. However, it is well known that the thermal and radiation resistance of epoxy is limited. Recently, silicone based composites are attracting attention as ideal materials because they are insensible to high energy density and good resistance to UV light and heat. Epoxy and silicone both have reliability issues during long-term service at high temperature and high energy. Thermal and radiation degradation of reflector materials will largely affect their reflectance and their contribution to a higher light output and energy efficiency. Therefore, it is very essential to evaluate reliability performance of SMC and EMC based reflecting materials. Aging under multiple environmental conditions has generated considerable interest for evaluating the life and behavior of materials in a real environment. Radiation and thermal aging are two quite different types of aging. The combination of these two situations will cause the aging process to accelerate further. The objective of this study is to investigate the synergetic influence of thermal and radiation aging on optical performance of SMC and EMC based packaging materials. It is concluded that SMC is the preferred choice for packaging LEDs, ICs and solar cells for its superior thermal and radiation resistance.


2018 ◽  
Vol 8 (12) ◽  
pp. 2362 ◽  
Author(s):  
Sergey Nikishin

III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.


2016 ◽  
Vol 18 (7) ◽  
pp. 5614-5621 ◽  
Author(s):  
Bin Wu ◽  
Shi-Wei Zhuang ◽  
Chen Chi ◽  
Zhi-Feng Shi ◽  
Jun-Yan Jiang ◽  
...  

ZnO growth on stainless steel has been realized. Light emitting devices based on the ZnO nanorods emit pure UV light.


2008 ◽  
Vol 590 ◽  
pp. 175-210 ◽  
Author(s):  
Hiroshi Amano ◽  
Masataka Imura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.


2008 ◽  
Vol 590 ◽  
pp. 141-174 ◽  
Author(s):  
Asif Khan ◽  
Krishnan Balakrishnan

Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of deep-UV light-emitting devices with emission from 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed for the shorter wavelength devices, these materials border between having material properties like conventional semiconductors and insulators, adding a degree of complexity to developing efficient light emitting devices. This chapter provides a review of III-nitride based UV light emitting devices including technical developments that allow for emission in the ultraviolet spectrum, and an overview of their applications in optoelectronic systems.


2019 ◽  
Vol 11 (31) ◽  
pp. 27989-27996 ◽  
Author(s):  
Norah Alwadai ◽  
Idris A. Ajia ◽  
Bilal Janjua ◽  
Tahani H. Flemban ◽  
Somak Mitra ◽  
...  

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document