Reliability potential of silicone molding compounds for LED application

2014 ◽  
Vol 2014 (1) ◽  
pp. 000258-000261 ◽  
Author(s):  
Yue Shao ◽  
Yu-chou Shih ◽  
Frank G. Shi

As the development of light emitting devices (LEDs), integrate circuits (ICs) and concentration photovoltaic (CPV) modules towards higher density, packaging materials are facing the challenges of withstand with heat generation and high energy. Epoxy molding compound (EMC) is the latest technology for LED and solar cell package to replace PPA and PCT. However, it is well known that the thermal and radiation resistance of epoxy is limited. Recently, silicone based composites are attracting attention as ideal materials because they are insensible to high energy density and good resistance to UV light and heat. Epoxy and silicone both have reliability issues during long-term service at high temperature and high energy. Thermal and radiation degradation of reflector materials will largely affect their reflectance and their contribution to a higher light output and energy efficiency. Therefore, it is very essential to evaluate reliability performance of SMC and EMC based reflecting materials. Aging under multiple environmental conditions has generated considerable interest for evaluating the life and behavior of materials in a real environment. Radiation and thermal aging are two quite different types of aging. The combination of these two situations will cause the aging process to accelerate further. The objective of this study is to investigate the synergetic influence of thermal and radiation aging on optical performance of SMC and EMC based packaging materials. It is concluded that SMC is the preferred choice for packaging LEDs, ICs and solar cells for its superior thermal and radiation resistance.

2004 ◽  
Vol 846 ◽  
Author(s):  
Chris S. K. Mak ◽  
Scott E. Watkins ◽  
Charlotte K. Williams ◽  
Nicholas R. Evans ◽  
Khai Leok Chan ◽  
...  

ABSTRACTThis paper describes two aspects of research aimed at harnessing the triplet energy generated in electron-hole recombination in polymer electroluminescent devices. The purpose is to design solution-processible phosphorescent organometallic triplet emitters and to design high triplet energy polymer hosts that can transfer triplet energy to the phosphorescent guests. The method employed Suzuki cross coupling reactions to incorporate either phosphorescent cores or high energy triplet monomers covalently into polymer hosts to evaluate their optoelectronic properties. The results showed (i) efficient energy transfer from polyfluorene hosts to red phosphorescent guests and (ii) that pyridine and carbazole monomers could raise triplet energies of hosts. It is concluded that these approaches offer promise in the design of solution processible electrophosphorescent materials for red and green light emitting devices.


2007 ◽  
Vol 4 (5) ◽  
pp. 1719-1722 ◽  
Author(s):  
Masatoshi Arai ◽  
Koichi Sugimoto ◽  
Shinichi Egawa ◽  
Taichi Baba ◽  
Tohru Honda

2011 ◽  
Vol 1342 ◽  
Author(s):  
Takashi Kita ◽  
Shinya Kitayama ◽  
Tsuguo Ishihara ◽  
Hirokazu Izumi ◽  
Yoshitaka Chigi ◽  
...  

ABSTRACTWe developed ultra-violet field-emission devices using rare-earth nitrides of Al1-xGdxN grown by a reactive radio-frequency magnetron sputtering technique. The Al1-xGdxN phosphor film excited by high-energy electrons shows a resolution limited, narrow intra-orbital luminescence from Gd3+ ions at 318 nm. The devise characteristics depend on injected current and acceleration voltage, which were analyzed by considering multiple excitation process of injected high-energy electrons.


2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki

2011 ◽  
Vol 23 (10) ◽  
pp. 642-644 ◽  
Author(s):  
Bo-Siao Cheng ◽  
Ching-Hsueh Chiu ◽  
Ming-Hua Lo ◽  
Yun-Lin Wu ◽  
Hao-Chung Kuo ◽  
...  

2004 ◽  
Vol 831 ◽  
Author(s):  
Y. Xi ◽  
J.-Q. Xi ◽  
Th. Gessmann ◽  
J. M. Shah ◽  
J. K. Kim ◽  
...  

ABSTRACTThe junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate method (± 3 °C). A theoretical model for the dependence of the diode junction voltage (Vj) on junction temperature (T) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the AlGaN/GaN LED sample mounted with thermal paste on a heat sink.


2011 ◽  
Vol 19 (23) ◽  
pp. 23111 ◽  
Author(s):  
Tae Hoon Seo ◽  
Kang Jea Lee ◽  
Ah Hyun Park ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh ◽  
...  

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