Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

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Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.815 ◽

2006 ◽

Vol 527-529 ◽

pp. 815-818 ◽

Cited By ~ 7

Author(s):

Roberta Nipoti ◽

Fabio Bergamini ◽

Francesco Moscatelli ◽

Antonella Poggi ◽

Mariaconcetta Canino ◽

...

Keyword(s):

Reverse Bias ◽

Annealing Process ◽

Current Analysis ◽

Selective Area ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Implantation Process ◽

Voltage Breakdown ◽

Post Implantation ◽

Diode Current

An n-type 8° off-axis <0001> 4H-SiC epitaxial wafer was processed. The n-type epilayer had doping and thickness of, respectively, ~3 × 1015 cm-3 and ~5 μm. p+/n diodes with not terminated junctions were constructed by a selective area implantation process of 9.2 × 1014 cm-2 Al+ ions at 400°C. The diodes had areas in the range 2×10-4 -1×10-3 cm2. The Al depth profile was 6×1019 cm-3 high and 164 nm thick. The post implantation annealing process was done in a high purity Ar ambient at 1600°C for 30 min. The diode current-voltage characteristics were measured in the temperature range 25-290°C. Statistics of 50-100 measurements per device type were done. The fraction of diodes that could be modeled as abrupt junctions within the frame of the Shockley theory decreased with increasing area value, but was always > 75%. The ideality factor was > 2 only at temperatures > 200°C and bias values < 1 V. The leakage current was extremely weak and remained of the order of 10-9 Acm-2 at 70°C and 500 V reverse bias. 4% of the diodes reached the theoretical voltage breakdown that was 1030 V. The surface roughness of un-implanted and implanted regions after diode processing was, respectively, 2 nm and 12 nm.

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The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

MRS Proceedings ◽

10.1557/proc-262-1115 ◽

1992 ◽

Vol 262 ◽

Author(s):

Anatol I. Ivashchenko ◽

F.Ya. Kopanskaya ◽

A. I. Solomonov ◽

V. P. Tarchenko

Keyword(s):

Ion Implantation ◽

Barrier Height ◽

Current Transport ◽

Rapid Annealing ◽

Forward Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Recombination Centers ◽

Current Voltage Characteristics ◽

Post Implantation

ABSTRACTThe effect of phosphorous ion implantation and/or rapid thermal treatment on the behaviour of Schottky barrier elect-rophysical characteristics formed on the plane (100) of n-GaP epitaxial layer is discussed. Even though the implantation and post implantation rapid annealing lead to the generation of deep recombination centers in the bulk, the dominant mechanism of current transport across the barrier structure becomes thermo-ionic - like in initial samples. The analysis of the behaviour of forward current-voltage characteristics, steady state capacitance-voltage characteristics and DLTS data allow to conclude that the obtained reduction of forward current after ion im- plactation can be attributed to an increase of effective potenia! barrier height.

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Ионный синтез структур кремний на изоляторе" со свинцово-силикатным изолирующим слоем

Письма в журнал технической физики ◽

10.21883/pjtf.2021.14.51188.18773 ◽

2021 ◽

Vol 47 (14) ◽

pp. 47

Author(s):

Э.Ю. Бучин ◽

Ю.И. Денисенко

Keyword(s):

Silicon Layer ◽

Silicon On Insulator ◽

Lead Ions ◽

Silicate Layer ◽

Silicon Substrates ◽

Oxygen Ions ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Post Implantation

The process of ionic synthesis of “silicon-on-insulator” structures based on the sequential implantation of oxygen ions and a glass former into silicon substrates has been investigated. Lead ions were used as a glass former. The features of the formation of a buried silicate layer during post-implantation annealing are considered. The current-voltage characteristics of the synthesized structures, as well as the specific electrical resistances of the insulator and the device silicon layer, have been measured.

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Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.625 ◽

2005 ◽

Vol 483-485 ◽

pp. 625-628 ◽

Cited By ~ 2

Author(s):

Fabio Bergamini ◽

Francesco Moscatelli ◽

Mariaconcetta Canino ◽

Antonella Poggi ◽

Roberta Nipoti

Keyword(s):

Leakage Current ◽

Leakage Current Density ◽

Current Density ◽

Electrical Characterization ◽

Reverse Leakage Current ◽

Current Voltage ◽

Exponential Trend ◽

Current Voltage Characteristics ◽

Post Implantation

We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at –100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at –100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer.

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Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.687 ◽

2009 ◽

Vol 615-617 ◽

pp. 687-690

Author(s):

Francesco Moscatelli ◽

Roberta Nipoti ◽

Antonella Poggi ◽

Sandro Solmi ◽

Stefano Cristiani ◽

...

Keyword(s):

Reverse Bias ◽

Gate Oxide ◽

Oxidation Time ◽

Reverse Bias Voltage ◽

The Third ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Post Implantation ◽

Diode Current

Phosphorous implanted n+/p diodes have been included in the masks for manufacturing n-MOSFET devices and processed in the same way of source/drain regions. The diode junctions were made by a P+ implantation at 300°C and a post implantation annealing at 1300°C. The diode emitter area was protected by 0.6 m thick CVD oxide during the processing of the MOSFET gate oxide. Three gate oxide processes were taken into account: two of them include a N implantation before a wet oxidation, while the third one was a standard oxidation. Considering the effect on the n+/p diodes, the main difference among the processes were the wet thermal oxidation time that ranged between 180 and 480 min at a temperature of 1100°C. The diode current-voltage characteristics show similar forward but different reverse curves in the temperature range of 25-290°C. Differences in reverse bias voltage as a function of the measurement temperature have been analyzed and are related to the different gate oxidation time. A correlation between the shortest oxidation time and the lower leakage current is presented.

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Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics

MRS Advances ◽

10.1557/adv.2016.315 ◽

2016 ◽

Vol 1 (54) ◽

pp. 3637-3642 ◽

Cited By ~ 2

Author(s):

Roberta Nipoti ◽

Giovanna Sozzi ◽

Maurizio Puzzanghera ◽

Roberto Menozzi

Keyword(s):

Temperature Dependence ◽

Thermal Activation ◽

Reverse Current ◽

Activation Energies ◽

Vacancy Defect ◽

Current Component ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Post Implantation

ABSTRACT The temperature dependence of the forward and reverse current voltage characteristics of circular Al+ implanted 4H-SiC p-i-n vertical diodes of various diameters, post implantation annealed at 1950 °C/5 min, have been used to obtain the thermal activation energies of the defects responsible of the generation and the recombination currents, as well as the area and the periphery current component of the current voltage characteristics. The former have values compatible with those of the traps associated to the carbon vacancy defect in 4H-SiC. The hypothesis that only these traps may justify the trend of the current voltage characteristics of the studied diodes has been tested by simulations in a Synopsys Sentaurus TCAD suite.

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